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Title: Method of transferring strained semiconductor structure

The transfer of strained semiconductor layers from one substrate to another substrate involves depositing a multilayer structure on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the deposited multilayer structure is bonded to a second substrate and is separated away at the interface, which results in transferring a multilayer structure from one substrate to the other substrate. The multilayer structure includes at least one strained semiconductor layer and at least one strain-induced seed layer. The strain-induced seed layer can be optionally etched away after the layer transfer.
Authors:
 [1] ;  [2]
  1. Santa Fe, NM
  2. College Station, TX
Publication Date:
OSTI Identifier:
1013558
Report Number(s):
7,638,410
US Patent Application 11/641,471
DOE Contract Number:
AC51-06NA25396
Resource Type:
Patent
Research Org:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE