Design considerations for a radiation hardened nonvolatile memory

Conference · Mon Feb 01 00:00:00 EST 1993

OSTI ID:10130783

Murray, J R

The SA3823 64K EEPROM was developed for both weapon and space applications. The circuit was designed for fabrication in a CMOS/SNOS (Complementary Metal Oxide Semiconductor/Silicon Nitride Oxide Semiconductor) process since this process offers maximum radiation hardness for nonvolatile circuits. [1--6] Specific aspects of the circuit design were influenced by each of the radiation environments of concern. Total dose radiation effects were a factor in the memory cell and sense amplifier designs. Power distribution to the various latches was designed to tolerate the photocurrents generated during a transient radiation pulse. Single event upset (SEU) concerns were accounted for in the design of the latches and the control logic. The SA3823 is a 8K x 8 bit EEPROM which is partitioned into 128 pages with 64 bytes in each page. Data is programmed into the memory one page at a time. Writing data into the memory is a two step process: loading 64 bytes into the data-in latches and then programming the latched data into a page of the memory.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 10130783
• Report Number(s): SAND-93-0144C; CONF-930704-2; ON: DE93007592
• Resource Relation: Conference: NSREC `93: international nuclear and space radiation effects conference,Snowbird, UT (United States),19-23 Jul 1993; Other Information: PBD: [1993]
• Country of Publication: United States
• Language: English

Related Subjects

45 MILITARY TECHNOLOGY, WEAPONRY, AND NATIONAL DEFENSE
42 ENGINEERING
36 MATERIALS SCIENCE
SEMICONDUCTOR STORAGE DEVICES
RADIATION HARDENING
MICROELECTRONIC CIRCUITS
DESIGN
NUCLEAR WEAPONS
SPACE
MICROELECTRONICS
TRANSISTORS
DOSE RATES
SILICON OXIDES
SILICON NITRIDES
450200
426000
360605
NUCLEAR EXPLOSIONS AND EXPLOSIVES
COMPONENTS
ELECTRON DEVICES AND CIRCUITS
RADIATION EFFECTS