Trimethylamine alane for low-pressure MOVPE growth of AlGaAs-based materials and device structures
- Sandia National Labs., Albuquerque, NM (United States)
- Photonics Research, Inc., Broomfield, CO (United States)
The use of trimethylamine alane (TMAA1) as an alternative to trimethylaluminum (TMA1) for low-pressure metalorganic vapor-phase epitaxy (MOVPE) of AlGaAs thin films as well as complex optoelectronic device structures has been studied in detail. AlGaAs layers were grown in a horizontal reaction chamber at 20--110 mbar with growth temperatures in the range 650{degrees}C {le} T{sub G} {le} 750{degrees}C. Wafer thickness uniformity is strongly dependent on growth pressure, and is acceptable only for the highest linear flow velocities. The 12K photoluminescence (PL) spectra of AlGaAs layers grown using TMAA1 and TEGa exhibit uniformly intense and narrow bound-exciton emission throughout the growth temperature range investigated. To assess the viability of this new source for the low-pressure OMVPE growth of advanced optoelectronic devices, several optically-pumped vertical-cavity surface-emitting laser (VCSEL) structures were grown using TMAA1 extensively. Room temperature lasing at 850 nm was reproducibly obtained from the VCSEL structures, with a threshold pumping power comparable to similar structures grown by molecular beam epitaxy in our laboratories.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 10122186
- Report Number(s):
- SAND-91-1563C; CONF-911202-54; ON: DE92007658
- Resource Relation:
- Conference: Annual fall meeting of the Materials Research Society (MRS),Boston, MA (United States),2-6 Dec 1991; Other Information: PBD: [1991]
- Country of Publication:
- United States
- Language:
- English
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