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Title: Semiconductor microcavity lasers

New kinds of semiconductor microcavity lasers are being created by modern semiconductor technologies like molecular beam epitaxy and electron beam lithography. These new microcavities exploit 3-dimensional architectures possible with epitaxial layering and surface patterning. The physical properties of these microcavities are intimately related to the geometry imposed on the semiconductor materials. Among these microcavities are surface-emitting structures which have many useful properties for commercial purposes. This paper reviews the basic physics of these microstructured lasers.
Authors:
; ; ; ; ;
Publication Date:
OSTI Identifier:
10121204
Report Number(s):
SAND--94-0147C; CONF-940114--2
ON: DE94006143; BR: GB0103012; TRN: AHC29404%%54
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: International symposium on optoelectronic and microwave engineering,Los Angeles, CA (United States),22-28 Jan 1994; Other Information: PBD: [1994]
Research Org:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Org:
USDOE, Washington, DC (United States)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; SEMICONDUCTOR LASERS; DESIGN; FABRICATION; LASER CAVITIES; MICROSTRUCTURE; TECHNOLOGY ASSESSMENT; TEMPERATURE DEPENDENCE; HETEROJUNCTIONS 426002; LASERS AND MASERS