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Title: Electro-optic materials by solid source MOCVD

Conference ·
OSTI ID:10113997
; ;  [1]; ;  [2];  [3];  [4];  [5]
  1. Hewlett-Packard Co., Palo Alto, CA (United States)
  2. Stanford Univ., CA (United States). Dept. of Materials Science and Engineering
  3. Stanford Univ., CA (United States). Center for Materials Research
  4. Xerox Palo Alto Research Center, CA (United States)
  5. Argonne National Lab., IL (United States)

The solid source MOCVD technique, employing a single powder vaporization source composed of mixed beta-diketonate metalorganic compounds, has been used to grow thin films of a variety of electro-optic materials, including lithium niobate, strontium barium niobate, and potassium niobate. Preliminary results for potassium niobate films indicate that a volatile potassium organometallic source can be synthesized useful for growing potassium niobate by MOCVD. High single phase (001) oriented strontium barium niobate films have been deposited which exhibit waveguiding behavior. The most extensive work has been done on lithium niobate deposited epitaxially on a variety of substrates. Oriented z-axis (001) films have been grown on c-axis sapphire with and without a (111) oriented platinum base electrode and on a bulk grown lithium niobate substrate. Films grown directly on c-axis sapphire at 700 C exhibit x-ray rocking curve linewidths as low as .044 degrees, nearly perfect in-plane orientation as determined by x-ray phi scans, and peak-to-peak surface roughness less than 40 {Angstrom}. Optical waveguiding has been demonstrated by single prism coupling technique on similar films 1175--2000 {Angstrom} thick grown at 500 C, with optical losses of approximately 2 db/cm at 632.8 nm measured over 3.5 cm long films. Polarization vs. electric field measurements on 1100 {Angstrom} thick films grown on platinum show a hysteresis loop indicating ferroelectric behavior.

Research Organization:
Argonne National Lab., IL (United States)
Sponsoring Organization:
USDOE, Washington, DC (United States)
DOE Contract Number:
W-31109-ENG-38
OSTI ID:
10113997
Report Number(s):
ANL/MSD/CP-81580; CONF-931108-36; ON: DE94005120
Resource Relation:
Conference: Fall meeting of the Materials Research Society (MRS),Boston, MA (United States),29 Nov - 3 Dec 1993; Other Information: PBD: Dec 1993
Country of Publication:
United States
Language:
English