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Title: High Rate Deposition of High Quality ZnO:Al by Filtered Cathodic Arc

High quality ZnO:Al (AZO) thin films were prepared on glass substrates by direct current filtered cathodic arc deposition. Substrate temperature was varied from room temperature to 425oC, and samples were grown with and without the assistance of low power oxygen plasma (75W). For each growth condition, at least 3 samples were grown to give a statistical look at the effect of the growth environment on the film properties and to explore the reproducibility of the technique. Growth rate was in the 100-400 nm/min range but was apparently random and could not be easily traced to the growth conditions explored. For optimized growth conditions, 300-600 nm AZO films had resistivities of 3-6 x 10-4 ?Omega cm, carrier concentrations in the range of 2-4 x 1020 cm3, Hall mobility as high as 55 cm2/Vs, and optical transmittance greater than 90percent. These films are also highly oriented with the c-axis perpendicular to the substrate and a surface roughness of 2-4 nm.
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Publication Date:
OSTI Identifier:
Report Number(s):
TRN: US201106%%275
DOE Contract Number:
Resource Type:
Resource Relation:
Conference: Fall Meeting of the Materials Research Society (MRS), Boston, MA, November 29-December 3, 2010
Research Org:
Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
Sponsoring Org:
Accelerator& Fusion Research Division; Environmental Energy Technologies Division; Materials Sciences Division
Country of Publication:
United States
36; DEPOSITION; DIRECT CURRENT; GLASS; OXYGEN; PLASMA; ROUGHNESS; SUBSTRATES; THIN FILMS zinc oxide, transparent conducting oxide, cathodic arc