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Title: TJ Solar Cell

Abstract

This talk will discuss recent developments in III-V multijunction photovoltaic technology which have led to the highest-efficiency solar cells ever demonstrated. The relationship between the materials science of III-V semiconductors and the achievement of record solar cell efficiencies will be emphasized. For instance, epitaxially-grown GAInP has been found to form a spontaneously-ordered GaP/InP (111) superlattice. This ordering affects the band gap of the material, which in turn affects the design of solar cells which incorporate GaInP. For the next generation of ultrahigh-efficiency III-V solar cells, we need a new semiconductor which is lattice-matched to GaAs, has a band gap of 1 eV, and has long minority-carrier diffusion lengths. Out of a number of candidate materials, the recently-discovered alloy GaInNAs appears to have the greatest promise. This material satisfies the first two criteria, but has to date shown very low diffusion lengths, a problem which is our current focus in the development of these next-generation cells.

Authors:
Publication Date:
Research Org.:
FNAL (Fermi National Accelerator Laboratory (FNAL), Batavia, IL (United States))
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
987342
DOE Contract Number:
AC02-07CH11359
Resource Type:
Multimedia
Resource Relation:
Conference: Fermilab Colloquia, Fermi National Accelerator Laboratory (FNAL), Batvia, Illinois (United States), presented on April 17, 2002
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 43 PARTICLE ACCELERATORS; PHOTOVOLTAIC TECHNOLOGY; SOLAR CELLS; SEMICONDUCTORS

Citation Formats

Friedman, Daniel. TJ Solar Cell. United States: N. p., 2009. Web.
Friedman, Daniel. TJ Solar Cell. United States.
Friedman, Daniel. Fri . "TJ Solar Cell". United States. https://www.osti.gov/servlets/purl/987342.
@article{osti_987342,
title = {TJ Solar Cell},
author = {Friedman, Daniel},
abstractNote = {This talk will discuss recent developments in III-V multijunction photovoltaic technology which have led to the highest-efficiency solar cells ever demonstrated. The relationship between the materials science of III-V semiconductors and the achievement of record solar cell efficiencies will be emphasized. For instance, epitaxially-grown GAInP has been found to form a spontaneously-ordered GaP/InP (111) superlattice. This ordering affects the band gap of the material, which in turn affects the design of solar cells which incorporate GaInP. For the next generation of ultrahigh-efficiency III-V solar cells, we need a new semiconductor which is lattice-matched to GaAs, has a band gap of 1 eV, and has long minority-carrier diffusion lengths. Out of a number of candidate materials, the recently-discovered alloy GaInNAs appears to have the greatest promise. This material satisfies the first two criteria, but has to date shown very low diffusion lengths, a problem which is our current focus in the development of these next-generation cells.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2009},
month = {4}
}

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