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- Multimedia: R&D100: 6.5kV Enhancement-Mode Silicon Carbide JFET Switch
Title: R&D100: 6.5kV Enhancement-Mode Silicon Carbide JFET Switch
Researchers at Sandia National Laboratories have partnered with United Silicon Carbide, Inc. to combine advanced materials with novel manufacturing ideas to build a new product for significantly more more »efficient power conversion. Harnessing the unique features of silicon carbide, this first of its kind device allows higher voltage switching, and reductions in switching losses to significantly boost the efficiency and reliability of power generation and power conversion.« less
| Title: | R&D100: 6.5kV Enhancement-Mode Silicon Carbide JFET Switch |
| Authors: | Dries, Chris Hostetler, John Atcitty, Stan |
| Publication Date: | 2015-11-19 |
| OSTI Identifier: | 1328738 |
| Resource Type: | Multimedia |
| Research Org: | Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States) |
| Sponsoring Org: | USDOE National Nuclear Security Administration (NNSA) |
| Subject: | 25 ENERGY STORAGE ; 24 POWER TRANSMISSION AND DISTRIBUTION ; SILICON CARBIDE ; POWER CONVERSION ; ELECTRICITY ; TRANSISTOR |
| Country of Publication: | United States |
| Language: | English |
| Run Time: | 00:07:04 |
| System Entry Date: | 2018-06-12 |
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