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Title: Ultra-dense billion year memory chip

Abstract

This video shows an iron nanoparticle shuttle moving through a carbon nanotube in the presence of a low voltage electrical current. The shuttles position inside the tube can function as a high-density nonvolatile memory element. (Courtesy of /Zettl Research Group, Lawrence Berkeley National Laboratory and University of California at Berkeley.)

Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1047468
Resource Type:
Multimedia
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; LBNL; NANOPARTICLE; NANOTUBE; MEMORY CHIP; IRON; NON-VOLATILE MEMORY

Citation Formats

None. Ultra-dense billion year memory chip. United States: N. p., 2009. Web.
None. Ultra-dense billion year memory chip. United States.
None. Thu . "Ultra-dense billion year memory chip". United States. https://www.osti.gov/servlets/purl/1047468.
@article{osti_1047468,
title = {Ultra-dense billion year memory chip},
author = {None},
abstractNote = {This video shows an iron nanoparticle shuttle moving through a carbon nanotube in the presence of a low voltage electrical current. The shuttles position inside the tube can function as a high-density nonvolatile memory element. (Courtesy of /Zettl Research Group, Lawrence Berkeley National Laboratory and University of California at Berkeley.)},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2009},
month = {1}
}

Multimedia:

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