Ultra-dense billion year memory chip
Abstract
This video shows an iron nanoparticle shuttle moving through a carbon nanotube in the presence of a low voltage electrical current. The shuttles position inside the tube can function as a high-density nonvolatile memory element. (Courtesy of /Zettl Research Group, Lawrence Berkeley National Laboratory and University of California at Berkeley.)
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1047468
- Resource Type:
- Multimedia
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY; LBNL; NANOPARTICLE; NANOTUBE; MEMORY CHIP; IRON; NON-VOLATILE MEMORY
Citation Formats
. Ultra-dense billion year memory chip. United States: N. p., 2009.
Web.
. Ultra-dense billion year memory chip. United States.
. Thu .
"Ultra-dense billion year memory chip". United States. https://www.osti.gov/servlets/purl/1047468.
@article{osti_1047468,
title = {Ultra-dense billion year memory chip},
author = {},
abstractNote = {This video shows an iron nanoparticle shuttle moving through a carbon nanotube in the presence of a low voltage electrical current. The shuttles position inside the tube can function as a high-density nonvolatile memory element. (Courtesy of /Zettl Research Group, Lawrence Berkeley National Laboratory and University of California at Berkeley.)},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Jan 01 00:00:00 EST 2009},
month = {Thu Jan 01 00:00:00 EST 2009}
}