Structure-property relationships and mobility optimization in sputtered La-doped BaSn O3 films: Toward 100cm2 V-1s-1

Postiglione, William M.; Ganguly, Koustav; Yun, Hwanhui; Jeong, Jong Seok; Jacobson, Andrew; Borgeson, Lindsey; Jalan, Bharat; Mkhoyan, K. Andre; Leighton, Chris

doi:10.1103/physrevmaterials.5.044604

Title: Structure-property relationships and mobility optimization in sputtered La-doped BaSn O₃ films: Toward 100cm² V^-1s^-1

Abstract

he wide band gap semiconducting perovskite BaSnO₃ is of high current interest due to outstanding room temperature mobility at high electron density, fueled by potential applications in oxide, transparent, and power electronics. Due in part to a lack of lattice-matched substrates, BaSnO₃ thin films suffer from high defect densities, however, limiting electron mobility. Additionally, the vast majority of BaSnO₃ thin film research has focused on pulsed laser deposition or molecular beam epitaxy. In this work, we present an exhaustive optimization of the mobility of Ba_0.98La_0.02SnO₃ films grown by a scalable, high-throughput method: high-pressure-oxygen sputter deposition. Considering target synthesis conditions, substrate selection, buffer layer structure, deposition temperature, deposition rate, thickness, and postdeposition annealing conditions, and by combining high-resolution x-ray diffraction, reciprocal space mapping, rocking curve analysis, scanning transmission electron microscopy, atomic force microscopy, and temperature-dependent electronic transport measurements, detailed understanding of synthesis-structure-property relationships is attained. Optimized room temperature mobility of 96 cm²V^–1s^–1 is achieved in vacuum-annealed GdScO₃(110)/BaSnO₃(120 nm)/Ba_0.98La_0.02SnO₃(200 nm) heterostructures, as well as 92 cm²V^–1s^–1 on unbuffered substrates and 87 ²V^–1s^–1 without postdeposition annealing. These results, including important trends in defect densities and a surprising dependence of mobility on lattice mismatch, substantially expand the understanding of the interplay between deposition conditions,more »« less

Authors:

^[1]; Ganguly, Koustav ^[1];

^[1]; Jeong, Jong Seok ^[1]; Jacobson, Andrew ^[1]; Borgeson, Lindsey ^[1];

^[1];

^[1]

Univ. of Minnesota, Minneapolis, MN (United States)

Publication Date:: Tue Apr 13 00:00:00 EDT 2021

Research Org.:: Univ. of Minnesota, Minneapolis, MN (United States)

Sponsoring Org.:: USDOE Office of Science (SC); National Science Foundation (NSF)

OSTI Identifier:: 1852210

Grant/Contract Number:: SC0016371; DMR-1420013; DMR-2011401

Resource Type:: Accepted Manuscript

Journal Name:: Physical Review Materials

Additional Journal Information:: Journal Volume: 5; Journal Issue: 4; Journal ID: ISSN 2475-9953

Publisher:: American Physical Society (APS)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; materials science; electrical conductivity; electrical properties; heterostructures; semiconductors; thin films; transparent conducting oxides; wide band gap systems; film deposition; physical deposition; transport techniques

Citation Formats


                    Postiglione, William M., Ganguly, Koustav, Yun, Hwanhui, Jeong, Jong Seok, Jacobson, Andrew, Borgeson, Lindsey, Jalan, Bharat, Mkhoyan, K. Andre, and Leighton, Chris. Structure-property relationships and mobility optimization in sputtered La-doped BaSn O3 films: Toward 100cm2 V-1s-1.  United States: N. p., 2021. 
Web.  doi:10.1103/physrevmaterials.5.044604.

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                    Postiglione, William M., Ganguly, Koustav, Yun, Hwanhui, Jeong, Jong Seok, Jacobson, Andrew, Borgeson, Lindsey, Jalan, Bharat, Mkhoyan, K. Andre, & Leighton, Chris. Structure-property relationships and mobility optimization in sputtered La-doped BaSn O3 films: Toward 100cm2 V-1s-1.  United States.  https://doi.org/10.1103/physrevmaterials.5.044604

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                    Postiglione, William M., Ganguly, Koustav, Yun, Hwanhui, Jeong, Jong Seok, Jacobson, Andrew, Borgeson, Lindsey, Jalan, Bharat, Mkhoyan, K. Andre, and Leighton, Chris. Tue .  
"Structure-property relationships and mobility optimization in sputtered La-doped BaSn O3 films: Toward 100cm2 V-1s-1".  United States.  https://doi.org/10.1103/physrevmaterials.5.044604.  https://www.osti.gov/servlets/purl/1852210.

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@article{osti_1852210,

  title        = {Structure-property relationships and mobility optimization in sputtered La-doped BaSn O3 films: Toward 100cm2 V-1s-1},

  author       = {Postiglione, William M. and Ganguly, Koustav and Yun, Hwanhui and Jeong, Jong Seok and Jacobson, Andrew and Borgeson, Lindsey and Jalan, Bharat and Mkhoyan, K. Andre and Leighton, Chris},

  abstractNote = {he wide band gap semiconducting perovskite BaSnO3 is of high current interest due to outstanding room temperature mobility at high electron density, fueled by potential applications in oxide, transparent, and power electronics. Due in part to a lack of lattice-matched substrates, BaSnO3 thin films suffer from high defect densities, however, limiting electron mobility. Additionally, the vast majority of BaSnO3 thin film research has focused on pulsed laser deposition or molecular beam epitaxy. In this work, we present an exhaustive optimization of the mobility of Ba0.98La0.02SnO3 films grown by a scalable, high-throughput method: high-pressure-oxygen sputter deposition. Considering target synthesis conditions, substrate selection, buffer layer structure, deposition temperature, deposition rate, thickness, and postdeposition annealing conditions, and by combining high-resolution x-ray diffraction, reciprocal space mapping, rocking curve analysis, scanning transmission electron microscopy, atomic force microscopy, and temperature-dependent electronic transport measurements, detailed understanding of synthesis-structure-property relationships is attained. Optimized room temperature mobility of 96 cm2V–1s–1 is achieved in vacuum-annealed GdScO3(110)/BaSnO3(120 nm)/Ba0.98La0.02SnO3(200 nm) heterostructures, as well as 92 cm2V–1s–1 on unbuffered substrates and 87 2V–1s–1 without postdeposition annealing. These results, including important trends in defect densities and a surprising dependence of mobility on lattice mismatch, substantially expand the understanding of the interplay between deposition conditions, microstructure, and transport in doped BaSnO3 films, establishing competitive mobilities in films fabricated via a scalable, high-throughput, industry-standard technique.},

  doi          = {10.1103/physrevmaterials.5.044604},

  journal      = {Physical Review Materials},

  number       = 4,

  volume       = 5,

  place        = {United States},

  year         = {Tue Apr 13 00:00:00 EDT 2021},

  month        = {Tue Apr 13 00:00:00 EDT 2021}

}

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Works referenced in this record:

La-doped BaSnO ₃ —Degenerate perovskite transparent conducting oxide: Evidence from synchrotron x-ray spectroscopy
journal, July 2013

Sallis, S.; Scanlon, D. O.; Chae, S. C.
Applied Physics Letters, Vol. 103, Issue 4
DOI: 10.1063/1.4816511

Enhancing electron mobility in La-doped BaSnO ₃ thin films by thermal strain to annihilate extended defects
journal, June 2016

Yu, Sangbae; Yoon, Daseob; Son, Junwoo
Applied Physics Letters, Vol. 108, Issue 26
DOI: 10.1063/1.4954638

Hydrothermal growth of BaSnO3 single crystals for wide bandgap applications
journal, April 2020

Terry, Rylan J.; Combs, Nick; McMillen, Colin D.
Journal of Crystal Growth, Vol. 536
DOI: 10.1016/j.jcrysgro.2020.125529

High carrier mobility in transparent Ba _1−x La _x SnO ₃ crystals with a wide band gap
journal, April 2012

Luo, X.; Oh, Y. S.; Sirenko, A.
Applied Physics Letters, Vol. 100, Issue 17
DOI: 10.1063/1.4709415

Perovskite transparent conducting oxides: an ab initio study
journal, September 2013

Dabaghmanesh, S.; Saniz, R.; Amini, M. N.
Journal of Physics: Condensed Matter, Vol. 25, Issue 41
DOI: 10.1088/0953-8984/25/41/415503

Hybrid molecular beam epitaxy for the growth of stoichiometric BaSnO ₃
journal, November 2015

Prakash, Abhinav; Dewey, John; Yun, Hwanhui
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 33, Issue 6
DOI: 10.1116/1.4933401

Frequency- and temperature-dependent dielectric response in hybrid molecular beam epitaxy-grown BaSnO ₃ films
journal, June 2018

Nunn, William; Prakash, Abhinav; Bhowmik, Arghya
APL Materials, Vol. 6, Issue 6
DOI: 10.1063/1.5027567

Gd-doped BaSnO3: A transparent conducting oxide with localized magnetic moments
journal, January 2016

Alaan, Urusa S.; Shafer, Padraic; N'Diaye, Alpha T.
Applied Physics Letters, Vol. 108, Issue 4
DOI: 10.1063/1.4939686

Giant anisotropic magnetoresistance in oxygen-vacancy-ordered epitaxial ${La}_{0.5} {Sr}_{0.5} Co O_{3 - δ}$ films
journal, September 2020

Walter, Jeff; Bose, Shameek; Cabero, Mariona
Physical Review Materials, Vol. 4, Issue 9
DOI: 10.1103/PhysRevMaterials.4.091401

Effect of chemical and ion‐beam etching on the atomic structure of interfaces in YBa ₂ Cu ₃ O ₇ /PrBa ₂ Cu ₃ O ₇ Josephson junctions
journal, December 1995

Jia, C. L.; Faley, M. I.; Poppe, U.
Applied Physics Letters, Vol. 67, Issue 24
DOI: 10.1063/1.115342

Electrical and Optical Properties of Sb-Doped BaSnO ₃
journal, September 2013

Mizoguchi, Hiroshi; Chen, Ping; Boolchand, Punit
Chemistry of Materials, Vol. 25, Issue 19
DOI: 10.1021/cm4019309

Scattering mechanisms and mobility enhancement in epitaxial BaSnO ₃ thin films probed via electrolyte gating
journal, July 2020

Wang, Helin; Prakash, Abhinav; Reich, Konstantin
APL Materials, Vol. 8, Issue 7
DOI: 10.1063/5.0017227

Large thickness dependence of the carrier mobility in a transparent oxide semiconductor, La-doped BaSnO ₃
journal, June 2018

Sanchela, Anup V.; Wei, Mian; Zensyo, Haruki
Applied Physics Letters, Vol. 112, Issue 23
DOI: 10.1063/1.5033326

Adsorption-controlled growth and the influence of stoichiometry on electronic transport in hybrid molecular beam epitaxy-grown BaSnO ₃ films
journal, January 2017

Prakash, Abhinav; Xu, Peng; Wu, Xuewang
Journal of Materials Chemistry C, Vol. 5, Issue 23
DOI: 10.1039/C7TC00190H

Transparent Perovskite Barium Stannate with High Electron Mobility and Thermal Stability
journal, July 2017

Lee, Woong-Jhae; Kim, Hyung Joon; Kang, Jeonghun
Annual Review of Materials Research, Vol. 47, Issue 1
DOI: 10.1146/annurev-matsci-070616-124109

Colloidally prepared La-doped BaSnO ₃ electrodes for efficient, photostable perovskite solar cells
journal, March 2017

Shin, Seong Sik; Yeom, Eun Joo; Yang, Woon Seok
Science, Vol. 356, Issue 6334
DOI: 10.1126/science.aam6620

Mobility-electron density relation probed via controlled oxygen vacancy doping in epitaxial BaSnO ₃
journal, May 2017

Ganguly, Koustav; Prakash, Abhinav; Jalan, Bharat
APL Materials, Vol. 5, Issue 5
DOI: 10.1063/1.4983039

Improved electrical mobility in highly epitaxial La:BaSnO ₃ films on SmScO ₃ (110) substrates
journal, August 2014

Wadekar, P. V.; Alaria, J.; O'Sullivan, M.
Applied Physics Letters, Vol. 105, Issue 5
DOI: 10.1063/1.4891816

BaSnO ₃ as a channel material in perovskite oxide heterostructures
journal, February 2016

Krishnaswamy, Karthik; Bjaalie, Lars; Himmetoglu, Burak
Applied Physics Letters, Vol. 108, Issue 8
DOI: 10.1063/1.4942366

Structural, electrical, and luminescence characteristics of vacuum-annealed epitaxial (Ba,La)SnO3 thin films
journal, June 2015

Anoop, G.; Park, Eun Young; Lee, Sungsu
Electronic Materials Letters, Vol. 11, Issue 4
DOI: 10.1007/s13391-015-4436-z

Atomic mapping of Ruddlesden-Popper faults in transparent conducting BaSnO3-based thin films
journal, November 2015

Wang, W. Y.; Tang, Y. L.; Zhu, Y. L.
Scientific Reports, Vol. 5, Issue 1
DOI: 10.1038/srep16097

Single crystal growth and characterization of Ba2ScNbO6 – A novel substrate for BaSnO3 films
journal, December 2019

Guguschev, C.; Klimm, D.; Brützam, M.
Journal of Crystal Growth, Vol. 528
DOI: 10.1016/j.jcrysgro.2019.125263

Low‐resistivity epitaxial YBa ₂ Cu ₃ O ₇ thin films with improved microstructure and reduced microwave losses
journal, June 1992

Poppe, U.; Klein, N.; Dähne, U.
Journal of Applied Physics, Vol. 71, Issue 11
DOI: 10.1063/1.350535

Origins of $n$ -type doping difficulties in perovskite stannates
journal, February 2018

Weston, L.; Bjaalie, L.; Krishnaswamy, K.
Physical Review B, Vol. 97, Issue 5
DOI: 10.1103/PhysRevB.97.054112

Magnetism and transport in transparent high-mobility ${BaSnO}_{3}$ films doped with La, Pr, Nd, and Gd
journal, December 2019

Alaan, Urusa S.; Wong, Franklin J.; Ditto, Jeffrey J.
Physical Review Materials, Vol. 3, Issue 12
DOI: 10.1103/PhysRevMaterials.3.124402

All-perovskite transparent high mobility field effect using epitaxial BaSnO ₃ and LaInO ₃
journal, March 2015

Kim, Useong; Park, Chulkwon; Ha, Taewoo
APL Materials, Vol. 3, Issue 3
DOI: 10.1063/1.4913587

Electron Energy-Loss Spectroscopy in the Electron Microscope
book, January 2011

Egerton, R. F.
DOI: 10.1007/978-1-4419-9583-4

Direct Observation of Electrostatically Driven Band Gap Renormalization in a Degenerate Perovskite Transparent Conducting Oxide
journal, January 2016

Lebens-Higgins, Z.; Scanlon, D. O.; Paik, H.
Physical Review Letters, Vol. 116, Issue 2
DOI: 10.1103/PhysRevLett.116.027602

Excellent structural, optical, and electrical properties of Nd-doped BaSnO ₃ transparent thin films
journal, November 2018

Fan, Fang-Yuan; Zhao, Wei-Yao; Chen, Ting-Wei
Applied Physics Letters, Vol. 113, Issue 20
DOI: 10.1063/1.5063538

Perpendicular magnetic anisotropy via strain-engineered oxygen vacancy ordering in epitaxial $L a_{1 - x} S r_{x} Co O_{3 - δ}$
journal, November 2018

Walter, Jeff; Bose, Shameek; Cabero, Mariona
Physical Review Materials, Vol. 2, Issue 11
DOI: 10.1103/PhysRevMaterials.2.111404

Unraveling the Oxygen Effect on the Properties of Sputtered BaSnO ₃ Thin Films
journal, December 2018

Luo, Bingcheng; Hu, Junbiao
ACS Applied Electronic Materials, Vol. 1, Issue 1
DOI: 10.1021/acsaelm.8b00007

Electronic band structure and optical phonons of BaSnO ₃ and Ba _0.97 La _0.03 SnO ₃ single crystals: Theory and experiment
journal, August 2012

Stanislavchuk, T. N.; Sirenko, A. A.; Litvinchuk, A. P.
Journal of Applied Physics, Vol. 112, Issue 4
DOI: 10.1063/1.4748309

Giant electrostatic modification of magnetism via electrolyte-gate-induced cluster percolation in $L a_{1 - x} S r_{x} Co O_{3 - δ}$
journal, November 2018

Walter, Jeff; Charlton, T.; Ambaye, H.
Physical Review Materials, Vol. 2, Issue 11
DOI: 10.1103/PhysRevMaterials.2.111406

Strain effects on the band gap and optical properties of perovskite SrSnO ₃ and BaSnO ₃
journal, January 2014

Singh, David J.; Xu, Qiang; Ong, Khuong P.
Applied Physics Letters, Vol. 104, Issue 1
DOI: 10.1063/1.4861838

Defect engineering of BaSnO $_{3}$ for high-performance transparent conducting oxide applications
journal, April 2013

Scanlon, David O.
Physical Review B, Vol. 87, Issue 16
DOI: 10.1103/PhysRevB.87.161201

Origin of the superior conductivity of perovskite Ba(Sr)SnO ₃
journal, March 2013

Liu, Heng-Rui; Yang, Ji-Hui; Xiang, H. J.
Applied Physics Letters, Vol. 102, Issue 11
DOI: 10.1063/1.4798325

Effects of vacuum annealing on the electron mobility of epitaxial La-doped BaSnO ₃ films
journal, February 2019

Cho, Hai Jun; Onozato, Takaki; Wei, Mian
APL Materials, Vol. 7, Issue 2
DOI: 10.1063/1.5054154

Depletion Mode MOSFET Using La-Doped BaSnO ₃ as a Channel Material
journal, June 2018

Yue, Jin; Prakash, Abhinav; Robbins, Matthew C.
ACS Applied Materials & Interfaces, Vol. 10, Issue 25
DOI: 10.1021/acsami.8b05229

Electrical and optical properties of Sb-doped BaSnO ₃ epitaxial films grown by pulsed laser deposition
journal, October 2010

Liu, Qinzhuang; Dai, Jianming; Liu, Zhongliang
Journal of Physics D: Applied Physics, Vol. 43, Issue 45
DOI: 10.1088/0022-3727/43/45/455401

Large-lattice-parameter perovskite single-crystal substrates
journal, January 2017

Uecker, Reinhard; Bertram, Rainer; Brützam, Mario
Journal of Crystal Growth, Vol. 457
DOI: 10.1016/j.jcrysgro.2016.03.014

Improvement of electron mobility in La:BaSnO ₃ thin films by insertion of an atomically flat insulating (Sr,Ba)SnO ₃ buffer layer
journal, June 2016

Shiogai, Junichi; Nishihara, Kazuki; Sato, Kazuhisa
AIP Advances, Vol. 6, Issue 6
DOI: 10.1063/1.4953808

Ferromagnetic/superconducting proximity effect in ${La}_{0.7} {Ca}_{0.3} {MnO}_{3} / {YBa}_{2} {Cu}_{3} O_{7 - δ}$ superlattices
journal, June 2003

Sefrioui, Z.; Arias, D.; Peña, V.
Physical Review B, Vol. 67, Issue 21
DOI: 10.1103/PhysRevB.67.214511

Alkaline earth stannates: The next silicon?
journal, June 2015

Ismail-Beigi, Sohrab; Walker, Frederick J.; Cheong, Sang-Wook
APL Materials, Vol. 3, Issue 6
DOI: 10.1063/1.4921338

High mobility field effect transistor based on BaSnO ₃ with Al ₂ O ₃ gate oxide
journal, November 2014

Park, Chulkwon; Kim, Useong; Ju, Chan Jong
Applied Physics Letters, Vol. 105, Issue 20
DOI: 10.1063/1.4901963

“Charge Leakage” at LaMnO ₃ /SrTiO ₃ Interfaces
journal, February 2010

Garcia-Barriocanal, Javier; Bruno, Flavio Y.; Rivera-Calzada, Alberto
Advanced Materials, Vol. 22, Issue 5
DOI: 10.1002/adma.200902263

Direct Evidence for Block-by-Block Growth in High-Temperature Superconductor Ultrathin Films
journal, May 2001

Varela, M.; Grogger, W.; Arias, D.
Physical Review Letters, Vol. 86, Issue 22
DOI: 10.1103/PhysRevLett.86.5156

Indications of strong neutral impurity scattering in Ba(Sn,Sb)O $_{3}$ single crystals
journal, September 2013

Kim, Hyung Joon; Kim, Jiyeon; Kim, Tai Hoon
Physical Review B, Vol. 88, Issue 12
DOI: 10.1103/PhysRevB.88.125204

Wide bandgap BaSnO3 films with room temperature conductivity exceeding 104 S cm−1
journal, May 2017

Prakash, Abhinav; Xu, Peng; Faghaninia, Alireza
Nature Communications, Vol. 8, Issue 1
DOI: 10.1038/ncomms15167

Substrate temperature effect on structure and properties of sputtered polycrystalline transparent conducting oxide films of La-doped BaSnO3
journal, December 2020

Tiwari, Alok; Wong, Ming-Show
Thin Solid Films, Vol. 715
DOI: 10.1016/j.tsf.2020.138427

Enhanced electron mobility in epitaxial (Ba,La)SnO ₃ films on BaSnO ₃ (001) substrates
journal, February 2016

Lee, Woong-Jhae; Kim, Hyung Joon; Sohn, Egon
Applied Physics Letters, Vol. 108, Issue 8
DOI: 10.1063/1.4942509

Structure and transport in high pressure oxygen sputter-deposited BaSnO _3−δ
journal, June 2015

Ganguly, Koustav; Ambwani, Palak; Xu, Peng
APL Materials, Vol. 3, Issue 6
DOI: 10.1063/1.4919969

Dopant-site-dependent scattering by dislocations in epitaxial films of perovskite semiconductor BaSnO ₃
journal, May 2014

Kim, Useong; Park, Chulkwon; Ha, Taewoo
APL Materials, Vol. 2, Issue 5
DOI: 10.1063/1.4874895

High Mobility in a Stable Transparent Perovskite Oxide
journal, May 2012

Kim, Hyung Joon; Kim, Useong; Kim, Hoon Min
Applied Physics Express, Vol. 5, Issue 6
DOI: 10.1143/APEX.5.061102

Adsorption-controlled growth of La-doped BaSnO ₃ by molecular-beam epitaxy
journal, November 2017

Paik, Hanjong; Chen, Zhen; Lochocki, Edward
APL Materials, Vol. 5, Issue 11
DOI: 10.1063/1.5001839

Microstructure characterization of BaSnO3 thin films on LaAlO3 and PrScO3 substrates from transmission electron microscopy
journal, July 2018

Yun, Hwanhui; Ganguly, Koustav; Postiglione, William
Scientific Reports, Vol. 8, Issue 1
DOI: 10.1038/s41598-018-28520-9

High-temperature-grown buffer layer boosts electron mobility in epitaxial La-doped BaSnO ₃ /SrZrO ₃ heterostructures
journal, April 2019

Nono Tchiomo, Arnaud P.; Braun, Wolfgang; Doyle, Bryan P.
APL Materials, Vol. 7, Issue 4
DOI: 10.1063/1.5094867

Large effects of dislocations on high mobility of epitaxial perovskite Ba _0.96 La _0.04 SnO ₃ films
journal, June 2013

Mun, Hyosik; Kim, Useong; Min Kim, Hoon
Applied Physics Letters, Vol. 102, Issue 25
DOI: 10.1063/1.4812642

Determination of the effective mass and nanoscale electrical transport in La-doped BaSnO 3 thin films
journal, January 2016

Luo, B. C.; Cao, X. S.; Jin, K. X.
Current Applied Physics, Vol. 16, Issue 1
DOI: 10.1016/j.cap.2015.10.006

Enhanced electron mobility at the two-dimensional metallic surface of BaSnO ₃ electric-double-layer transistor at low temperatures
journal, May 2017

Fujiwara, Kohei; Nishihara, Kazuki; Shiogai, Junichi
Applied Physics Letters, Vol. 110, Issue 20
DOI: 10.1063/1.4983611

Wide Bandgap Perovskite Oxides with High Room‐Temperature Electron Mobility
journal, June 2019

Prakash, Abhinav; Jalan, Bharat
Advanced Materials Interfaces, Vol. 6, Issue 15
DOI: 10.1002/admi.201900479

Electronic and Magnetic Reconstructions in ${La}_{0.7} {Sr}_{0.3} {MnO}_{3} / {SrTiO}_{3}$ Heterostructures: A Case of Enhanced Interlayer Coupling Controlled by the Interface
journal, April 2011

Bruno, F. Y.; Garcia-Barriocanal, J.; Varela, M.
Physical Review Letters, Vol. 106, Issue 14
DOI: 10.1103/PhysRevLett.106.147205

Hybrid reflections from multiple x-ray scattering in epitaxial oxide films
journal, September 2017

Smith, Eva H.; King, Phil D. C.; Soukiassian, Arsen
Applied Physics Letters, Vol. 111, Issue 13
DOI: 10.1063/1.4993477

Oxygen vacancy-assisted recovery process for increasing electron mobility in n-type BaSnO3 epitaxial thin films
journal, April 2018

Yoon, Daseob; Yu, Sangbae; Son, Junwoo
NPG Asia Materials, Vol. 10, Issue 4
DOI: 10.1038/s41427-018-0038-1

Stability of the oxygen vacancy induced conductivity in BaSnO ₃ thin films on SrTiO ₃
journal, October 2017

Jaim, H. M. Iftekhar; Lee, Seunghun; Zhang, Xiaohang
Applied Physics Letters, Vol. 111, Issue 17
DOI: 10.1063/1.4996548

High-mobility BaSnO ₃ grown by oxide molecular beam epitaxy
journal, January 2016

Raghavan, Santosh; Schumann, Timo; Kim, Honggyu
APL Materials, Vol. 4, Issue 1
DOI: 10.1063/1.4939657

High mobility BaSnO ₃ films and field effect transistors on non-perovskite MgO substrate
journal, December 2016

Shin, Juyeon; Kim, Young Mo; Kim, Youjung
Applied Physics Letters, Vol. 109, Issue 26
DOI: 10.1063/1.4973205

Electronic Structure, Electrical and Dielectric Properties of BaSnO ₃ below 300 K
journal, May 2008

Singh, Prabhakar; Brandenburg, Benjamin J.; Sebastian, C. Peter
Japanese Journal of Applied Physics, Vol. 47, Issue 5
DOI: 10.1143/JJAP.47.3540

Physical properties of transparent perovskite oxides (Ba,La)SnO $_{3}$ with high electrical mobility at room temperature
journal, October 2012

Kim, Hyung Joon; Kim, Useong; Kim, Tai Hoon
Physical Review B, Vol. 86, Issue 16
DOI: 10.1103/PhysRevB.86.165205

Epitaxial integration of high-mobility La-doped BaSnO ₃ thin films with silicon
journal, February 2019

Wang, Zhe; Paik, Hanjong; Chen, Zhen
APL Materials, Vol. 7, Issue 2
DOI: 10.1063/1.5054810

Wide-voltage-window reversible control of electronic transport in electrolyte-gated epitaxial ${BaSnO}_{3}$
journal, July 2019

Wang, Helin; Walter, Jeff; Ganguly, Koustav
Physical Review Materials, Vol. 3, Issue 7
DOI: 10.1103/PhysRevMaterials.3.075001

Growth temperature control of the epitaxy, magnetism, and transport in SrTiO ₃ (001)/La _0.5 Sr _0.5 CoO ₃ thin films
journal, September 2011

Sharma, M.; Gazquez, J.; Varela, M.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 29, Issue 5
DOI: 10.1116/1.3622621

Epitaxial mismatch strain in ${YBa}_{2} {Cu}_{3} O_{7 - δ} / {PrBa}_{2} {Cu}_{3} O_{7}$ superlattices
journal, November 2000

Varela, M.; Arias, D.; Sefrioui, Z.
Physical Review B, Vol. 62, Issue 18
DOI: 10.1103/PhysRevB.62.12509

Electronic and atomic structure of a dissociated dislocation in ${SrTiO}_{3}$
journal, December 2002

Zhang, Zaoli; Sigle, Wilfried; Kurtz, Wolfgang
Physical Review B, Vol. 66, Issue 21
DOI: 10.1103/PhysRevB.66.214112

Electrical transport, magnetic, and thermodynamic properties of La-, Pr-, and Nd-doped $BaSn O_{3 - δ}$ single crystals
journal, August 2018

McCalla, Eric; Phelan, Daniel; Krogstad, Matthew J.
Physical Review Materials, Vol. 2, Issue 8
DOI: 10.1103/PhysRevMaterials.2.084601

Defects, stoichiometry, and electronic transport in SrTiO3-δ epilayers: A high pressure oxygen sputter deposition study
journal, August 2016

Ambwani, P.; Xu, P.; Haugstad, G.
Journal of Applied Physics, Vol. 120, Issue 5
DOI: 10.1063/1.4960343

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Electrical transport, magnetic, and thermodynamic properties of La-, Pr-, and Nd-doped $BaSn O_{3 - δ}$ single crystals

Journal Article McCalla, Eric ; Phelan, Daniel ; Krogstad, Matthew J. ; ... - Physical Review Materials

Due to outstanding room temperature electron mobility, the wide-gap perovskite semiconductor BaSnO₃ is of high current interest. Although n doping with Sb and O vacancies has been reported, most work has focused solely on La doping. Here we report bulk single crystals of Ba_1–xR_xSnO_3–δ with R = La,Pr, and Nd, as well as unintentionally doped BaSnO_3–δ, thus exploring new rare earth (magnetic) dopants in addition to O vacancy doping. Consistent with recent results on epitaxial films, O vacancies are shown capable of generating mid-10¹⁹cm^–3 Hall electron densities, with single crystal mobilities ~100–150cm²V^–1s^–1. Despite apparent solubility limits below ~0.5at.%, Pr andmore »« less
Cited by 22
https://doi.org/10.1103/PhysRevMaterials.2.084601

Full Text Available
Gd-doped BaSnO₃: A transparent conducting oxide with localized magnetic moments

Journal Article Alaan, Urusa S. ; Shafer, Padraic ; N'Diaye, Alpha T. ; ... - Applied Physics Letters

We have synthesized transparent, conducting, paramagnetic stannate thin films via rare-earth doping of BaSnO₃. Gd³⁺(4f⁷) substitution on the Ba²⁺ site results in optical transparency in the visible regime, low resistivities, and high electron mobilities, along with a significant magnetic moment. Pulsed laser deposition was used to stabilize epitaxial Ba_0.96Gd_0.04SnO₃ thin films on (001) SrTiO₃ substrates, and compared with Ba_0.96La_0.04SnO₃ and undoped BaSnO₃ thin films. Gd as well as La doping schemes result in electron mobilities at room temperature that exceed those of conventional complex oxides, with values as high as 60 cm²/V·s (n = 2.5 × 10²⁰cm^-3) and 30 cm²/V·smore »« less
Cited by 33
https://doi.org/10.1063/1.4939686

Full Text Available
Gd-doped BaSnO{sub 3}: A transparent conducting oxide with localized magnetic moments

Journal Article Alaan, Urusa S., E-mail: usalaan@gmail.com ; Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 ; Shafer, Padraic ; ... - Applied Physics Letters

We have synthesized transparent, conducting, paramagnetic stannate thin films via rare-earth doping of BaSnO{sub 3}. Gd{sup 3+} (4f{sup 7}) substitution on the Ba{sup 2+} site results in optical transparency in the visible regime, low resistivities, and high electron mobilities, along with a significant magnetic moment. Pulsed laser deposition was used to stabilize epitaxial Ba{sub 0.96}Gd{sub 0.04}SnO{sub 3} thin films on (001) SrTiO{sub 3} substrates, and compared with Ba{sub 0.96}La{sub 0.04}SnO{sub 3} and undoped BaSnO{sub 3} thin films. Gd as well as La doping schemes result in electron mobilities at room temperature that exceed those of conventional complex oxides, with valuesmore »« less
https://doi.org/10.1063/1.4939686
Improved electrical mobility in highly epitaxial La:BaSnO{sub 3} films on SmScO{sub 3}(110) substrates

Journal Article Wadekar, P. V. ; O'Sullivan, M. ; Flack, N. L. O. ; ... - Applied Physics Letters

Heteroepitaxial growth of BaSnO{sub 3} and Ba{sub 1−x}La{sub x}SnO{sub 3} (x = 7%) lanthanum doped barium stannate thin films on different perovskite single crystal (SrTiO{sub 3} (001) and SmScO{sub 3} (110)) substrates has been achieved by pulsed laser deposition under optimized deposition conditions. X-ray diffraction measurements indicate that the films on either of these substrates are relaxed due to the large mismatch and present a high degree of crystallinity with narrow rocking curves and smooth surface morphology while analytical quantification by proton induced X-ray emission confirms the stoichiometric La transfer from a polyphasic target, producing films with measured La contents above themore »« less
https://doi.org/10.1063/1.4891816
Improvement of electron mobility in La:BaSnO{sub 3} thin films by insertion of an atomically flat insulating (Sr,Ba)SnO{sub 3} buffer layer

Journal Article Shiogai, Junichi ; Nishihara, Kazuki ; Sato, Kazuhisa ; ... - AIP Advances

One perovskite oxide, ASnO{sub 3} (A = Sr, Ba), is a candidate for use as a transparent conductive oxide with high electron mobility in single crystalline form. However, the electron mobility of films grown on SrTiO{sub 3} substrates does not reach the bulk value, probably because of dislocation scattering that originates from the large lattice mismatch. This study investigates the effect of insertion of bilayer BaSnO{sub 3} / (Sr,Ba)SnO{sub 3} for buffering this large lattice mismatch between La:BaSnO{sub 3} and SrTiO{sub 3} substrate. The insertion of 200-nm-thick BaSnO{sub 3} on (Sr,Ba)SnO{sub 3} bilayer buffer structures reduces the number of dislocationsmore »« less
https://doi.org/10.1063/1.4953808

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Title: Structure-property relationships and mobility optimization in sputtered La-doped BaSn O3 films: Toward 100cm2 V-1s-1

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Citation Formats

La-doped BaSnO 3 —Degenerate perovskite transparent conducting oxide: Evidence from synchrotron x-ray spectroscopy journal, July 2013

Enhancing electron mobility in La-doped BaSnO 3 thin films by thermal strain to annihilate extended defects journal, June 2016

Hydrothermal growth of BaSnO3 single crystals for wide bandgap applications journal, April 2020

High carrier mobility in transparent Ba 1−x La x SnO 3 crystals with a wide band gap journal, April 2012

Perovskite transparent conducting oxides: an ab initio study journal, September 2013

Hybrid molecular beam epitaxy for the growth of stoichiometric BaSnO 3 journal, November 2015

Frequency- and temperature-dependent dielectric response in hybrid molecular beam epitaxy-grown BaSnO 3 films journal, June 2018

Gd-doped BaSnO3: A transparent conducting oxide with localized magnetic moments journal, January 2016

Giant anisotropic magnetoresistance in oxygen-vacancy-ordered epitaxial La 0.5 Sr 0.5 Co O 3 − δ films journal, September 2020

Effect of chemical and ion‐beam etching on the atomic structure of interfaces in YBa 2 Cu 3 O 7 /PrBa 2 Cu 3 O 7 Josephson junctions journal, December 1995

Electrical and Optical Properties of Sb-Doped BaSnO 3 journal, September 2013

Scattering mechanisms and mobility enhancement in epitaxial BaSnO 3 thin films probed via electrolyte gating journal, July 2020

Large thickness dependence of the carrier mobility in a transparent oxide semiconductor, La-doped BaSnO 3 journal, June 2018

Adsorption-controlled growth and the influence of stoichiometry on electronic transport in hybrid molecular beam epitaxy-grown BaSnO 3 films journal, January 2017

Transparent Perovskite Barium Stannate with High Electron Mobility and Thermal Stability journal, July 2017

Colloidally prepared La-doped BaSnO 3 electrodes for efficient, photostable perovskite solar cells journal, March 2017

Mobility-electron density relation probed via controlled oxygen vacancy doping in epitaxial BaSnO 3 journal, May 2017

Improved electrical mobility in highly epitaxial La:BaSnO 3 films on SmScO 3 (110) substrates journal, August 2014

BaSnO 3 as a channel material in perovskite oxide heterostructures journal, February 2016

Structural, electrical, and luminescence characteristics of vacuum-annealed epitaxial (Ba,La)SnO3 thin films journal, June 2015

Atomic mapping of Ruddlesden-Popper faults in transparent conducting BaSnO3-based thin films journal, November 2015

Single crystal growth and characterization of Ba2ScNbO6 – A novel substrate for BaSnO3 films journal, December 2019

Low‐resistivity epitaxial YBa 2 Cu 3 O 7 thin films with improved microstructure and reduced microwave losses journal, June 1992

Origins of n -type doping difficulties in perovskite stannates journal, February 2018

Magnetism and transport in transparent high-mobility BaSnO 3 films doped with La, Pr, Nd, and Gd journal, December 2019

All-perovskite transparent high mobility field effect using epitaxial BaSnO 3 and LaInO 3 journal, March 2015

Electron Energy-Loss Spectroscopy in the Electron Microscope book, January 2011

Direct Observation of Electrostatically Driven Band Gap Renormalization in a Degenerate Perovskite Transparent Conducting Oxide journal, January 2016

Excellent structural, optical, and electrical properties of Nd-doped BaSnO 3 transparent thin films journal, November 2018

Perpendicular magnetic anisotropy via strain-engineered oxygen vacancy ordering in epitaxial L a 1 − x S r x Co O 3 − δ journal, November 2018

Unraveling the Oxygen Effect on the Properties of Sputtered BaSnO 3 Thin Films journal, December 2018

Electronic band structure and optical phonons of BaSnO 3 and Ba 0.97 La 0.03 SnO 3 single crystals: Theory and experiment journal, August 2012

Giant electrostatic modification of magnetism via electrolyte-gate-induced cluster percolation in L a 1 − x S r x Co O 3 − δ journal, November 2018

Strain effects on the band gap and optical properties of perovskite SrSnO 3 and BaSnO 3 journal, January 2014

Defect engineering of BaSnO 3 for high-performance transparent conducting oxide applications journal, April 2013

Origin of the superior conductivity of perovskite Ba(Sr)SnO 3 journal, March 2013

Effects of vacuum annealing on the electron mobility of epitaxial La-doped BaSnO 3 films journal, February 2019

Depletion Mode MOSFET Using La-Doped BaSnO 3 as a Channel Material journal, June 2018

Electrical and optical properties of Sb-doped BaSnO 3 epitaxial films grown by pulsed laser deposition journal, October 2010

Large-lattice-parameter perovskite single-crystal substrates journal, January 2017

Improvement of electron mobility in La:BaSnO 3 thin films by insertion of an atomically flat insulating (Sr,Ba)SnO 3 buffer layer journal, June 2016

Ferromagnetic/superconducting proximity effect in La 0.7 Ca 0.3 MnO 3 / YBa 2 Cu 3 O 7 − δ superlattices journal, June 2003

Alkaline earth stannates: The next silicon? journal, June 2015

High mobility field effect transistor based on BaSnO 3 with Al 2 O 3 gate oxide journal, November 2014

“Charge Leakage” at LaMnO 3 /SrTiO 3 Interfaces journal, February 2010

Direct Evidence for Block-by-Block Growth in High-Temperature Superconductor Ultrathin Films journal, May 2001

Indications of strong neutral impurity scattering in Ba(Sn,Sb)O 3 single crystals journal, September 2013

Wide bandgap BaSnO3 films with room temperature conductivity exceeding 104 S cm−1 journal, May 2017

Substrate temperature effect on structure and properties of sputtered polycrystalline transparent conducting oxide films of La-doped BaSnO3 journal, December 2020

Enhanced electron mobility in epitaxial (Ba,La)SnO 3 films on BaSnO 3 (001) substrates journal, February 2016

Structure and transport in high pressure oxygen sputter-deposited BaSnO 3−δ journal, June 2015

Dopant-site-dependent scattering by dislocations in epitaxial films of perovskite semiconductor BaSnO 3 journal, May 2014

High Mobility in a Stable Transparent Perovskite Oxide journal, May 2012

Adsorption-controlled growth of La-doped BaSnO 3 by molecular-beam epitaxy journal, November 2017

Microstructure characterization of BaSnO3 thin films on LaAlO3 and PrScO3 substrates from transmission electron microscopy journal, July 2018

High-temperature-grown buffer layer boosts electron mobility in epitaxial La-doped BaSnO 3 /SrZrO 3 heterostructures journal, April 2019

Large effects of dislocations on high mobility of epitaxial perovskite Ba 0.96 La 0.04 SnO 3 films journal, June 2013

Determination of the effective mass and nanoscale electrical transport in La-doped BaSnO 3 thin films journal, January 2016

Enhanced electron mobility at the two-dimensional metallic surface of BaSnO 3 electric-double-layer transistor at low temperatures journal, May 2017

Wide Bandgap Perovskite Oxides with High Room‐Temperature Electron Mobility journal, June 2019

Electronic and Magnetic Reconstructions in La 0.7 Sr 0.3 MnO 3 / SrTiO 3 Heterostructures: A Case of Enhanced Interlayer Coupling Controlled by the Interface journal, April 2011

Hybrid reflections from multiple x-ray scattering in epitaxial oxide films journal, September 2017

Oxygen vacancy-assisted recovery process for increasing electron mobility in n-type BaSnO3 epitaxial thin films journal, April 2018

Stability of the oxygen vacancy induced conductivity in BaSnO 3 thin films on SrTiO 3 journal, October 2017

High-mobility BaSnO 3 grown by oxide molecular beam epitaxy journal, January 2016

High mobility BaSnO 3 films and field effect transistors on non-perovskite MgO substrate journal, December 2016

Electronic Structure, Electrical and Dielectric Properties of BaSnO 3 below 300 K journal, May 2008

Physical properties of transparent perovskite oxides (Ba,La)SnO 3 with high electrical mobility at room temperature journal, October 2012

Epitaxial integration of high-mobility La-doped BaSnO 3 thin films with silicon journal, February 2019

Wide-voltage-window reversible control of electronic transport in electrolyte-gated epitaxial BaSnO 3 journal, July 2019

Growth temperature control of the epitaxy, magnetism, and transport in SrTiO 3 (001)/La 0.5 Sr 0.5 CoO 3 thin films journal, September 2011

Epitaxial mismatch strain in YBa 2 Cu 3 O 7 − δ / PrBa 2 Cu 3 O 7 superlattices journal, November 2000

Electronic and atomic structure of a dissociated dislocation in SrTiO 3 journal, December 2002

Electrical transport, magnetic, and thermodynamic properties of La-, Pr-, and Nd-doped BaSn O 3 − δ single crystals journal, August 2018

Defects, stoichiometry, and electronic transport in SrTiO3-δ epilayers: A high pressure oxygen sputter deposition study journal, August 2016

Title: Structure-property relationships and mobility optimization in sputtered La-doped BaSn O₃ films: Toward 100cm² V^-1s^-1

La-doped BaSnO ₃ —Degenerate perovskite transparent conducting oxide: Evidence from synchrotron x-ray spectroscopy
journal, July 2013

Enhancing electron mobility in La-doped BaSnO ₃ thin films by thermal strain to annihilate extended defects
journal, June 2016

Hydrothermal growth of BaSnO3 single crystals for wide bandgap applications
journal, April 2020

High carrier mobility in transparent Ba _1−x La _x SnO ₃ crystals with a wide band gap
journal, April 2012

Perovskite transparent conducting oxides: an ab initio study
journal, September 2013

Hybrid molecular beam epitaxy for the growth of stoichiometric BaSnO ₃
journal, November 2015

Frequency- and temperature-dependent dielectric response in hybrid molecular beam epitaxy-grown BaSnO ₃ films
journal, June 2018

Gd-doped BaSnO3: A transparent conducting oxide with localized magnetic moments
journal, January 2016

Giant anisotropic magnetoresistance in oxygen-vacancy-ordered epitaxial ${La}_{0.5} {Sr}_{0.5} Co O_{3 - δ}$ films
journal, September 2020

Effect of chemical and ion‐beam etching on the atomic structure of interfaces in YBa ₂ Cu ₃ O ₇ /PrBa ₂ Cu ₃ O ₇ Josephson junctions
journal, December 1995

Electrical and Optical Properties of Sb-Doped BaSnO ₃
journal, September 2013

Scattering mechanisms and mobility enhancement in epitaxial BaSnO ₃ thin films probed via electrolyte gating
journal, July 2020

Large thickness dependence of the carrier mobility in a transparent oxide semiconductor, La-doped BaSnO ₃
journal, June 2018

Adsorption-controlled growth and the influence of stoichiometry on electronic transport in hybrid molecular beam epitaxy-grown BaSnO ₃ films
journal, January 2017

Transparent Perovskite Barium Stannate with High Electron Mobility and Thermal Stability
journal, July 2017

Colloidally prepared La-doped BaSnO ₃ electrodes for efficient, photostable perovskite solar cells
journal, March 2017

Mobility-electron density relation probed via controlled oxygen vacancy doping in epitaxial BaSnO ₃
journal, May 2017

Improved electrical mobility in highly epitaxial La:BaSnO ₃ films on SmScO ₃ (110) substrates
journal, August 2014

BaSnO ₃ as a channel material in perovskite oxide heterostructures
journal, February 2016

Structural, electrical, and luminescence characteristics of vacuum-annealed epitaxial (Ba,La)SnO3 thin films
journal, June 2015

Atomic mapping of Ruddlesden-Popper faults in transparent conducting BaSnO3-based thin films
journal, November 2015

Single crystal growth and characterization of Ba2ScNbO6 – A novel substrate for BaSnO3 films
journal, December 2019

Low‐resistivity epitaxial YBa ₂ Cu ₃ O ₇ thin films with improved microstructure and reduced microwave losses
journal, June 1992

Origins of $n$ -type doping difficulties in perovskite stannates
journal, February 2018

Magnetism and transport in transparent high-mobility ${BaSnO}_{3}$ films doped with La, Pr, Nd, and Gd
journal, December 2019

All-perovskite transparent high mobility field effect using epitaxial BaSnO ₃ and LaInO ₃
journal, March 2015

Electron Energy-Loss Spectroscopy in the Electron Microscope
book, January 2011

Direct Observation of Electrostatically Driven Band Gap Renormalization in a Degenerate Perovskite Transparent Conducting Oxide
journal, January 2016

Excellent structural, optical, and electrical properties of Nd-doped BaSnO ₃ transparent thin films
journal, November 2018

Perpendicular magnetic anisotropy via strain-engineered oxygen vacancy ordering in epitaxial $L a_{1 - x} S r_{x} Co O_{3 - δ}$
journal, November 2018

Unraveling the Oxygen Effect on the Properties of Sputtered BaSnO ₃ Thin Films
journal, December 2018

Electronic band structure and optical phonons of BaSnO ₃ and Ba _0.97 La _0.03 SnO ₃ single crystals: Theory and experiment
journal, August 2012

Giant electrostatic modification of magnetism via electrolyte-gate-induced cluster percolation in $L a_{1 - x} S r_{x} Co O_{3 - δ}$
journal, November 2018

Strain effects on the band gap and optical properties of perovskite SrSnO ₃ and BaSnO ₃
journal, January 2014

Defect engineering of BaSnO $_{3}$ for high-performance transparent conducting oxide applications
journal, April 2013

Origin of the superior conductivity of perovskite Ba(Sr)SnO ₃
journal, March 2013

Effects of vacuum annealing on the electron mobility of epitaxial La-doped BaSnO ₃ films
journal, February 2019

Depletion Mode MOSFET Using La-Doped BaSnO ₃ as a Channel Material
journal, June 2018

Electrical and optical properties of Sb-doped BaSnO ₃ epitaxial films grown by pulsed laser deposition
journal, October 2010

Large-lattice-parameter perovskite single-crystal substrates
journal, January 2017

Improvement of electron mobility in La:BaSnO ₃ thin films by insertion of an atomically flat insulating (Sr,Ba)SnO ₃ buffer layer
journal, June 2016

Ferromagnetic/superconducting proximity effect in ${La}_{0.7} {Ca}_{0.3} {MnO}_{3} / {YBa}_{2} {Cu}_{3} O_{7 - δ}$ superlattices
journal, June 2003

Alkaline earth stannates: The next silicon?
journal, June 2015

High mobility field effect transistor based on BaSnO ₃ with Al ₂ O ₃ gate oxide
journal, November 2014

“Charge Leakage” at LaMnO ₃ /SrTiO ₃ Interfaces
journal, February 2010

Direct Evidence for Block-by-Block Growth in High-Temperature Superconductor Ultrathin Films
journal, May 2001

Indications of strong neutral impurity scattering in Ba(Sn,Sb)O $_{3}$ single crystals
journal, September 2013

Wide bandgap BaSnO3 films with room temperature conductivity exceeding 104 S cm−1
journal, May 2017

Substrate temperature effect on structure and properties of sputtered polycrystalline transparent conducting oxide films of La-doped BaSnO3
journal, December 2020

Enhanced electron mobility in epitaxial (Ba,La)SnO ₃ films on BaSnO ₃ (001) substrates
journal, February 2016

Structure and transport in high pressure oxygen sputter-deposited BaSnO _3−δ
journal, June 2015

Dopant-site-dependent scattering by dislocations in epitaxial films of perovskite semiconductor BaSnO ₃
journal, May 2014

High Mobility in a Stable Transparent Perovskite Oxide
journal, May 2012

Adsorption-controlled growth of La-doped BaSnO ₃ by molecular-beam epitaxy
journal, November 2017

Microstructure characterization of BaSnO3 thin films on LaAlO3 and PrScO3 substrates from transmission electron microscopy
journal, July 2018

High-temperature-grown buffer layer boosts electron mobility in epitaxial La-doped BaSnO ₃ /SrZrO ₃ heterostructures
journal, April 2019

Large effects of dislocations on high mobility of epitaxial perovskite Ba _0.96 La _0.04 SnO ₃ films
journal, June 2013

Determination of the effective mass and nanoscale electrical transport in La-doped BaSnO 3 thin films
journal, January 2016

Enhanced electron mobility at the two-dimensional metallic surface of BaSnO ₃ electric-double-layer transistor at low temperatures
journal, May 2017

Wide Bandgap Perovskite Oxides with High Room‐Temperature Electron Mobility
journal, June 2019

Electronic and Magnetic Reconstructions in ${La}_{0.7} {Sr}_{0.3} {MnO}_{3} / {SrTiO}_{3}$ Heterostructures: A Case of Enhanced Interlayer Coupling Controlled by the Interface
journal, April 2011

Hybrid reflections from multiple x-ray scattering in epitaxial oxide films
journal, September 2017

Oxygen vacancy-assisted recovery process for increasing electron mobility in n-type BaSnO3 epitaxial thin films
journal, April 2018

Stability of the oxygen vacancy induced conductivity in BaSnO ₃ thin films on SrTiO ₃
journal, October 2017

High-mobility BaSnO ₃ grown by oxide molecular beam epitaxy
journal, January 2016

High mobility BaSnO ₃ films and field effect transistors on non-perovskite MgO substrate
journal, December 2016

Electronic Structure, Electrical and Dielectric Properties of BaSnO ₃ below 300 K
journal, May 2008

Physical properties of transparent perovskite oxides (Ba,La)SnO $_{3}$ with high electrical mobility at room temperature
journal, October 2012

Epitaxial integration of high-mobility La-doped BaSnO ₃ thin films with silicon
journal, February 2019

Wide-voltage-window reversible control of electronic transport in electrolyte-gated epitaxial ${BaSnO}_{3}$
journal, July 2019

Growth temperature control of the epitaxy, magnetism, and transport in SrTiO ₃ (001)/La _0.5 Sr _0.5 CoO ₃ thin films
journal, September 2011

Epitaxial mismatch strain in ${YBa}_{2} {Cu}_{3} O_{7 - δ} / {PrBa}_{2} {Cu}_{3} O_{7}$ superlattices
journal, November 2000

Electronic and atomic structure of a dissociated dislocation in ${SrTiO}_{3}$
journal, December 2002

Electrical transport, magnetic, and thermodynamic properties of La-, Pr-, and Nd-doped $BaSn O_{3 - δ}$ single crystals
journal, August 2018

Defects, stoichiometry, and electronic transport in SrTiO3-δ epilayers: A high pressure oxygen sputter deposition study
journal, August 2016