Van der Waals heterostructure for topological valleytronics
Abstract
We identify a valley-polarized Chern insulator in a van der Waals heterostructure, monolayer Pt2HgSe3/monolayer CrI3, for potential applications with interplay between electric, magnetic, optical, and mechanical effects. The interlayer proximity magnetic coupling nearly closes the band gap of monolayer Pt2HgSe3, and the strong intralayer spin-orbit coupling further lifts the valley degeneracy by over 100 meV, leading to positive and negative band gaps at opposite valleys. In the valley with negative gap, the interfacial Rashba spin-orbit coupling opens a topological band gap of 17.8 meV, which is enlarged to 30.8 meV by adding a hexagonal boron nitride (h-BN) layer. We find large orbital magnetization in the Pt2HgSe3 layer that is much larger than spin, which can induce a measurable optical Kerr effect. Additionally, the valley polarization and Chern number are coupled to the magnetic order of the nearest-neighbor CrI3 layer, which is switchable by electric, magnetic, and mechanical means in experiments. The presence of h-BN protects the topological phase, allowing the construction of superlattices with valley, spin, and layer degrees of freedom.
- Authors:
-
- Univ. of Science and Technology of China, Hefei (China). CAS Key Lab. of Strongly-Coupled Quantum Matter Physics, Hefei National Lab. for Physical Sciences at Microscale
- Univ. of Science and Technology of China, Hefei (China). CAS Key Lab. of Strongly-Coupled Quantum Matter Physics, Hefei National Lab. for Physical Sciences at Microscale; Fuzhou Univ. (China)
- Univ. of Texas, Austin, TX (United States)
- Publication Date:
- Research Org.:
- Univ. of Texas, Austin, TX (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; National Key Research and Development Program of China; National Natural Science Foundation of China (NSFC); China Postdoctoral Science Foundation
- OSTI Identifier:
- 1850223
- Grant/Contract Number:
- FG03-02ER45958; 2017YFB0405703; 11974327; 2020M681998; F-1255
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review. B
- Additional Journal Information:
- Journal Volume: 104; Journal Issue: 12; Journal ID: ISSN 2469-9950
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Materials Science; physics; electronic structure; first-principles calculations; Kane-Mele model; topological materials; topological phases of matter; valleytronics
Citation Formats
Liu, Zheng, Han, Yulei, Ren, Yafei, Niu, Qian, and Qiao, Zhenhua. Van der Waals heterostructure Pt2HgSe3/CrI3 for topological valleytronics. United States: N. p., 2021.
Web. doi:10.1103/physrevb.104.l121403.
Liu, Zheng, Han, Yulei, Ren, Yafei, Niu, Qian, & Qiao, Zhenhua. Van der Waals heterostructure Pt2HgSe3/CrI3 for topological valleytronics. United States. https://doi.org/10.1103/physrevb.104.l121403
Liu, Zheng, Han, Yulei, Ren, Yafei, Niu, Qian, and Qiao, Zhenhua. Tue .
"Van der Waals heterostructure Pt2HgSe3/CrI3 for topological valleytronics". United States. https://doi.org/10.1103/physrevb.104.l121403. https://www.osti.gov/servlets/purl/1850223.
@article{osti_1850223,
title = {Van der Waals heterostructure Pt2HgSe3/CrI3 for topological valleytronics},
author = {Liu, Zheng and Han, Yulei and Ren, Yafei and Niu, Qian and Qiao, Zhenhua},
abstractNote = {We identify a valley-polarized Chern insulator in a van der Waals heterostructure, monolayer Pt2HgSe3/monolayer CrI3, for potential applications with interplay between electric, magnetic, optical, and mechanical effects. The interlayer proximity magnetic coupling nearly closes the band gap of monolayer Pt2HgSe3, and the strong intralayer spin-orbit coupling further lifts the valley degeneracy by over 100 meV, leading to positive and negative band gaps at opposite valleys. In the valley with negative gap, the interfacial Rashba spin-orbit coupling opens a topological band gap of 17.8 meV, which is enlarged to 30.8 meV by adding a hexagonal boron nitride (h-BN) layer. We find large orbital magnetization in the Pt2HgSe3 layer that is much larger than spin, which can induce a measurable optical Kerr effect. Additionally, the valley polarization and Chern number are coupled to the magnetic order of the nearest-neighbor CrI3 layer, which is switchable by electric, magnetic, and mechanical means in experiments. The presence of h-BN protects the topological phase, allowing the construction of superlattices with valley, spin, and layer degrees of freedom.},
doi = {10.1103/physrevb.104.l121403},
journal = {Physical Review. B},
number = 12,
volume = 104,
place = {United States},
year = {Tue Sep 14 00:00:00 EDT 2021},
month = {Tue Sep 14 00:00:00 EDT 2021}
}
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