Nanoscale control of LaAlO 3 /SrTiO 3 metal–insulator transition using ultra-low-voltage electron-beam lithography
Abstract
In this work, we describe a method to control the insulator–metal transition at the LaAlO3/SrTiO3 interface using ultra-low-voltage electron beam lithography. Compared to previous reports that utilize conductive atomic force microscope (c-AFM) lithography, this approach can provide comparable resolution (~10 nm) at write speeds (10 mm/s) that are up to 10 000× faster than c-AFM. The writing technique is nondestructive, and the conductive state is reversible via prolonged exposure to air. Transport properties of representative devices are measured at milli-Kelvin temperatures, where superconducting behavior is observed. We also demonstrate the ability to create conducting devices on graphene/LaAlO3/SrTiO3 heterostructures. The underlying mechanism is believed to be closely related to the same mechanism regulating c-AFM-based methods.
- Authors:
-
[1];
[1];
[2];
[1];
[3];
[1];
[1]
- University of Pittsburgh, Pittsburgh, PA (United States). Department of Physics and Astronomy; Pittsburgh Quantum Institute, Pittsburgh, PA (United States)
- Univ. of Pittsburgh, PA (United States). Department of Electrical and Computer Engineering and Peterson Institute of Nanoscience and Engineering
- University of Wisconsin-Madison, Madison, WI (United States). Department of Materials Science and Engineering
- Publication Date:
- Research Org.:
- Univ. of Wisconsin, Madison, WI (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); US Office of Naval Research (ONR)
- OSTI Identifier:
- 1849704
- Alternate Identifier(s):
- OSTI ID: 1737864
- Grant/Contract Number:
- FG02-06ER46327; N00014-20-1-2481; N00014-15-2847
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 117; Journal Issue: 25; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Physics
Citation Formats
Yang, Dengyu, Hao, Shan, Chen, Jun, Guo, Qing, Yu, Muqing, Hu, Yang, Eom, Kitae, Lee, Jung-Woo, Eom, Chang-Beom, Irvin, Patrick, and Levy, Jeremy. Nanoscale control of LaAlO 3 /SrTiO 3 metal–insulator transition using ultra-low-voltage electron-beam lithography. United States: N. p., 2020.
Web. doi:10.1063/5.0027480.
Yang, Dengyu, Hao, Shan, Chen, Jun, Guo, Qing, Yu, Muqing, Hu, Yang, Eom, Kitae, Lee, Jung-Woo, Eom, Chang-Beom, Irvin, Patrick, & Levy, Jeremy. Nanoscale control of LaAlO 3 /SrTiO 3 metal–insulator transition using ultra-low-voltage electron-beam lithography. United States. https://doi.org/10.1063/5.0027480
Yang, Dengyu, Hao, Shan, Chen, Jun, Guo, Qing, Yu, Muqing, Hu, Yang, Eom, Kitae, Lee, Jung-Woo, Eom, Chang-Beom, Irvin, Patrick, and Levy, Jeremy. Mon .
"Nanoscale control of LaAlO 3 /SrTiO 3 metal–insulator transition using ultra-low-voltage electron-beam lithography". United States. https://doi.org/10.1063/5.0027480. https://www.osti.gov/servlets/purl/1849704.
@article{osti_1849704,
title = {Nanoscale control of LaAlO 3 /SrTiO 3 metal–insulator transition using ultra-low-voltage electron-beam lithography},
author = {Yang, Dengyu and Hao, Shan and Chen, Jun and Guo, Qing and Yu, Muqing and Hu, Yang and Eom, Kitae and Lee, Jung-Woo and Eom, Chang-Beom and Irvin, Patrick and Levy, Jeremy},
abstractNote = {In this work, we describe a method to control the insulator–metal transition at the LaAlO3/SrTiO3 interface using ultra-low-voltage electron beam lithography. Compared to previous reports that utilize conductive atomic force microscope (c-AFM) lithography, this approach can provide comparable resolution (~10 nm) at write speeds (10 mm/s) that are up to 10 000× faster than c-AFM. The writing technique is nondestructive, and the conductive state is reversible via prolonged exposure to air. Transport properties of representative devices are measured at milli-Kelvin temperatures, where superconducting behavior is observed. We also demonstrate the ability to create conducting devices on graphene/LaAlO3/SrTiO3 heterostructures. The underlying mechanism is believed to be closely related to the same mechanism regulating c-AFM-based methods.},
doi = {10.1063/5.0027480},
journal = {Applied Physics Letters},
number = 25,
volume = 117,
place = {United States},
year = {Mon Dec 21 00:00:00 EST 2020},
month = {Mon Dec 21 00:00:00 EST 2020}
}
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