Net versus gross erosion of silicon carbide in DIII-D divertor
Abstract
Gross and net erosion rates of silicon from silicon carbide (SiC) coatings were measured in the divertor of DIII-D under well diagnosed reactor-relevant plasma conditions. Amorphous and crystalline SiC coatings on graphite with thickness of ~80 nm and ~250 μm, respectively, were exposed near an attached outer strike point of lower single null L-mode plasmas using the Divertor Material Evaluation System (DiMES). Plasma density and electron temperature near the center of the coatings were ne ~ 4 × 1019 m-3 and T e ~ 23 eV. Gross erosion of Si from all samples was measured spectroscopically using the Si II 636 nm line. It was found to be a factor of ~4 higher for the amorphous coatings compared to the crystalline one. The thin amorphous coatings allowed measurements of net Si erosion with Rutherford backscattering. Net average Si erosion rate of ~3 × 1016 cm-2 s-1 was measured on the amorphous coatings with toroidal extent of 1 mm, where, according to ERO code modeling, the local redeposition of Si was about 30%. Using this rate, spectroscopic measurements, measured D+ ion fluxes, and corrections from ERO-OEDGE modeling, effective SXB coefficient for the Si II 636 nm line of ~52 and Simore »
- Authors:
-
- Univ. of California, San Diego, CA (United States)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- General Atomics, San Diego, CA (United States)
- Chinese Academy of Sciences (CAS), Hefei (China)
- Univ. of Toronto, ON (Canada)
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Publication Date:
- Research Org.:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA); National Natural Science Foundation of China (NSFC)
- OSTI Identifier:
- 1832712
- Alternate Identifier(s):
- OSTI ID: 1860688
- Report Number(s):
- LLNL-JRNL-830756
Journal ID: ISSN 0031-8949; TRN: US2216761
- Grant/Contract Number:
- AC05-00OR22725; FG02-07ER54917; FC02-04ER54698; NA0003525; AC52-07NA27344; SC0018423; 11861131010; 11675218
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physica Scripta
- Additional Journal Information:
- Journal Volume: T171; Journal Issue: T171; Journal ID: ISSN 0031-8949
- Publisher:
- IOP Publishing
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 70 PLASMA PHYSICS AND FUSION TECHNOLOGY; DIII-D tokamak; DiMES; silicon carbide
Citation Formats
Rudakov, D. L., Wampler, W. R., Abrams, T., Ding, R., Boedo, J. A., Bringuier, S., Bykov, I., Chrobak, C. P., Elder, J. D., Guo, H. Y., Lasnier, C. J., Mathison, E., McLean, A. G., Sinclair, G., Stangeby, P. C., Thomas, D. M., Unterberg, E. A., Wang, H., and Watkins, J. G. Net versus gross erosion of silicon carbide in DIII-D divertor. United States: N. p., 2020.
Web. doi:10.1088/1402-4896/ab61dc.
Rudakov, D. L., Wampler, W. R., Abrams, T., Ding, R., Boedo, J. A., Bringuier, S., Bykov, I., Chrobak, C. P., Elder, J. D., Guo, H. Y., Lasnier, C. J., Mathison, E., McLean, A. G., Sinclair, G., Stangeby, P. C., Thomas, D. M., Unterberg, E. A., Wang, H., & Watkins, J. G. Net versus gross erosion of silicon carbide in DIII-D divertor. United States. https://doi.org/10.1088/1402-4896/ab61dc
Rudakov, D. L., Wampler, W. R., Abrams, T., Ding, R., Boedo, J. A., Bringuier, S., Bykov, I., Chrobak, C. P., Elder, J. D., Guo, H. Y., Lasnier, C. J., Mathison, E., McLean, A. G., Sinclair, G., Stangeby, P. C., Thomas, D. M., Unterberg, E. A., Wang, H., and Watkins, J. G. Wed .
"Net versus gross erosion of silicon carbide in DIII-D divertor". United States. https://doi.org/10.1088/1402-4896/ab61dc. https://www.osti.gov/servlets/purl/1832712.
@article{osti_1832712,
title = {Net versus gross erosion of silicon carbide in DIII-D divertor},
author = {Rudakov, D. L. and Wampler, W. R. and Abrams, T. and Ding, R. and Boedo, J. A. and Bringuier, S. and Bykov, I. and Chrobak, C. P. and Elder, J. D. and Guo, H. Y. and Lasnier, C. J. and Mathison, E. and McLean, A. G. and Sinclair, G. and Stangeby, P. C. and Thomas, D. M. and Unterberg, E. A. and Wang, H. and Watkins, J. G.},
abstractNote = {Gross and net erosion rates of silicon from silicon carbide (SiC) coatings were measured in the divertor of DIII-D under well diagnosed reactor-relevant plasma conditions. Amorphous and crystalline SiC coatings on graphite with thickness of ~80 nm and ~250 μm, respectively, were exposed near an attached outer strike point of lower single null L-mode plasmas using the Divertor Material Evaluation System (DiMES). Plasma density and electron temperature near the center of the coatings were ne ~ 4 × 1019 m-3 and T e ~ 23 eV. Gross erosion of Si from all samples was measured spectroscopically using the Si II 636 nm line. It was found to be a factor of ~4 higher for the amorphous coatings compared to the crystalline one. The thin amorphous coatings allowed measurements of net Si erosion with Rutherford backscattering. Net average Si erosion rate of ~3 × 1016 cm-2 s-1 was measured on the amorphous coatings with toroidal extent of 1 mm, where, according to ERO code modeling, the local redeposition of Si was about 30%. Using this rate, spectroscopic measurements, measured D+ ion fluxes, and corrections from ERO-OEDGE modeling, effective SXB coefficient for the Si II 636 nm line of ~52 and Si sputtering yield of ~0.017 Si/D were calculated. Finally, deuterium retention on SiC coatings was measured by 2.5 MeV 3He nuclear reaction analysis at 0.5–2.5 × 1017 atoms cm-2, consistent with retention due to implantation into a surface undergoing net erosion.},
doi = {10.1088/1402-4896/ab61dc},
journal = {Physica Scripta},
number = T171,
volume = T171,
place = {United States},
year = {Wed Mar 18 00:00:00 EDT 2020},
month = {Wed Mar 18 00:00:00 EDT 2020}
}
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