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Title: Wake-up and fatigue mechanisms in ferroelectric Hf0.5Zr0.5O2 films with symmetric RuO2 electrodes

Abstract

In this work, the mechanisms leading to wake-up and fatigue in ferroelectric hafnium zirconium oxide thin film devices with symmetric RuO2 electrodes are investigated via polarization, relative permittivity, dielectric nonlinearity, pyroelectric coefficient, and microfocus X-ray diffraction (XRD) measurements. The devices are observed to wake-up for up to 103 bipolar pulsed field cycles, after which fatigue occurs with the polarization approaching zero following 108 cycles. Wake-up is accompanied by a decrease in both high-field permittivity and hysteresis loop pinching and an increase in pyroelectric coefficient, indicating that the wake-up process involves a combination of transformations from the tetragonal to the orthorhombic phase and domain depinning from defect redistribution. Fatigue is observed to coincide with an increase in irreversible domain wall motion and a decrease in pyroelectric coefficient. Finite pyroelectric coefficients are measured on fully fatigued devices, indicating that domain pinning is a strong contributor to fatigue and that fatigued devices contain domain structures that are unable to switch under the fields applied for measurement. Microfocus XRD patterns measured on each device reveal that the phase constitution is qualitatively unaffected by the field cycling and resultant polarization fatigue. This data indicates that the wake-up process has contributions from both phase transformations andmore » domain depinning, whereas the fatigue process is driven primarily by domain pinning, and the near-zero measured switchable polarization is actually a poled device with immobile domains. These observations provide insight into the physical changes occurring during field cycling of HfO2-based ferroelectrics while examining a possible oxide electrode material for silicon CMOS device implementation.« less

Authors:
ORCiD logo [1];  [2];  [1];  [1]; ORCiD logo [1]; ORCiD logo [2];  [2]; ORCiD logo [2]; ORCiD logo [2]; ORCiD logo [1]
+ Show Author Affiliations
  1. Univ. of Virginia, Charlottesville, VA (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Pennsylvania State Univ., University Park, PA (United States)
Sponsoring Org.:
USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF)
OSTI Identifier:
1831810
Alternate Identifier(s):
OSTI ID: 1823498
Grant/Contract Number:  
SC0021118; NA0003525; CHE-2018870; DGE-1842490
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 130; Journal Issue: 13; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Thin film devices; Pyroelectricity; Ferroelectric materials; X-ray diffraction; Electrical properties and parameters; Electrodes; Crystal structure; Phase transitions

Citation Formats

Fields, Shelby S., Smith, Sean W., Jaszewski, Samantha T., Mimura, Takanori, Dickie, Diane A., Esteves, Giovanni, David Henry, M., Wolfley, Steve L., Davids, Paul S., and Ihlefeld, Jon F. Wake-up and fatigue mechanisms in ferroelectric Hf0.5Zr0.5O2 films with symmetric RuO2 electrodes. United States: N. p., 2021. Web. doi:10.1063/5.0064145.
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Fields, Shelby S., Smith, Sean W., Jaszewski, Samantha T., Mimura, Takanori, Dickie, Diane A., Esteves, Giovanni, David Henry, M., Wolfley, Steve L., Davids, Paul S., & Ihlefeld, Jon F. Wake-up and fatigue mechanisms in ferroelectric Hf0.5Zr0.5O2 films with symmetric RuO2 electrodes. United States. https://doi.org/10.1063/5.0064145
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Fields, Shelby S., Smith, Sean W., Jaszewski, Samantha T., Mimura, Takanori, Dickie, Diane A., Esteves, Giovanni, David Henry, M., Wolfley, Steve L., Davids, Paul S., and Ihlefeld, Jon F. Mon . "Wake-up and fatigue mechanisms in ferroelectric Hf0.5Zr0.5O2 films with symmetric RuO2 electrodes". United States. https://doi.org/10.1063/5.0064145. https://www.osti.gov/servlets/purl/1831810.
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@article{osti_1831810,
title = {Wake-up and fatigue mechanisms in ferroelectric Hf0.5Zr0.5O2 films with symmetric RuO2 electrodes},
author = {Fields, Shelby S. and Smith, Sean W. and Jaszewski, Samantha T. and Mimura, Takanori and Dickie, Diane A. and Esteves, Giovanni and David Henry, M. and Wolfley, Steve L. and Davids, Paul S. and Ihlefeld, Jon F.},
abstractNote = {In this work, the mechanisms leading to wake-up and fatigue in ferroelectric hafnium zirconium oxide thin film devices with symmetric RuO2 electrodes are investigated via polarization, relative permittivity, dielectric nonlinearity, pyroelectric coefficient, and microfocus X-ray diffraction (XRD) measurements. The devices are observed to wake-up for up to 103 bipolar pulsed field cycles, after which fatigue occurs with the polarization approaching zero following 108 cycles. Wake-up is accompanied by a decrease in both high-field permittivity and hysteresis loop pinching and an increase in pyroelectric coefficient, indicating that the wake-up process involves a combination of transformations from the tetragonal to the orthorhombic phase and domain depinning from defect redistribution. Fatigue is observed to coincide with an increase in irreversible domain wall motion and a decrease in pyroelectric coefficient. Finite pyroelectric coefficients are measured on fully fatigued devices, indicating that domain pinning is a strong contributor to fatigue and that fatigued devices contain domain structures that are unable to switch under the fields applied for measurement. Microfocus XRD patterns measured on each device reveal that the phase constitution is qualitatively unaffected by the field cycling and resultant polarization fatigue. This data indicates that the wake-up process has contributions from both phase transformations and domain depinning, whereas the fatigue process is driven primarily by domain pinning, and the near-zero measured switchable polarization is actually a poled device with immobile domains. These observations provide insight into the physical changes occurring during field cycling of HfO2-based ferroelectrics while examining a possible oxide electrode material for silicon CMOS device implementation.},
doi = {10.1063/5.0064145},
journal = {Journal of Applied Physics},
number = 13,
volume = 130,
place = {United States},
year = {Mon Oct 04 00:00:00 EDT 2021},
month = {Mon Oct 04 00:00:00 EDT 2021}
}
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