Gallium vacancy formation in oxygen annealed β-Ga2O3
Abstract
Here, the formation and character of gallium vacancies (VGa) and their complexes in near surface and bulk regions of single crystal β-Ga2O3 were explored using unintentionally doped single crystals grown by the Czochralski method. As-grown and O2 annealed (up to 1550 °C) samples were investigated using positron annihilation spectroscopy (PAS) to study the top 0.05–6 μm, and also current–voltage measurements and infrared (IR) spectroscopy, with hydrogenated samples to probe VGa, to study the bulk. After annealing in O2 > 1000 °C, the β-Ga2O3 resistivity begins increasing, up to ~109 Ω cm for 1550 °C treatment, with the top 0.5 mm being many orders of magnitude more resistive. PAS measurements of the top 6 μm (S values) and very near surface 200 nm (diffusion length, L) indicate differential behavior as a function of peak annealing temperature. At least four temperature regimes of behavior are described. VGa are present in the bulk after growth, but considerable changes occur upon annealing at a temperature ≈1000 °C, where L and S decrease simultaneously, suggesting an increasing defect concentration (L) but a decreasing defect volume (S). Annealing at a temperature ≈1400 °C increases S again, showing an increasing volume concentration of VGa, with IR absorptionmore »
- Publication Date:
- Research Org.:
- Washington State Univ., Pullman, WA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; US Air Force Office of Scientific Research (AFOSR); USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1829318
- Alternate Identifier(s):
- OSTI ID: 1798223
- Grant/Contract Number:
- FG02-07ER46386; FA9550-18-1-0507
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 129; Journal Issue: 24; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 74 ATOMIC AND MOLECULAR PHYSICS; Annealing; Doping; Infrared spectroscopy; Semiconductor growth; Positron annihilation spectroscopy; Depth profiling techniques; Oxides; Doppler effect
Citation Formats
Jesenovec, Jani, Weber, Marc H., Pansegrau, Christopher, McCluskey, Matthew D., Lynn, Kelvin G., and McCloy, John S. Gallium vacancy formation in oxygen annealed β-Ga2O3. United States: N. p., 2021.
Web. doi:10.1063/5.0053325.
Jesenovec, Jani, Weber, Marc H., Pansegrau, Christopher, McCluskey, Matthew D., Lynn, Kelvin G., & McCloy, John S. Gallium vacancy formation in oxygen annealed β-Ga2O3. United States. https://doi.org/10.1063/5.0053325
Jesenovec, Jani, Weber, Marc H., Pansegrau, Christopher, McCluskey, Matthew D., Lynn, Kelvin G., and McCloy, John S. Wed .
"Gallium vacancy formation in oxygen annealed β-Ga2O3". United States. https://doi.org/10.1063/5.0053325. https://www.osti.gov/servlets/purl/1829318.
@article{osti_1829318,
title = {Gallium vacancy formation in oxygen annealed β-Ga2O3},
author = {Jesenovec, Jani and Weber, Marc H. and Pansegrau, Christopher and McCluskey, Matthew D. and Lynn, Kelvin G. and McCloy, John S.},
abstractNote = {Here, the formation and character of gallium vacancies (VGa) and their complexes in near surface and bulk regions of single crystal β-Ga2O3 were explored using unintentionally doped single crystals grown by the Czochralski method. As-grown and O2 annealed (up to 1550 °C) samples were investigated using positron annihilation spectroscopy (PAS) to study the top 0.05–6 μm, and also current–voltage measurements and infrared (IR) spectroscopy, with hydrogenated samples to probe VGa, to study the bulk. After annealing in O2 > 1000 °C, the β-Ga2O3 resistivity begins increasing, up to ~109 Ω cm for 1550 °C treatment, with the top 0.5 mm being many orders of magnitude more resistive. PAS measurements of the top 6 μm (S values) and very near surface 200 nm (diffusion length, L) indicate differential behavior as a function of peak annealing temperature. At least four temperature regimes of behavior are described. VGa are present in the bulk after growth, but considerable changes occur upon annealing at a temperature ≈1000 °C, where L and S decrease simultaneously, suggesting an increasing defect concentration (L) but a decreasing defect volume (S). Annealing at a temperature ≈1400 °C increases S again, showing an increasing volume concentration of VGa, with IR absorption showing a large signature of VGa-2H, indicative of increased VGa formation that was not present when annealing at a temperature ≈1000 °C. These results suggest that defect changes from annealing in oxygen are depth dependent, and that VGa configuration may not be the same near the oxygen-exposed surface of the sample and in the bulk.},
doi = {10.1063/5.0053325},
journal = {Journal of Applied Physics},
number = 24,
volume = 129,
place = {United States},
year = {Wed Jun 23 00:00:00 EDT 2021},
month = {Wed Jun 23 00:00:00 EDT 2021}
}
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