Search Menu
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information
Search Scholarly Publications

Title: High-resolution planar electron beam induced current in bulk diodes using high-energy electrons

Abstract

Understanding the impact of high-energy electron radiation on device characteristics remains critical for the expanding use of semiconductor electronics in space-borne applications and other radiation harsh environments. Here in this paper, we report on in situ measurements of high-energy electron radiation effects on the hole diffusion length in low threading dislocation density homoepitaxial bulk n-GaN Schottky diodes using electron beam induced current (EBIC) in high-voltage scanning electron microscopy mode. Despite the large interaction volume in this system, quantitative EBIC imaging is possible due to the sustained collimation of the incident electron beam. This approach enables direct measurement of electron radiation effects without having to thin the specimen. Using a combination of experimental EBIC measurements and Monte Carlo simulations of electron trajectories, we determine a hole diffusion length of 264 ± 11 nm for n-GaN. Irradiation with 200 kV electron beam with an accumulated dose of 24 × 1016 electrons cm-2 led to an approximate 35% decrease in the minority carrier diffusion length.

Authors:
ORCiD logo [1];  [2]; ORCiD logo [2]; ORCiD logo [3];  [1]
+ Show Author Affiliations
  1. Univ. of Maryland, College Park, MD (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  3. Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Laboratories, SNL California
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Advanced Research Projects Agency - Energy (ARPA-E); National Science Foundation (NSF); National Institute of Standards and Technology (NIST)
OSTI Identifier:
1810363
Alternate Identifier(s):
OSTI ID: 1806243
Report Number(s):
SAND-2021-8154J
Journal ID: ISSN 0003-6951; 697214; TRN: US2213029
Grant/Contract Number:  
AC04-94AL85000; SC0001160; NA0003525; 70NANB15H218; DESC0001160; 16/CJ000/10/04
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 119; Journal Issue: 1; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS

Citation Formats

Warecki, Zoey, Allerman, Andrew A., Armstrong, Andrew M., Talin, A. Alec, and Cumings, John. High-resolution planar electron beam induced current in bulk diodes using high-energy electrons. United States: N. p., 2021. Web. doi:10.1063/5.0051352.
Copy to clipboard
Warecki, Zoey, Allerman, Andrew A., Armstrong, Andrew M., Talin, A. Alec, & Cumings, John. High-resolution planar electron beam induced current in bulk diodes using high-energy electrons. United States. https://doi.org/10.1063/5.0051352
Copy to clipboard
Warecki, Zoey, Allerman, Andrew A., Armstrong, Andrew M., Talin, A. Alec, and Cumings, John. Wed . "High-resolution planar electron beam induced current in bulk diodes using high-energy electrons". United States. https://doi.org/10.1063/5.0051352. https://www.osti.gov/servlets/purl/1810363.
Copy to clipboard
@article{osti_1810363,
title = {High-resolution planar electron beam induced current in bulk diodes using high-energy electrons},
author = {Warecki, Zoey and Allerman, Andrew A. and Armstrong, Andrew M. and Talin, A. Alec and Cumings, John},
abstractNote = {Understanding the impact of high-energy electron radiation on device characteristics remains critical for the expanding use of semiconductor electronics in space-borne applications and other radiation harsh environments. Here in this paper, we report on in situ measurements of high-energy electron radiation effects on the hole diffusion length in low threading dislocation density homoepitaxial bulk n-GaN Schottky diodes using electron beam induced current (EBIC) in high-voltage scanning electron microscopy mode. Despite the large interaction volume in this system, quantitative EBIC imaging is possible due to the sustained collimation of the incident electron beam. This approach enables direct measurement of electron radiation effects without having to thin the specimen. Using a combination of experimental EBIC measurements and Monte Carlo simulations of electron trajectories, we determine a hole diffusion length of 264 ± 11 nm for n-GaN. Irradiation with 200 kV electron beam with an accumulated dose of 24 × 1016 electrons cm-2 led to an approximate 35% decrease in the minority carrier diffusion length.},
doi = {10.1063/5.0051352},
journal = {Applied Physics Letters},
number = 1,
volume = 119,
place = {United States},
year = {Wed Jul 07 00:00:00 EDT 2021},
month = {Wed Jul 07 00:00:00 EDT 2021}
}
Copy to clipboard
Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1063/5.0051352
Copyright Statement
Other availability
Search WorldCat Search WorldCat to find libraries that may hold this journal
Save / Share:
Export Metadata
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.

Works referenced in this record:

Charge collection scanning electron microscopy
journal, June 1982

  • Leamy, H. J.
  • Journal of Applied Physics, Vol. 53, Issue 6
  • DOI: 10.1063/1.331667

Defect and field-enhancement characterization through electron-beam-induced current analysis
journal, May 2017

  • Umezawa, Hitoshi; Gima, Hiroki; Driche, Khaled
  • Applied Physics Letters, Vol. 110, Issue 18
  • DOI: 10.1063/1.4982590

On the use of Monte Carlo modeling in the mathematical analysis of scanning electron microscopy–electron beam induced current data
journal, November 2006

  • Parish, C. M.; Russell, P. E.
  • Applied Physics Letters, Vol. 89, Issue 19
  • DOI: 10.1063/1.2385212

An empirical model of the high-energy electron environment at Jupiter: GIRE2 JOVIAN RADIATION MODEL
journal, October 2016

  • de Soria-Santacruz, M.; Garrett, H. B.; Evans, R. W.
  • Journal of Geophysical Research: Space Physics, Vol. 121, Issue 10
  • DOI: 10.1002/2016JA023059

What is the real value of diffusion length in GaN?
journal, April 2015

Radiation hardness of gallium nitride
journal, December 2002

  • Ionascut-Nedelcescu, A.; Carlone, C.; Houdayer, A.
  • IEEE Transactions on Nuclear Science, Vol. 49, Issue 6
  • DOI: 10.1109/TNS.2002.805363

Probe current determination in analytical TEM/STEM and its application to the characterization of large area EDS detectors: PROBE CURRENT DETERMINATION IN ANALYTICAL TEM/STEM
journal, August 2015

  • Mitchell, David R. G.; Nancarrow, Mitchell J. B.
  • Microscopy Research and Technique, Vol. 78, Issue 10
  • DOI: 10.1002/jemt.22551

Diffusion length measurements in GaN
journal, April 2016

Choice of Generation Volume Models for Electron Beam Induced Current Computation
journal, May 2009

  • Kurniawan, Oka; Ong, Vincent K. S.
  • IEEE Transactions on Electron Devices, Vol. 56, Issue 5
  • DOI: 10.1109/TED.2009.2015159

Penetration and energy-loss theory of electrons in solid targets
journal, January 1972

Direct measurement of electron beam induced currents in p-type silicon
journal, August 2010

Short-range and long-range scattering in electron beam lithography
journal, May 1993

A SEM-EBIC minority-carrier diffusion-length measurement technique
journal, March 1982

  • Ioannou, D. E.; Dimitriadis, C. A.
  • IEEE Transactions on Electron Devices, Vol. 29, Issue 3
  • DOI: 10.1109/T-ED.1982.20721

Depletion region surface effects in electron beam induced current measurements
journal, September 2016

  • Haney, Paul M.; Yoon, Heayoung P.; Gaury, Benoit
  • Journal of Applied Physics, Vol. 120, Issue 9
  • DOI: 10.1063/1.4962016

Corrections to proximity effects in electron beam lithography. I. Theory
journal, June 1979

  • Parikh, Mihir
  • Journal of Applied Physics, Vol. 50, Issue 6
  • DOI: 10.1063/1.326423

Numerical simulation of cross section electron-beam induced current in thin-film solar-cells for low and high injection conditions
journal, October 2013

  • Nichterwitz, Melanie; Unold, Thomas
  • Journal of Applied Physics, Vol. 114, Issue 13
  • DOI: 10.1063/1.4823519

Diffusion length of non-equilibrium minority charge carriers in β-Ga 2 O 3 measured by electron beam induced current
journal, May 2018

  • Yakimov, E. B.; Polyakov, A. Y.; Smirnov, N. B.
  • Journal of Applied Physics, Vol. 123, Issue 18
  • DOI: 10.1063/1.5027559

Review—Ionizing Radiation Damage Effects on GaN Devices
journal, November 2015

  • Pearton, S. J.; Ren, F.; Patrick, Erin
  • ECS Journal of Solid State Science and Technology, Vol. 5, Issue 2
  • DOI: 10.1149/2.0251602jss

Determination of Kilovolt Electron Energy Dissipation vs Penetration Distance in Solid Materials
journal, December 1971

  • Everhart, T. E.; Hoff, P. H.
  • Journal of Applied Physics, Vol. 42, Issue 13
  • DOI: 10.1063/1.1660019

Theory of life time measurements with the scanning electron microscope: Steady state
journal, June 1976

CASINO: A new monte Carlo code in C language for electron beam interactions-part III: Stopping power at low energies
journal, January 1997

  • Hovington, Pierre; Drouin, Dominique; Gauvin, Raynald
  • Scanning, Vol. 19, Issue 1
  • DOI: 10.1002/sca.4950190104

CASINO Monte Carlo simulations of Scanning Transmission Electron Microscopy
journal, July 2010

  • Demers, H.; Poirier-Demers, N.; de Jonge, N.
  • Microscopy and Microanalysis, Vol. 16, Issue S2
  • DOI: 10.1017/S1431927610059490

Electron beam induced current in the high injection regime
journal, July 2015

STEM electron beam-induced current measurements of organic-inorganic perovskite solar cells
journal, October 2020

Proton irradiation effects on minority carrier diffusion length and defect introduction in homoepitaxial and heteroepitaxial n-GaN
journal, December 2017

  • Collins, K. C.; Armstrong, A. M.; Allerman, A. A.
  • Journal of Applied Physics, Vol. 122, Issue 23
  • DOI: 10.1063/1.5006814

The space radiation environment for electronics
journal, January 1988

  • Stassinopoulos, E. G.; Raymond, J. P.
  • Proceedings of the IEEE, Vol. 76, Issue 11
  • DOI: 10.1109/5.90113

Energy deposition functions in electron resist films on substrates
journal, February 1979

  • Parikh, Mihir; Kyser, David F.
  • Journal of Applied Physics, Vol. 50, Issue 2
  • DOI: 10.1063/1.326088

Depletion region geometry analysis applied to single event sensitivity
journal, December 1989

  • Langworthy, J. B.
  • IEEE Transactions on Nuclear Science, Vol. 36, Issue 6
  • DOI: 10.1109/23.45460
    Sort by:
    [ × clear filter / sort ]

    Similar Records in DOE PAGES and OSTI.GOV collections: