Improved lifetime of a high spin polarization superlattice photocathode

Bae, Jai Kwan; Galdi, Alice; Cultrera, Luca; Ikponmwen, Frank; Maxson, Jared; Bazarov, Ivan

doi:10.1063/1.5139674

Title: Improved lifetime of a high spin polarization superlattice photocathode

Abstract

Negative Electron Affinity (NEA) activated surfaces are required to extract highly spin-polarized electron beams from GaAs-based photocathodes, but they suffer extreme sensitivity to poor vacuum conditions that results in rapid degradation of quantum efficiency. We report on a series of unconventional NEA activations on surfaces of bulk GaAs with Cs, Sb, and O₂ using different methods of oxygen exposure for optimizing photocathode performance. Additionally, one order of magnitude improvement in lifetime with respect to the standard Cs–O₂ activation is achieved without significant loss of electron spin polarization and quantum efficiency by codepositing Cs, Sb, and O₂. A strained GaAs/GaAsP superlattice sample activated with the codeposition method demonstrated similar enhancement in lifetime near the photoemission threshold while maintaining 90% spin polarization.

Authors:

^[1];

^[1]; Ikponmwen, Frank ^[1]; Maxson, Jared ^[1]; Bazarov, Ivan ^[1]

Cornell Univ., Ithaca, NY (United States). Cornell Lab. for Accelerator-Based Sciences and Education

Publication Date:: Tue Mar 31 00:00:00 EDT 2020

Research Org.:: Cornell Univ., Ithaca, NY (United States)

Sponsoring Org.:: USDOE Office of Science (SC); National Science Foundation (NSF)

OSTI Identifier:: 1803572

Alternate Identifier(s):: OSTI ID: 1605951

Grant/Contract Number:: SC0019122; PHY-1549132

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 127; Journal Issue: 12; Journal ID: ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Physics; Photoexcitations; Electron beams; Codeposition; Superlattices; Photoelectric effect; Quantum efficiency; Spintronics; Photocathodes; Potential energy barrier

Citation Formats


                    Bae, Jai Kwan, Galdi, Alice, Cultrera, Luca, Ikponmwen, Frank, Maxson, Jared, and Bazarov, Ivan. Improved lifetime of a high spin polarization superlattice photocathode.  United States: N. p., 2020. 
Web.  doi:10.1063/1.5139674.

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                    Bae, Jai Kwan, Galdi, Alice, Cultrera, Luca, Ikponmwen, Frank, Maxson, Jared, & Bazarov, Ivan. Improved lifetime of a high spin polarization superlattice photocathode.  United States.  https://doi.org/10.1063/1.5139674

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                    Bae, Jai Kwan, Galdi, Alice, Cultrera, Luca, Ikponmwen, Frank, Maxson, Jared, and Bazarov, Ivan. Tue .  
"Improved lifetime of a high spin polarization superlattice photocathode".  United States.  https://doi.org/10.1063/1.5139674.  https://www.osti.gov/servlets/purl/1803572.

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@article{osti_1803572,

  title        = {Improved lifetime of a high spin polarization superlattice photocathode},

  author       = {Bae, Jai Kwan and Galdi, Alice and Cultrera, Luca and Ikponmwen, Frank and Maxson, Jared and Bazarov, Ivan},

  abstractNote = {Negative Electron Affinity (NEA) activated surfaces are required to extract highly spin-polarized electron beams from GaAs-based photocathodes, but they suffer extreme sensitivity to poor vacuum conditions that results in rapid degradation of quantum efficiency. We report on a series of unconventional NEA activations on surfaces of bulk GaAs with Cs, Sb, and O2 using different methods of oxygen exposure for optimizing photocathode performance. Additionally, one order of magnitude improvement in lifetime with respect to the standard Cs–O2 activation is achieved without significant loss of electron spin polarization and quantum efficiency by codepositing Cs, Sb, and O2. A strained GaAs/GaAsP superlattice sample activated with the codeposition method demonstrated similar enhancement in lifetime near the photoemission threshold while maintaining 90% spin polarization.},

  doi          = {10.1063/1.5139674},

  journal      = {Journal of Applied Physics},

  number       = 12,

  volume       = 127,

  place        = {United States},

  year         = {Tue Mar 31 00:00:00 EDT 2020},

  month        = {Tue Mar 31 00:00:00 EDT 2020}

}

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Title: Improved lifetime of a high spin polarization superlattice photocathode

Abstract

Citation Formats

Characterization of wet-etched GaAs (100) surfaces journal, January 2005

Electron-spin polarization in photoemission from strained GaAs grown on GaAs 1 − x P x journal, August 1992

Behavior of Cesium Oxide as a Low Work‐Function Coating journal, October 1970

Search for spin-polarized photoemission from GaAs using light with orbital angular momentum journal, January 2013

Interaction of Cesium-Potassium Antimonide Photocathode Materials with Oxygen: an X-Ray Photoelectron Spectroscopy Study journal, October 1993

A test system for optimizing quantum efficiency and dark lifetime of GaAs photocathodes journal, August 2019

Low‐Work‐Function Surfaces for Negative‐Electron‐Affinity Photoemitters journal, May 1969

Alkali azide based growth of high quantum efficiency photocathodes journal, May 2014

Thickness of Cs‐Sb Films Relative to the Original Sb Films journal, September 1966

Long lifetime polarized electron beam production from negative electron affinity GaAs activated with Sb-Cs-O: Trade-offs between efficiency, spin polarization, and lifetime journal, February 2020

Photocathode behavior during high current running in the Cornell energy recovery linac photoinjector journal, December 2011

Systematic study of polarized electron emission from strained GaAs∕GaAsP superlattice photocathodes journal, September 2004

Optimized chemical cleaning procedure for enhancing photoemission from GaAs photocathode journal, March 2019

Photoemission of spin-polarized electrons from GaAs journal, June 1976

Measurement of electron beam polarization from unstrained GaAs via two-photon photoemission journal, February 2014

Enhanced chemical immunity for negative electron affinity GaAs photoemitters journal, September 2008

Photoelectron surface escape probability of (Ga,In)As : Cs–O in the 0.9 to [inverted lazy s] 1.6 μm range journal, September 1972

Comparative study of the preparation of negative electron affinity GaAs photocathodes with O 2 and with NF 3 journal, November 1991

Dark-lifetime degradation of GaAs photo-cathode at higher temperature journal, May 2011

A study of an electron affinity of cesium telluride thin film journal, May 2011

30-kV spin-polarized transmission electron microscope with GaAs–GaAsP strained superlattice photocathode journal, July 2012

Study of GaAs-Cs-Sb photoemitter conference, April 1993

Charge and fluence lifetime measurements of a dc high voltage GaAs photogun at high average current journal, April 2011

The degradation of quantum efficiency in negative electron affinity GaAs photocathodes under gas exposure journal, January 2014

Photoemission from GaAs-Cs-Sb (Te) journal, January 1969

Rugged spin-polarized electron sources based on negative electron affinity GaAs photocathode with robust Cs 2 Te coating journal, April 2018

Charge lifetime measurements at high average current using a K 2 CsSb photocathode inside a dc high voltage photogun journal, March 2013

Novel GaAs photocathodes with alkali antimonide intermediate layers and caesium-oxygen adlayers journal, August 1996

p-GaAs(Cs,O)-photocathodes: Demarcation of domains of validity for practical models of the activation layer journal, May 2015

On Photoemission from GaAs–Cs–Sb journal, June 1969

Photoelectron spectroscopic determination of the structure of (Cs,O) activated GaAs (110) surfaces journal, March 1983

Increasing charge lifetime in dc polarized electron guns by offsetting the anode journal, August 2019

A comprehensive evaluation of factors that influence the spin polarization of electrons emitted from bulk GaAs photocathodes journal, July 2017

The surface activation layer of GaAs negative electron affinity photocathode activated by Cs, Li, and NF3 journal, October 2009

Real Time Magnetic Imaging by Spin-Polarized Low Energy Electron Microscopy with Highly Spin-Polarized and High Brightness Electron Gun journal, January 2010

Spin-Polarized Electron Energy Loss Spectroscopy of High Energy, Large Wave Vector Spin Waves in Ultrathin fcc Co Films on Cu(001) journal, September 2003

Improved quantum efficiency and stability of GaAs photocathode using favorable illumination during activation journal, July 2019

X‐ray photoemission studies of superficially oxidized cesium antimonide photoemitters journal, March 1981

Monte Carlo charge transport and photoemission from negative electron affinity GaAs photocathodes journal, March 2013

Quantum efficiency and thermal emittance of metal photocathodes journal, July 2009

Record-level quantum efficiency from a high polarization strained GaAs/GaAsP superlattice photocathode with distributed Bragg reflector journal, December 2016

GaAs-Cs: A new type of photoemitter journal, August 1965

Calculated electron energy distribution of negative electron affinity cathodes journal, August 1999

Low energy electron microscopy and Auger electron spectroscopy studies of Cs-O activation layer on p-type GaAs photocathode journal, November 2014

Characterization of wet-etched GaAs (100) surfaces
journal, January 2005

Electron-spin polarization in photoemission from strained GaAs grown on ${GaAs}_{1 - x}$ $P_{x}$
journal, August 1992

Behavior of Cesium Oxide as a Low Work‐Function Coating
journal, October 1970

Search for spin-polarized photoemission from GaAs using light with orbital angular momentum
journal, January 2013

Interaction of Cesium-Potassium Antimonide Photocathode Materials with Oxygen: an X-Ray Photoelectron Spectroscopy Study
journal, October 1993

A test system for optimizing quantum efficiency and dark lifetime of GaAs photocathodes
journal, August 2019

Low‐Work‐Function Surfaces for Negative‐Electron‐Affinity Photoemitters
journal, May 1969

Alkali azide based growth of high quantum efficiency photocathodes
journal, May 2014

Thickness of Cs‐Sb Films Relative to the Original Sb Films
journal, September 1966

Long lifetime polarized electron beam production from negative electron affinity GaAs activated with Sb-Cs-O: Trade-offs between efficiency, spin polarization, and lifetime
journal, February 2020

Photocathode behavior during high current running in the Cornell energy recovery linac photoinjector
journal, December 2011

Systematic study of polarized electron emission from strained GaAs∕GaAsP superlattice photocathodes
journal, September 2004

Optimized chemical cleaning procedure for enhancing photoemission from GaAs photocathode
journal, March 2019

Photoemission of spin-polarized electrons from GaAs
journal, June 1976

Measurement of electron beam polarization from unstrained GaAs via two-photon photoemission
journal, February 2014

Enhanced chemical immunity for negative electron affinity GaAs photoemitters
journal, September 2008

Photoelectron surface escape probability of (Ga,In)As : Cs–O in the 0.9 to [inverted lazy s] 1.6 μm range
journal, September 1972

Comparative study of the preparation of negative electron affinity GaAs photocathodes with O ₂ and with NF ₃
journal, November 1991

Dark-lifetime degradation of GaAs photo-cathode at higher temperature
journal, May 2011

A study of an electron affinity of cesium telluride thin film
journal, May 2011

30-kV spin-polarized transmission electron microscope with GaAs–GaAsP strained superlattice photocathode
journal, July 2012

Study of GaAs-Cs-Sb photoemitter
conference, April 1993

Charge and fluence lifetime measurements of a dc high voltage GaAs photogun at high average current
journal, April 2011

The degradation of quantum efficiency in negative electron affinity GaAs photocathodes under gas exposure
journal, January 2014

Photoemission from GaAs-Cs-Sb (Te)
journal, January 1969

Rugged spin-polarized electron sources based on negative electron affinity GaAs photocathode with robust Cs ₂ Te coating
journal, April 2018

Charge lifetime measurements at high average current using a $K_{2} CsSb$ photocathode inside a dc high voltage photogun
journal, March 2013

Novel GaAs photocathodes with alkali antimonide intermediate layers and caesium-oxygen adlayers
journal, August 1996

p-GaAs(Cs,O)-photocathodes: Demarcation of domains of validity for practical models of the activation layer
journal, May 2015

On Photoemission from GaAs–Cs–Sb
journal, June 1969

Photoelectron spectroscopic determination of the structure of (Cs,O) activated GaAs (110) surfaces
journal, March 1983

Increasing charge lifetime in dc polarized electron guns by offsetting the anode
journal, August 2019

A comprehensive evaluation of factors that influence the spin polarization of electrons emitted from bulk GaAs photocathodes
journal, July 2017

The surface activation layer of GaAs negative electron affinity photocathode activated by Cs, Li, and NF3
journal, October 2009

Real Time Magnetic Imaging by Spin-Polarized Low Energy Electron Microscopy with Highly Spin-Polarized and High Brightness Electron Gun
journal, January 2010

Spin-Polarized Electron Energy Loss Spectroscopy of High Energy, Large Wave Vector Spin Waves in Ultrathin fcc Co Films on Cu(001)
journal, September 2003

Improved quantum efficiency and stability of GaAs photocathode using favorable illumination during activation
journal, July 2019

X‐ray photoemission studies of superficially oxidized cesium antimonide photoemitters
journal, March 1981

Monte Carlo charge transport and photoemission from negative electron affinity GaAs photocathodes
journal, March 2013

Quantum efficiency and thermal emittance of metal photocathodes
journal, July 2009

Record-level quantum efficiency from a high polarization strained GaAs/GaAsP superlattice photocathode with distributed Bragg reflector
journal, December 2016

GaAs-Cs: A new type of photoemitter
journal, August 1965

Calculated electron energy distribution of negative electron affinity cathodes
journal, August 1999

Low energy electron microscopy and Auger electron spectroscopy studies of Cs-O activation layer on p-type GaAs photocathode
journal, November 2014