Enhancement of the spin–orbit torque efficiency in W/Cu/CoFeB heterostructures via interface engineering
Abstract
Here, the spin-torque ferromagnetic resonance signal and the spin Hall magnetoresistance induced by the spin Hall effect of W/Cu/CoFeB heterostructures with different Cu layer thicknesses (tCu) have been systemically studied. The effective spin mixing conductance $$g^{↑↓}_{eff}$$, the interfacial spin transparency T, and the real spin–orbit torque efficiency show a significant increase compared to the W/CoFeB heterostructure. reaches its maximum of ~0.54, increased up to ~50% at the optimized tCu ~ 0.52 nm according to our theoretical prediction. More importantly, the intrinsic spin Hall angle of W, $$θ^{int}_{SH}$$ ~ 0.79 ± 0.20, has also been obtained after the correction of the inverse spin Hall effect and T. This suggests that the Cu insertion improves the interface quality and, therefore, assists the spin transport in the heterostructures, which potentially improves the performance of next-generation spintronic devices.
- Authors:
-
- Nanjing Univ. (China); Univ. of California, Los Angeles, CA (United States)
- Univ. of California, Los Angeles, CA (United States);The Hong Kong University of Science and Technology (China)
- Univ. of California, Los Angeles, CA (United States) ;Beijing Normal University (China)
- Univ. of California, Los Angeles, CA (United States); Beijing Normal University (China)
- Univ. of California, Los Angeles, CA (United States)
- Nanjing Univ. (China)
- Key Laboratory of Spintronics Materials, Devices and Systems of Zhejiang Province, Zhejiang Province, China (Asia)
- Nanjing Univ. (China); Univ. of York (United Kingdom)
- Publication Date:
- Research Org.:
- Univ. of California, Riverside, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1802452
- Grant/Contract Number:
- SC0012670
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 117; Journal Issue: 8; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS; Physics; Spin pumping; Spintronics; Spin Hall effect; Heterostructures; Spintronic devices; Ferromagnetic resonance
Citation Formats
Yang, Pei, Shao, Qiming, Yu, Guoqiang, He, Congli, Wong, Kin, Lu, Xianyang, Zhang, Junran, Liu, Bo, Meng, Hao, He, Liang, Wang, Kang L., and Xu, Yongbing. Enhancement of the spin–orbit torque efficiency in W/Cu/CoFeB heterostructures via interface engineering. United States: N. p., 2020.
Web. doi:10.1063/5.0015557.
Yang, Pei, Shao, Qiming, Yu, Guoqiang, He, Congli, Wong, Kin, Lu, Xianyang, Zhang, Junran, Liu, Bo, Meng, Hao, He, Liang, Wang, Kang L., & Xu, Yongbing. Enhancement of the spin–orbit torque efficiency in W/Cu/CoFeB heterostructures via interface engineering. United States. https://doi.org/10.1063/5.0015557
Yang, Pei, Shao, Qiming, Yu, Guoqiang, He, Congli, Wong, Kin, Lu, Xianyang, Zhang, Junran, Liu, Bo, Meng, Hao, He, Liang, Wang, Kang L., and Xu, Yongbing. Mon .
"Enhancement of the spin–orbit torque efficiency in W/Cu/CoFeB heterostructures via interface engineering". United States. https://doi.org/10.1063/5.0015557. https://www.osti.gov/servlets/purl/1802452.
@article{osti_1802452,
title = {Enhancement of the spin–orbit torque efficiency in W/Cu/CoFeB heterostructures via interface engineering},
author = {Yang, Pei and Shao, Qiming and Yu, Guoqiang and He, Congli and Wong, Kin and Lu, Xianyang and Zhang, Junran and Liu, Bo and Meng, Hao and He, Liang and Wang, Kang L. and Xu, Yongbing},
abstractNote = {Here, the spin-torque ferromagnetic resonance signal and the spin Hall magnetoresistance induced by the spin Hall effect of W/Cu/CoFeB heterostructures with different Cu layer thicknesses (tCu) have been systemically studied. The effective spin mixing conductance $g^{↑↓}_{eff}$, the interfacial spin transparency T, and the real spin–orbit torque efficiency ( J s J c ) real show a significant increase compared to the W/CoFeB heterostructure. ( J s J c ) real reaches its maximum of ~0.54, increased up to ~50% at the optimized tCu ~ 0.52 nm according to our theoretical prediction. More importantly, the intrinsic spin Hall angle of W, $θ^{int}_{SH}$ ~ 0.79 ± 0.20, has also been obtained after the correction of the inverse spin Hall effect and T. This suggests that the Cu insertion improves the interface quality and, therefore, assists the spin transport in the heterostructures, which potentially improves the performance of next-generation spintronic devices.},
doi = {10.1063/5.0015557},
journal = {Applied Physics Letters},
number = 8,
volume = 117,
place = {United States},
year = {Mon Aug 24 00:00:00 EDT 2020},
month = {Mon Aug 24 00:00:00 EDT 2020}
}
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