Twinned nanostructure of VO2 thin films grown on r-cut sapphire
Abstract
Due to strong electron-phonon interactions, strain engineering is a powerful tool to control quantum critical phenomena in strongly correlated oxides. Exploring this possibility requires understanding the nanoscale structure of quantum materials and the role it plays in forming the strain landscape. In this work, we used a combination of x-ray nanoimaging and reciprocal space mapping to study the nanostructure of the archetypal Mott insulator VO2 featuring an insulator-to-metal and structural phase transitions. We found that VO2 thin films grown on r-cut sapphire consist of two intertwined crystal lattices, permanently inclined with respect to each other. This persistent pattern of twin domains stands out from the symmetry breaking induced by the structural phase transition and conceivably originates from the post-growth strain relaxation process. We propose a model explaining the formation of twin domains and the emergence of anisotropy in the film nanostructure. Our work suggests using miscut substrates to suppress either one or the other twin that can serve as a new tool to control strain in VO2 films.
- Authors:
-
[1];
[2];
- Univ. of California San Diego, La Jolla, CA (United States)
- Bar Ilan University, Ramat-Gan, IL (Israel)
- Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials
- Publication Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States). Advanced Photon Source (APS) and Center for Nanoscale Materials (CNM); Energy Frontier Research Centers (EFRC) (United States). Quantum Materials for Energy-Efficient Neuromorphic Computing (Q-MEENC)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); Israel Science Foundation (ISF)
- OSTI Identifier:
- 1797973
- Grant/Contract Number:
- AC02-06CH11357; SC0019273; 569/16; SC0001805
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review B
- Additional Journal Information:
- Journal Volume: 102; Journal Issue: 13; Journal ID: ISSN 2469-9950
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Shabalin, Anatoly G., Anouchi, Elihu, Hua, Nelson, Wu, Yimin A., Holt, Martin V., Sharoni, Amos, and Shpyrko, Oleg G. Twinned nanostructure of VO2 thin films grown on r-cut sapphire. United States: N. p., 2020.
Web. doi:10.1103/physrevb.102.134106.
Shabalin, Anatoly G., Anouchi, Elihu, Hua, Nelson, Wu, Yimin A., Holt, Martin V., Sharoni, Amos, & Shpyrko, Oleg G. Twinned nanostructure of VO2 thin films grown on r-cut sapphire. United States. https://doi.org/10.1103/physrevb.102.134106
Shabalin, Anatoly G., Anouchi, Elihu, Hua, Nelson, Wu, Yimin A., Holt, Martin V., Sharoni, Amos, and Shpyrko, Oleg G. Mon .
"Twinned nanostructure of VO2 thin films grown on r-cut sapphire". United States. https://doi.org/10.1103/physrevb.102.134106. https://www.osti.gov/servlets/purl/1797973.
@article{osti_1797973,
title = {Twinned nanostructure of VO2 thin films grown on r-cut sapphire},
author = {Shabalin, Anatoly G. and Anouchi, Elihu and Hua, Nelson and Wu, Yimin A. and Holt, Martin V. and Sharoni, Amos and Shpyrko, Oleg G.},
abstractNote = {Due to strong electron-phonon interactions, strain engineering is a powerful tool to control quantum critical phenomena in strongly correlated oxides. Exploring this possibility requires understanding the nanoscale structure of quantum materials and the role it plays in forming the strain landscape. In this work, we used a combination of x-ray nanoimaging and reciprocal space mapping to study the nanostructure of the archetypal Mott insulator VO2 featuring an insulator-to-metal and structural phase transitions. We found that VO2 thin films grown on r-cut sapphire consist of two intertwined crystal lattices, permanently inclined with respect to each other. This persistent pattern of twin domains stands out from the symmetry breaking induced by the structural phase transition and conceivably originates from the post-growth strain relaxation process. We propose a model explaining the formation of twin domains and the emergence of anisotropy in the film nanostructure. Our work suggests using miscut substrates to suppress either one or the other twin that can serve as a new tool to control strain in VO2 films.},
doi = {10.1103/physrevb.102.134106},
journal = {Physical Review B},
number = 13,
volume = 102,
place = {United States},
year = {Mon Oct 12 00:00:00 EDT 2020},
month = {Mon Oct 12 00:00:00 EDT 2020}
}
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Works referenced in this record:
Recent progress in the phase-transition mechanism and modulation of vanadium dioxide materials
journal, July 2018
- Shao, Zewei; Cao, Xun; Luo, Hongjie
- NPG Asia Materials, Vol. 10, Issue 7
Epitaxial VO 2 Nanostructures: A Route to Large-Scale, Switchable Dielectric Metasurfaces
journal, December 2017
- Ligmajer, Filip; Kejík, Lukáš; Tiwari, Uddhab
- ACS Photonics, Vol. 5, Issue 7
Semiconductor-metal transition characteristics of VO2 thin films grown on c- and r-sapphire substrates
journal, March 2010
- Yang, Tsung-Han; Aggarwal, Ravi; Gupta, Alok
- Journal of Applied Physics, Vol. 107, Issue 5
Ramp-Reversal Memory and Phase-Boundary Scarring in Transition Metal Oxides
journal, March 2017
- Vardi, Naor; Anouchi, Elihu; Yamin, Tony
- Advanced Materials, Vol. 29, Issue 21
VO2 thermochromic smart window for energy savings and generation
journal, October 2013
- Zhou, Jiadong; Gao, Yanfeng; Zhang, Zongtao
- Scientific Reports, Vol. 3, Issue 1
Anisotropic infrared response of vanadium dioxide microcrystals
journal, March 2013
- Huffman, T. J.; Xu, Peng; Qazilbash, M. M.
- Physical Review B, Vol. 87, Issue 11
Effect of oxygen stoichiometry on the insulator-metal phase transition in vanadium oxide thin films studied using optical pump-terahertz probe spectroscopy
journal, October 2013
- Liu, H. W.; Wong, L. M.; Wang, S. J.
- Applied Physics Letters, Vol. 103, Issue 15
The metal-insulator transitions of VO2: A band theoretical approach
journal, October 2002
- Eyert, V.
- Annalen der Physik, Vol. 11, Issue 9
Transport Anisotropy of Epitaxial VO$_{2}$ Films near the Metal–Semiconductor Transition
journal, August 2011
- Kittiwatanakul, Salinporn; Lu, Jiwei; Wolf, Stuart A.
- Applied Physics Express, Vol. 4, Issue 9
Suspended sub-50 nm vanadium dioxide membrane transistors: fabrication and ionic liquid gating studies
journal, January 2012
- Sim, Jai S.; Zhou, You; Ramanathan, Shriram
- Nanoscale, Vol. 4, Issue 22
Enhanced Metal–Insulator Transition Performance in Scalable Vanadium Dioxide Thin Films Prepared Using a Moisture-Assisted Chemical Solution Approach
journal, January 2018
- Liang, Weizheng; Gao, Min; Lu, Chang
- ACS Applied Materials & Interfaces, Vol. 10, Issue 9
Optical switching of a metamaterial by temperature controlling
journal, June 2010
- Huang, Wan-xia; Yin, Xiao-gang; Huang, Cheng-ping
- Applied Physics Letters, Vol. 96, Issue 26
Suppression of Metal-Insulator Transition in VO2 by Electric Field-Induced Oxygen Vacancy Formation
journal, March 2013
- Jeong, J.; Aetukuri, N.; Graf, T.
- Science, Vol. 339, Issue 6126
Significant change in optical and thermochromic properties for VO 2 films post-treated by low-energy argon ions
journal, January 2019
- Zhu, Maodong; Wang, Hu; Qi, Hongji
- Optical Materials Express, Vol. 9, Issue 4
Current-induced electrical self-oscillations across out-of-plane threshold switches based on VO 2 layers integrated in crossbars geometry
journal, April 2014
- Beaumont, A.; Leroy, J.; Orlianges, J. -C.
- Journal of Applied Physics, Vol. 115, Issue 15
Influence of grain size on transition temperature of thermochromic VO 2
journal, January 2015
- Miller, Mark J.; Wang, Junlan
- Journal of Applied Physics, Vol. 117, Issue 3
Structural, electrical, and terahertz transmission properties of VO 2 thin films grown on c-, r-, and m-plane sapphire substrates
journal, March 2012
- Zhao, Yong; Hwan Lee, Joon; Zhu, Yanhan
- Journal of Applied Physics, Vol. 111, Issue 5
Role of Defects in the Phase Transition of VO 2 Nanoparticles Probed by Plasmon Resonance Spectroscopy
journal, January 2012
- Appavoo, Kannatassen; Lei, Dang Yuan; Sonnefraud, Yannick
- Nano Letters, Vol. 12, Issue 2
Nanoimaging of Electrical Failure in VO 2 Resistive-Switching Nanodevices
journal, August 2020
- Shabalin, Anatoly G.; del Valle, Javier; Charnukha, Aliaksei
- ACS Applied Electronic Materials, Vol. 2, Issue 8
Stress relaxation effect on transport properties of strained vanadium dioxide epitaxial thin films
journal, November 2006
- Nagashima, Kazuki; Yanagida, Takeshi; Tanaka, Hidekazu
- Physical Review B, Vol. 74, Issue 17
Role of thermal strain in the metal-insulator and structural phase transition of epitaxial films
journal, May 2016
- Théry, V.; Boulle, A.; Crunteanu, A.
- Physical Review B, Vol. 93, Issue 18
Memory Metamaterials
journal, August 2009
- Driscoll, T.; Kim, H. -T.; Chae, B. -G.
- Science, Vol. 325, Issue 5947
Recent progresses on physics and applications of vanadium dioxide
journal, October 2018
- Liu, Kai; Lee, Sangwook; Yang, Shan
- Materials Today, Vol. 21, Issue 8
Ultrathin Films of VO 2 on r-Cut Sapphire Achieved by Postdeposition Etching
journal, May 2016
- Yamin, Tony; Wissberg, Shai; Cohen, Hagai
- ACS Applied Materials & Interfaces, Vol. 8, Issue 23
Giant nonvolatile resistive switching in a Mott oxide and ferroelectric hybrid
journal, April 2019
- Salev, Pavel; del Valle, Javier; Kalcheim, Yoav
- Proceedings of the National Academy of Sciences, Vol. 116, Issue 18
Oxide Electronics Utilizing Ultrafast Metal-Insulator Transitions
journal, August 2011
- Yang, Zheng; Ko, Changhyun; Ramanathan, Shriram
- Annual Review of Materials Research, Vol. 41, Issue 1
Subthreshold firing in Mott nanodevices
journal, May 2019
- del Valle, Javier; Salev, Pavel; Tesler, Federico
- Nature, Vol. 569, Issue 7756
Isostructural metal-insulator transition in VO 2
journal, November 2018
- Lee, D.; Chung, B.; Shi, Y.
- Science, Vol. 362, Issue 6418
Thickness-dependent metal-to-insulator transition in epitaxial VO 2 films
journal, October 2014
- Zhi, Bowen; Gao, Guanyin; Tan, Xuelian
- Materials Research Express, Vol. 1, Issue 4