Ultraviolet to far-infrared dielectric function of n -doped cadmium oxide thin films
Abstract
Spectroscopic ellipsometry and Fourier transform infrared spectroscopy were applied to extract the ultraviolet to far-infrared (150 – 33333 cm-1) complex dielectric functions of high-quality, sputtered indium-doped cadmium oxide (In:CdO) thin crystalline films on MgO substrates possessing carrier densities (Nd) ranging from 1.1 x 1019 cm-1 to 4.1 x 1020 cm-1. A multiple oscillator fit model was used to identify and analyze the three major contributors to the dielectric function and their dependence on doping density: interband transitions in the visible, free-carrier excitations (Drude response) in the near- to far-infrared, and IR-active optic phonons in the far-infrared. More specifically, values pertinent to the complex dielectric function such as the optical band gap (Eg), are shown here to be dependent upon carrier density, increasing from approximately 2.5–3 eV, while the high-frequency permittivity (ε∞) decreases from 5.6 to 5.1 with increasing carrier density. The plasma frequency (ωp) scales as $$\sqrt{N_d}$$, resulting in ωp values occurring within the mid- to near-IR, and the effective mass (m *) was also observed to exhibit doping density-dependent changes, reaching a minimum of 0.11 mo in unintentionally doped films (1.1 x 1019 cm-1). Good quantitative agreement with prior work on polycrystalline, higher-doped CdO films is also demonstrated, illustrating the generality of the results. The analysis presented here in this paper will aid in predictive calculations for CdO-based next-generation nanophotonic and optoelectronic devices, while also providing an underlying physical description of the key properties dictating the dielectric response in this atypical semiconductor system.
- Authors:
-
[1];
[2];
[1];
[1]
- Vanderbilt Univ., Nashville, TN (United States)
- North Carolina State Univ., Raleigh, NC (United States); Army Research Office, Research Triangle Park, NC (United States). CDCC US Army Research Lab.
- North Carolina State Univ., Raleigh, NC (United States)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies
- Pennsylvania State Univ., University Park, PA (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1770365
- Alternate Identifier(s):
- OSTI ID: 1602354
- Report Number(s):
- SAND-2021-2471J
Journal ID: ISSN 2475-9953; 694448; TRN: US2206821
- Grant/Contract Number:
- AC04-94AL85000
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review Materials
- Additional Journal Information:
- Journal Volume: 4; Journal Issue: 2; Journal ID: ISSN 2475-9953
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Nolen, J. Ryan, Runnerstrom, Evan L., Kelley, Kyle P., Luk, Ting S., Folland, Thomas G., Cleri, Angela, Maria, Jon-Paul, and Caldwell, Joshua D. Ultraviolet to far-infrared dielectric function of n -doped cadmium oxide thin films. United States: N. p., 2020.
Web. doi:10.1103/physrevmaterials.4.025202.
Nolen, J. Ryan, Runnerstrom, Evan L., Kelley, Kyle P., Luk, Ting S., Folland, Thomas G., Cleri, Angela, Maria, Jon-Paul, & Caldwell, Joshua D. Ultraviolet to far-infrared dielectric function of n -doped cadmium oxide thin films. United States. https://doi.org/10.1103/physrevmaterials.4.025202
Nolen, J. Ryan, Runnerstrom, Evan L., Kelley, Kyle P., Luk, Ting S., Folland, Thomas G., Cleri, Angela, Maria, Jon-Paul, and Caldwell, Joshua D. Fri .
"Ultraviolet to far-infrared dielectric function of n -doped cadmium oxide thin films". United States. https://doi.org/10.1103/physrevmaterials.4.025202. https://www.osti.gov/servlets/purl/1770365.
@article{osti_1770365,
title = {Ultraviolet to far-infrared dielectric function of n -doped cadmium oxide thin films},
author = {Nolen, J. Ryan and Runnerstrom, Evan L. and Kelley, Kyle P. and Luk, Ting S. and Folland, Thomas G. and Cleri, Angela and Maria, Jon-Paul and Caldwell, Joshua D.},
abstractNote = {Spectroscopic ellipsometry and Fourier transform infrared spectroscopy were applied to extract the ultraviolet to far-infrared (150 – 33333 cm-1) complex dielectric functions of high-quality, sputtered indium-doped cadmium oxide (In:CdO) thin crystalline films on MgO substrates possessing carrier densities (Nd) ranging from 1.1 x 1019 cm-1 to 4.1 x 1020 cm-1. A multiple oscillator fit model was used to identify and analyze the three major contributors to the dielectric function and their dependence on doping density: interband transitions in the visible, free-carrier excitations (Drude response) in the near- to far-infrared, and IR-active optic phonons in the far-infrared. More specifically, values pertinent to the complex dielectric function such as the optical band gap (Eg), are shown here to be dependent upon carrier density, increasing from approximately 2.5–3 eV, while the high-frequency permittivity (ε∞) decreases from 5.6 to 5.1 with increasing carrier density. The plasma frequency (ωp) scales as $\sqrt{N_d}$, resulting in ωp values occurring within the mid- to near-IR, and the effective mass (m *) was also observed to exhibit doping density-dependent changes, reaching a minimum of 0.11 mo in unintentionally doped films (1.1 x 1019 cm-1). Good quantitative agreement with prior work on polycrystalline, higher-doped CdO films is also demonstrated, illustrating the generality of the results. The analysis presented here in this paper will aid in predictive calculations for CdO-based next-generation nanophotonic and optoelectronic devices, while also providing an underlying physical description of the key properties dictating the dielectric response in this atypical semiconductor system.},
doi = {10.1103/physrevmaterials.4.025202},
journal = {Physical Review Materials},
number = 2,
volume = 4,
place = {United States},
year = {Fri Feb 28 00:00:00 EST 2020},
month = {Fri Feb 28 00:00:00 EST 2020}
}
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