Direct Nanoscale Characterization of Deep Levels in AgCuInGaSe2 Using Electron Energy–Loss Spectroscopy in the Scanning Transmission Electron Microscope
Abstract
A new experimental framework for the characterization of defects in semiconductors is demonstrated. Through the direct, energy-resolved correlation of three analytical techniques spanning six orders of magnitude in spatial resolution, a critical mid-bandgap electronic trap level (EV + 0.56 eV) within Ag0.2Cu0.8In1–xGaxSe2 is traced to its nanoscale physical location and chemical source. This is achieved through a stepwise, site-specific correlated characterization workflow consisting of device-scale (≈1 mm2) deep level transient spectroscopy (DLTS) to survey the traps present, scanning probe–based DLTS (scanning-DLTS) for mesoscale-resolved (hundreds of nanometers) mapping of the target trap state’s spatial distribution, and scanning transmission electron microscope based electron energy-loss spectroscopy (STEM-EELS) and X-ray energy-dispersive spectroscopy for nanoscale energy-, structure, and chemical-resolved investigation of the defect source. Furthermore, this first demonstration of the direct observation of sub-bandgap defect levels via STEM-EELS, combined with the DLTS methods, provides strong evidence that the longsuspected CuIn/Ga substitutional defects are indeed the most likely source of the EV + 0.56 eV trap state and serves as a key example of this approach for the fundamental identification of defects within semiconductors, in general.
- Authors:
-
[1];
[1]
- The Ohio State Univ., Columbus, OH (United States)
- MiaSolé Hi‐Tech Corp., Santa Clara, CA (United States)
- Publication Date:
- Research Org.:
- Colorado School of Mines, Golden, CO (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- OSTI Identifier:
- 1766327
- Alternate Identifier(s):
- OSTI ID: 1547553
- Grant/Contract Number:
- EE0007141
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Energy Materials
- Additional Journal Information:
- Journal Volume: 9; Journal Issue: 35; Journal ID: ISSN 1614-6832
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; Defect characterization; semiconductors; chalcopyrites; DLTS; electron energy-loss spectroscopy; electron microscopy; photovoltaics
Citation Formats
Deitz, Julia I., Paul, Pran K., Farshchi, Rouin, Poplavskyy, Dmitry, Bailey, Jeff, Arehart, Aaron R., McComb, David W., and Grassman, Tyler J. Direct Nanoscale Characterization of Deep Levels in AgCuInGaSe2 Using Electron Energy–Loss Spectroscopy in the Scanning Transmission Electron Microscope. United States: N. p., 2019.
Web. doi:10.1002/aenm.201901612.
Deitz, Julia I., Paul, Pran K., Farshchi, Rouin, Poplavskyy, Dmitry, Bailey, Jeff, Arehart, Aaron R., McComb, David W., & Grassman, Tyler J. Direct Nanoscale Characterization of Deep Levels in AgCuInGaSe2 Using Electron Energy–Loss Spectroscopy in the Scanning Transmission Electron Microscope. United States. https://doi.org/10.1002/aenm.201901612
Deitz, Julia I., Paul, Pran K., Farshchi, Rouin, Poplavskyy, Dmitry, Bailey, Jeff, Arehart, Aaron R., McComb, David W., and Grassman, Tyler J. Mon .
"Direct Nanoscale Characterization of Deep Levels in AgCuInGaSe2 Using Electron Energy–Loss Spectroscopy in the Scanning Transmission Electron Microscope". United States. https://doi.org/10.1002/aenm.201901612. https://www.osti.gov/servlets/purl/1766327.
@article{osti_1766327,
title = {Direct Nanoscale Characterization of Deep Levels in AgCuInGaSe2 Using Electron Energy–Loss Spectroscopy in the Scanning Transmission Electron Microscope},
author = {Deitz, Julia I. and Paul, Pran K. and Farshchi, Rouin and Poplavskyy, Dmitry and Bailey, Jeff and Arehart, Aaron R. and McComb, David W. and Grassman, Tyler J.},
abstractNote = {A new experimental framework for the characterization of defects in semiconductors is demonstrated. Through the direct, energy-resolved correlation of three analytical techniques spanning six orders of magnitude in spatial resolution, a critical mid-bandgap electronic trap level (EV + 0.56 eV) within Ag0.2Cu0.8In1–xGaxSe2 is traced to its nanoscale physical location and chemical source. This is achieved through a stepwise, site-specific correlated characterization workflow consisting of device-scale (≈1 mm2) deep level transient spectroscopy (DLTS) to survey the traps present, scanning probe–based DLTS (scanning-DLTS) for mesoscale-resolved (hundreds of nanometers) mapping of the target trap state’s spatial distribution, and scanning transmission electron microscope based electron energy-loss spectroscopy (STEM-EELS) and X-ray energy-dispersive spectroscopy for nanoscale energy-, structure, and chemical-resolved investigation of the defect source. Furthermore, this first demonstration of the direct observation of sub-bandgap defect levels via STEM-EELS, combined with the DLTS methods, provides strong evidence that the longsuspected CuIn/Ga substitutional defects are indeed the most likely source of the EV + 0.56 eV trap state and serves as a key example of this approach for the fundamental identification of defects within semiconductors, in general.},
doi = {10.1002/aenm.201901612},
journal = {Advanced Energy Materials},
number = 35,
volume = 9,
place = {United States},
year = {Mon Aug 05 00:00:00 EDT 2019},
month = {Mon Aug 05 00:00:00 EDT 2019}
}
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