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Title: Influence of Tabula Rasa on Process- and Light-Induced Degradation of Solar Cells Fabricated From Czochralski Silicon

Abstract

Monocrystalline Si solar cells are fabricated from Czochralski (Cz) Si, which contains 1017–1018 cm-3 oxygen atoms. Cz Si undergoes degradation during high-temperature thermal processing steps, such as dopant diffusion to form the p - n junction. This degradation in the bulk minority carrier lifetime can be related to the formation of oxygen precipitates. We found that a high-temperature annealing process known as tabula rasa (TR) not only mitigates process-induced degradation via oxygen precipitate nuclei dissolution, but also modifies subsequent light-induced degradation. We report on the bulk carrier lifetime of n - and p -type Cz Si after TR, which homogenizes the interstitial oxygen in the bulk Si to its monoatomic form in either an N 2 or O 2 environment. A control sample, which was not subjected to a TR processing step, experienced severe process-induced degradation during a boron emitter thermal budget as oxygen precipitates were formed in the Si bulk. These precipitates could be imaged using photoluminescence. Additionally, samples that underwent a TR processing step prior to the boron emitter thermal budget show efficient gettering of metallic impurities compared to the control sample, which showed a decline in the implied open-circuit voltage after the gettering step. Furthermore, modification ofmore » the interstitial oxygen bonding by TR had a strong effect on the light-induced degradation kinetics. Instead of a typically observed monotonic decrease, minority carrier lifetime increases first, followed by a nonmonotonic decrease over a ~20 h period. Finally, we conclude that by modifying the interstitial oxygen bonding via TR pretreatment, p -type Cz Si wafers become substantially resistant to harsh solar cell processes and strongly modified light-induced degradation, which would open alternative ways to mitigate this degradation mechanism.« less

Authors:
ORCiD logo [1];  [2];  [2]; ORCiD logo [3];  [2]; ORCiD logo [2];  [3]; ORCiD logo [2]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States); Colorado School of Mines, Golden, CO (United States)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  3. Colorado School of Mines, Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1726057
Report Number(s):
NREL/JA-5900-77729
Journal ID: ISSN 2156-3381; MainId:30644;UUID:41f69b10-e381-4e6b-aa09-151e81c8c630;MainAdminID:18882
Grant/Contract Number:  
AC36-08GO28308; EE0008171
Resource Type:
Accepted Manuscript
Journal Name:
IEEE Journal of Photovoltaics
Additional Journal Information:
Journal Volume: 10; Journal Issue: 6; Journal ID: ISSN 2156-3381
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; degradation; oxygen precipitation; silicon solar cell; Tabula Rasa; photovoltaic

Citation Formats

Meyer, Abigail R., LaSalvia, Vincenzo, Nemeth, William, Xu, Wanxing, Page, Matthew, Young, David L., Agarwal, Sumit, and Stradins, Paul. Influence of Tabula Rasa on Process- and Light-Induced Degradation of Solar Cells Fabricated From Czochralski Silicon. United States: N. p., 2020. Web. doi:10.1109/jphotov.2020.3020214.
Meyer, Abigail R., LaSalvia, Vincenzo, Nemeth, William, Xu, Wanxing, Page, Matthew, Young, David L., Agarwal, Sumit, & Stradins, Paul. Influence of Tabula Rasa on Process- and Light-Induced Degradation of Solar Cells Fabricated From Czochralski Silicon. United States. https://doi.org/10.1109/jphotov.2020.3020214
Meyer, Abigail R., LaSalvia, Vincenzo, Nemeth, William, Xu, Wanxing, Page, Matthew, Young, David L., Agarwal, Sumit, and Stradins, Paul. Mon . "Influence of Tabula Rasa on Process- and Light-Induced Degradation of Solar Cells Fabricated From Czochralski Silicon". United States. https://doi.org/10.1109/jphotov.2020.3020214. https://www.osti.gov/servlets/purl/1726057.
@article{osti_1726057,
title = {Influence of Tabula Rasa on Process- and Light-Induced Degradation of Solar Cells Fabricated From Czochralski Silicon},
author = {Meyer, Abigail R. and LaSalvia, Vincenzo and Nemeth, William and Xu, Wanxing and Page, Matthew and Young, David L. and Agarwal, Sumit and Stradins, Paul},
abstractNote = {Monocrystalline Si solar cells are fabricated from Czochralski (Cz) Si, which contains 1017–1018 cm-3 oxygen atoms. Cz Si undergoes degradation during high-temperature thermal processing steps, such as dopant diffusion to form the p - n junction. This degradation in the bulk minority carrier lifetime can be related to the formation of oxygen precipitates. We found that a high-temperature annealing process known as tabula rasa (TR) not only mitigates process-induced degradation via oxygen precipitate nuclei dissolution, but also modifies subsequent light-induced degradation. We report on the bulk carrier lifetime of n - and p -type Cz Si after TR, which homogenizes the interstitial oxygen in the bulk Si to its monoatomic form in either an N 2 or O 2 environment. A control sample, which was not subjected to a TR processing step, experienced severe process-induced degradation during a boron emitter thermal budget as oxygen precipitates were formed in the Si bulk. These precipitates could be imaged using photoluminescence. Additionally, samples that underwent a TR processing step prior to the boron emitter thermal budget show efficient gettering of metallic impurities compared to the control sample, which showed a decline in the implied open-circuit voltage after the gettering step. Furthermore, modification of the interstitial oxygen bonding by TR had a strong effect on the light-induced degradation kinetics. Instead of a typically observed monotonic decrease, minority carrier lifetime increases first, followed by a nonmonotonic decrease over a ~20 h period. Finally, we conclude that by modifying the interstitial oxygen bonding via TR pretreatment, p -type Cz Si wafers become substantially resistant to harsh solar cell processes and strongly modified light-induced degradation, which would open alternative ways to mitigate this degradation mechanism.},
doi = {10.1109/jphotov.2020.3020214},
journal = {IEEE Journal of Photovoltaics},
number = 6,
volume = 10,
place = {United States},
year = {Mon Sep 14 00:00:00 EDT 2020},
month = {Mon Sep 14 00:00:00 EDT 2020}
}