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Title: Investigation of Off-Stoichiometry in Ternary Nitrides by EDS and HRTEM

Abstract

We demonstrate an inverted metamorphic multijunction (IMM) photovoltaic cell comprising lattice-mismatched 1.2 eV AlGaInAs and 1.0 eV GaInAs junctions optimized for high-temperature thermophotovoltaic (TPV) applications. This device differs from traditional IMM solar cells because the mismatched junctions are grown at a single lattice constant. This architecture enables removal of the compositionally graded buffer which otherwise filters light from the junctions below and absorbs sub-bandgap light via free-carrier absorption. Sub-bandgap absorption dramatically reduces the efficiency of TPV systems using high reflectivity cells to enable bandedge spectrum filtering. Three components required development to enable this device: 1) a lattice-mismatched 1.2 eV AlGaInAs junction, 2) a metamorphic contact layer grown after the graded buffer, and 3) a transparent tunnel junction that sits in front of the 1.0 eV GaInAs junction. Growth conditions that minimize oxygen defect incorporation maximize AlGaInAs cell quality, enabling a 0.41 V bandgap open circuit voltage offset at 22 mA/cm2 under AM1.5D. A mismatched GaInAs:Se layer is developed as a low resistance contact. Lastly we develop a GaAsSb:C/GaInP:Se tunnel junction suitable for high-power densities with more transparency than the GaAsSb:C/GaInP:Se structure used in past IMM cells. We characterize the tandem device under a high-intensity spectrum that approximates the emission frommore » a 2150 °C blackbody radiator and deduce a projected ideal TPV efficiency of 39.9% at ~30% of the blackbody irradiance, and 36% ideal TPV efficiency under the full 118 W/cm2 irradiance. Improvements to the back-surface reflectivity and series resistance are expected to increase the ideal TPV efficiency well above 40%.« less

Authors:
 [1];  [2];  [1];  [2];  [1]
  1. Colorado School of Mines, Golden, CO (United States)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1710153
Report Number(s):
NREL/JA-5K00-78121
Journal ID: ISSN 1431-9276; MainId:32030;UUID:5829f8a7-5389-4ad8-9c09-5699e46db27f;MainAdminID:18711; TRN: US2204644
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Accepted Manuscript
Journal Name:
Microscopy and Microanalysis
Additional Journal Information:
Journal Volume: 26; Journal Issue: S2; Journal ID: ISSN 1431-9276
Publisher:
Microscopy Society of America (MSA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; semiconductors; ternary nitrides; optoelectronics

Citation Formats

Mis, Allison, Greenaway, Ann, Melamed, Celeste, Tamboli, Adele, and Brennecka, Geoff. Investigation of Off-Stoichiometry in Ternary Nitrides by EDS and HRTEM. United States: N. p., 2020. Web. doi:10.1017/s1431927620017997.
Mis, Allison, Greenaway, Ann, Melamed, Celeste, Tamboli, Adele, & Brennecka, Geoff. Investigation of Off-Stoichiometry in Ternary Nitrides by EDS and HRTEM. United States. https://doi.org/10.1017/s1431927620017997
Mis, Allison, Greenaway, Ann, Melamed, Celeste, Tamboli, Adele, and Brennecka, Geoff. Thu . "Investigation of Off-Stoichiometry in Ternary Nitrides by EDS and HRTEM". United States. https://doi.org/10.1017/s1431927620017997. https://www.osti.gov/servlets/purl/1710153.
@article{osti_1710153,
title = {Investigation of Off-Stoichiometry in Ternary Nitrides by EDS and HRTEM},
author = {Mis, Allison and Greenaway, Ann and Melamed, Celeste and Tamboli, Adele and Brennecka, Geoff},
abstractNote = {We demonstrate an inverted metamorphic multijunction (IMM) photovoltaic cell comprising lattice-mismatched 1.2 eV AlGaInAs and 1.0 eV GaInAs junctions optimized for high-temperature thermophotovoltaic (TPV) applications. This device differs from traditional IMM solar cells because the mismatched junctions are grown at a single lattice constant. This architecture enables removal of the compositionally graded buffer which otherwise filters light from the junctions below and absorbs sub-bandgap light via free-carrier absorption. Sub-bandgap absorption dramatically reduces the efficiency of TPV systems using high reflectivity cells to enable bandedge spectrum filtering. Three components required development to enable this device: 1) a lattice-mismatched 1.2 eV AlGaInAs junction, 2) a metamorphic contact layer grown after the graded buffer, and 3) a transparent tunnel junction that sits in front of the 1.0 eV GaInAs junction. Growth conditions that minimize oxygen defect incorporation maximize AlGaInAs cell quality, enabling a 0.41 V bandgap open circuit voltage offset at 22 mA/cm2 under AM1.5D. A mismatched GaInAs:Se layer is developed as a low resistance contact. Lastly we develop a GaAsSb:C/GaInP:Se tunnel junction suitable for high-power densities with more transparency than the GaAsSb:C/GaInP:Se structure used in past IMM cells. We characterize the tandem device under a high-intensity spectrum that approximates the emission from a 2150 °C blackbody radiator and deduce a projected ideal TPV efficiency of 39.9% at ~30% of the blackbody irradiance, and 36% ideal TPV efficiency under the full 118 W/cm2 irradiance. Improvements to the back-surface reflectivity and series resistance are expected to increase the ideal TPV efficiency well above 40%.},
doi = {10.1017/s1431927620017997},
journal = {Microscopy and Microanalysis},
number = S2,
volume = 26,
place = {United States},
year = {Thu Jul 30 00:00:00 EDT 2020},
month = {Thu Jul 30 00:00:00 EDT 2020}
}

Works referenced in this record:

Composition, structure, and semiconducting properties of Mg x Zr 2− x N 2 thin films
journal, May 2019

  • Bauers, Sage R.; Hamann, Danielle M.; Patterson, Ashlea
  • Japanese Journal of Applied Physics, Vol. 58, Issue SC
  • DOI: 10.7567/1347-4065/ab0f0f