The Concept of Negative Capacitance in Ionically Conductive Van der Waals Ferroelectrics
Abstract
Abstract Negative capacitance (NC) provides a path to overcome the Boltzmann limit that dictates operating voltages in transistors and, therefore, may open up a path to the challenging proposition of lowering energy consumption and waste heat in nanoelectronic integrated circuits. Typically, NC effects in ferroelectric materials are based on either stabilizing a zero‐polarization state or slowing down ferroelectric switching in order to access NC regimes of the free‐energy distribution. Here, a fundamentally different mechanism for NC, based on CuInP 2 S 6 , a van der Waals layered ferrielectric, is demonstrated. Using density functional theory and piezoresponse force microscopy, it is shown that an unusual combination of high Cu‐ion mobility and its crucial role in determining polarization magnitude and orientation (P) leads to a negative slope of the polarization versus the electric field E, dP / dE < 0, which is a requirement for NC. This mechanism for NC is likely to occur in a wide class of materials, offering new possibilities for NC‐based devices. The nanoscale demonstration of this mechanism can be extended to the device‐level by increasing the regions of homogeneous polarization and polarization switching, for example, through strain engineering and carefully selected electric field pulses.
- Authors:
-
[1];
[5];
[1];
[1]
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
- Vanderbilt Univ., Nashville, TN (United States); Univ. of Chinese Academy of Sciences & Inst. of Physics, Chinese Academy of Sciences, Beijing (China)
- Vanderbilt Univ., Nashville, TN (United States)
- Air Force Research Lab. (AFRL), Wright-Patterson AFB, OH (United States)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Publication Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); Air Force Research Laboratory
- OSTI Identifier:
- 1694376
- Alternate Identifier(s):
- OSTI ID: 1804539
- Grant/Contract Number:
- AC05-00OR22725; FG02‐09ER46554; AC02‐05CH11231; 19RXCOR052; DE‐FG02‐09ER46554; DE‐AC02‐05CH11231
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Energy Materials
- Additional Journal Information:
- Journal Volume: 10; Journal Issue: 39; Journal ID: ISSN 1614-6832
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Neumayer, Sabine M., Tao, Lei, O'Hara, Andrew, Susner, Michael A., McGuire, Michael A., Maksymovych, Petro, Pantelides, Sokrates T., and Balke, Nina. The Concept of Negative Capacitance in Ionically Conductive Van der Waals Ferroelectrics. United States: N. p., 2020.
Web. doi:10.1002/aenm.202001726.
Neumayer, Sabine M., Tao, Lei, O'Hara, Andrew, Susner, Michael A., McGuire, Michael A., Maksymovych, Petro, Pantelides, Sokrates T., & Balke, Nina. The Concept of Negative Capacitance in Ionically Conductive Van der Waals Ferroelectrics. United States. https://doi.org/10.1002/aenm.202001726
Neumayer, Sabine M., Tao, Lei, O'Hara, Andrew, Susner, Michael A., McGuire, Michael A., Maksymovych, Petro, Pantelides, Sokrates T., and Balke, Nina. Thu .
"The Concept of Negative Capacitance in Ionically Conductive Van der Waals Ferroelectrics". United States. https://doi.org/10.1002/aenm.202001726. https://www.osti.gov/servlets/purl/1694376.
@article{osti_1694376,
title = {The Concept of Negative Capacitance in Ionically Conductive Van der Waals Ferroelectrics},
author = {Neumayer, Sabine M. and Tao, Lei and O'Hara, Andrew and Susner, Michael A. and McGuire, Michael A. and Maksymovych, Petro and Pantelides, Sokrates T. and Balke, Nina},
abstractNote = {Abstract Negative capacitance (NC) provides a path to overcome the Boltzmann limit that dictates operating voltages in transistors and, therefore, may open up a path to the challenging proposition of lowering energy consumption and waste heat in nanoelectronic integrated circuits. Typically, NC effects in ferroelectric materials are based on either stabilizing a zero‐polarization state or slowing down ferroelectric switching in order to access NC regimes of the free‐energy distribution. Here, a fundamentally different mechanism for NC, based on CuInP 2 S 6 , a van der Waals layered ferrielectric, is demonstrated. Using density functional theory and piezoresponse force microscopy, it is shown that an unusual combination of high Cu‐ion mobility and its crucial role in determining polarization magnitude and orientation (P) leads to a negative slope of the polarization versus the electric field E, dP / dE < 0, which is a requirement for NC. This mechanism for NC is likely to occur in a wide class of materials, offering new possibilities for NC‐based devices. The nanoscale demonstration of this mechanism can be extended to the device‐level by increasing the regions of homogeneous polarization and polarization switching, for example, through strain engineering and carefully selected electric field pulses.},
doi = {10.1002/aenm.202001726},
journal = {Advanced Energy Materials},
number = 39,
volume = 10,
place = {United States},
year = {Thu Sep 03 00:00:00 EDT 2020},
month = {Thu Sep 03 00:00:00 EDT 2020}
}
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