Dual-Wavelength Y-Branch DBR Lasers With 100 mW of CW Power Near 2 μm

Jiang, Jiang; Shterengas, Leon; Stein, Aaron; Kipshidze, Gela; Belyanin, Alexey; Belenky, Gregory

doi:10.1109/lpt.2020.3009663

Title: Dual-Wavelength Y-Branch DBR Lasers With 100 mW of CW Power Near 2 μm

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Abstract

In this study, the interband GaSb-based diode lasers emitting simultaneously in two narrow bands separated by either ~1.6 or ~3.3 THz were designed, fabricated and characterized. The device active region contained one asymmetric tunnel-coupled double quantum well with separation between two lowest electron subbands controlled by thickness of the tunnel barrier. The Y-branch 6th order distributed Bragg reflector devices have been fabricated with either deep or shallow etched ridge waveguides. The increase of the deeply etched ridge waveguide width from 10 to 20 μm improved laser threshold and efficiency thanks to reduction of the relative role of the sidewall defect recombination. Further improvement of the device performance parameter was achieved by shallow etching. The shallow etched lasers with stable dual-wavelength emission spectrum generated 100 mW of continuous wave output power at 20 °C

Authors:

^[1];

^[2];

^[1]; Belyanin, Alexey ^[3]; Belenky, Gregory ^[1]

State Univ. of New York (SUNY), Stony Brook, NY (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
Texas A & M Univ., College Station, TX (United States)

Publication Date:: Thu Jul 16 00:00:00 EDT 2020

Research Org.:: Brookhaven National Lab. (BNL), Upton, NY (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)

OSTI Identifier:: 1658554

Report Number(s):: BNL-216334-2020-JAAM
Journal ID: ISSN 1041-1135

Grant/Contract Number:: SC0012704; ECCS-1707317US

Resource Type:: Accepted Manuscript

Journal Name:: IEEE Photonics Technology Letters

Additional Journal Information:: Journal Volume: 32; Journal Issue: 17; Journal ID: ISSN 1041-1135

Publisher:: IEEE

Country of Publication:: United States

Language:: English

Subject:: 77 NANOSCIENCE AND NANOTECHNOLOGY; DBR; GaSb-based; mid-infrared; semiconductor lasers; type-I quantum well; Y-branch

Citation Formats


                    Jiang, Jiang, Shterengas, Leon, Stein, Aaron, Kipshidze, Gela, Belyanin, Alexey, and Belenky, Gregory. Dual-Wavelength Y-Branch DBR Lasers With 100 mW of CW Power Near 2 μm.  United States: N. p., 2020. 
Web.  doi:10.1109/lpt.2020.3009663.

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                    Jiang, Jiang, Shterengas, Leon, Stein, Aaron, Kipshidze, Gela, Belyanin, Alexey, & Belenky, Gregory. Dual-Wavelength Y-Branch DBR Lasers With 100 mW of CW Power Near 2 μm.  United States.  https://doi.org/10.1109/lpt.2020.3009663

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                    Jiang, Jiang, Shterengas, Leon, Stein, Aaron, Kipshidze, Gela, Belyanin, Alexey, and Belenky, Gregory. Thu .  
"Dual-Wavelength Y-Branch DBR Lasers With 100 mW of CW Power Near 2 μm".  United States.  https://doi.org/10.1109/lpt.2020.3009663.  https://www.osti.gov/servlets/purl/1658554.

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@article{osti_1658554,

  title        = {Dual-Wavelength Y-Branch DBR Lasers With 100 mW of CW Power Near 2 μm},

  author       = {Jiang, Jiang and Shterengas, Leon and Stein, Aaron and Kipshidze, Gela and Belyanin, Alexey and Belenky, Gregory},

  abstractNote = {In this study, the interband GaSb-based diode lasers emitting simultaneously in two narrow bands separated by either ~1.6 or ~3.3 THz were designed, fabricated and characterized. The device active region contained one asymmetric tunnel-coupled double quantum well with separation between two lowest electron subbands controlled by thickness of the tunnel barrier. The Y-branch 6th order distributed Bragg reflector devices have been fabricated with either deep or shallow etched ridge waveguides. The increase of the deeply etched ridge waveguide width from 10 to 20 μm improved laser threshold and efficiency thanks to reduction of the relative role of the sidewall defect recombination. Further improvement of the device performance parameter was achieved by shallow etching. The shallow etched lasers with stable dual-wavelength emission spectrum generated 100 mW of continuous wave output power at 20 °C},

  doi          = {10.1109/lpt.2020.3009663},

  journal      = {IEEE Photonics Technology Letters},

  number       = 17,

  volume       = 32,

  place        = {United States},

  year         = {Thu Jul 16 00:00:00 EDT 2020},

  month        = {Thu Jul 16 00:00:00 EDT 2020}

}

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