Electronic Structure, Optical Properties, and Photoelectrochemical Activity of Sn-Doped Fe2O3 Thin Films
Abstract
Hematite (Fe2O3) is a well-known oxide semiconductor suitable for photoelectrochemical (PEC) water splitting and industry gas sensing. It is widely known that Sn doping of Fe2O3 can enhance the device performance, yet the underlying mechanism remains elusive. In this work, we determine the relationship between electronic structure, optical properties and PEC activity of Sn doped Fe2O3 by studying highly crystalline, well-controlled thin films prepared by pulsed laser deposition (PLD). We show that Sn doping substantially increases the n-type conductivity of Fe2O3, and the conduction mechanism is better described by small-polaron hoping (SPH) model. Only 0.2% Sn doping significantly reduce the activation energy barrier for SPH conduction from at least 0.5 eV for undoped Fe2O3 to 0.14 eV for doped ones. A combination of X-ray photoemission, X-ray absorption spectroscopy and DFT calculations reveals the Fermi level gradually shifts toward the conduction band minimum with Sn doping. A localized Fe2+like gap state is observed at the top of valence band, accounting for the SPH conduction. Interestingly, in contrast to the literature, we find that only 0.2% Sn doping in Fe2O3 significantly improves the PEC activity, while more Sn decreases it. The improved PEC activity is partially attributed to an increased band bendingmore »
- Authors:
-
- Xiamen Univ. (China)
- Univ. of Cambridge (United Kingdom)
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
- Univ. of Electronic Science and Technology of China, Chengdu (China)
- Xiamen Univ. (China); Southern Univ. of Science and Technology, Guangdong (China)
- Southern Univ. of Science and Technology, Shenzhen (China)
- Queensland Univ. of Technology, Brisbane, QLD (Australia)
- Xiamen Univ. (China); Univ. of Cambridge (United Kingdom)
- Publication Date:
- Research Org.:
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1650658
- Report Number(s):
- PNNL-SA-151625
Journal ID: ISSN 1932-7447
- Grant/Contract Number:
- AC05-76RL01830
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Physical Chemistry. C
- Additional Journal Information:
- Journal Volume: 124; Journal Issue: 23; Journal ID: ISSN 1932-7447
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; Photoelectrochemical water splitting; Oxide semiconducter; Electronic Structure; Doping; Photoemission Spectroscopy
Citation Formats
Tian, C. M., Li, W. -W., Lin, Y. M., Yang, Z. Z., Wang, L., Du, Y. G., Xiao, H. Y., Qiao, L., Zhang, J. Y., Chen, L., Qi, Dong-Chen, MacManus-Driscoll, J. L., and Zhang, K. L. Electronic Structure, Optical Properties, and Photoelectrochemical Activity of Sn-Doped Fe2O3 Thin Films. United States: N. p., 2020.
Web. doi:10.1021/acs.jpcc.0c02875.
Tian, C. M., Li, W. -W., Lin, Y. M., Yang, Z. Z., Wang, L., Du, Y. G., Xiao, H. Y., Qiao, L., Zhang, J. Y., Chen, L., Qi, Dong-Chen, MacManus-Driscoll, J. L., & Zhang, K. L. Electronic Structure, Optical Properties, and Photoelectrochemical Activity of Sn-Doped Fe2O3 Thin Films. United States. https://doi.org/10.1021/acs.jpcc.0c02875
Tian, C. M., Li, W. -W., Lin, Y. M., Yang, Z. Z., Wang, L., Du, Y. G., Xiao, H. Y., Qiao, L., Zhang, J. Y., Chen, L., Qi, Dong-Chen, MacManus-Driscoll, J. L., and Zhang, K. L. Tue .
"Electronic Structure, Optical Properties, and Photoelectrochemical Activity of Sn-Doped Fe2O3 Thin Films". United States. https://doi.org/10.1021/acs.jpcc.0c02875. https://www.osti.gov/servlets/purl/1650658.
@article{osti_1650658,
title = {Electronic Structure, Optical Properties, and Photoelectrochemical Activity of Sn-Doped Fe2O3 Thin Films},
author = {Tian, C. M. and Li, W. -W. and Lin, Y. M. and Yang, Z. Z. and Wang, L. and Du, Y. G. and Xiao, H. Y. and Qiao, L. and Zhang, J. Y. and Chen, L. and Qi, Dong-Chen and MacManus-Driscoll, J. L. and Zhang, K. L.},
abstractNote = {Hematite (Fe2O3) is a well-known oxide semiconductor suitable for photoelectrochemical (PEC) water splitting and industry gas sensing. It is widely known that Sn doping of Fe2O3 can enhance the device performance, yet the underlying mechanism remains elusive. In this work, we determine the relationship between electronic structure, optical properties and PEC activity of Sn doped Fe2O3 by studying highly crystalline, well-controlled thin films prepared by pulsed laser deposition (PLD). We show that Sn doping substantially increases the n-type conductivity of Fe2O3, and the conduction mechanism is better described by small-polaron hoping (SPH) model. Only 0.2% Sn doping significantly reduce the activation energy barrier for SPH conduction from at least 0.5 eV for undoped Fe2O3 to 0.14 eV for doped ones. A combination of X-ray photoemission, X-ray absorption spectroscopy and DFT calculations reveals the Fermi level gradually shifts toward the conduction band minimum with Sn doping. A localized Fe2+like gap state is observed at the top of valence band, accounting for the SPH conduction. Interestingly, in contrast to the literature, we find that only 0.2% Sn doping in Fe2O3 significantly improves the PEC activity, while more Sn decreases it. The improved PEC activity is partially attributed to an increased band bending potential which facilitates the charge separation at space charge region. The reduced activation energy barrier for SPH will facilitate the transport of photo-excited carriers for the enhanced PEC, which is of interest for further carrier dynamics study.},
doi = {10.1021/acs.jpcc.0c02875},
journal = {Journal of Physical Chemistry. C},
number = 23,
volume = 124,
place = {United States},
year = {Tue May 12 00:00:00 EDT 2020},
month = {Tue May 12 00:00:00 EDT 2020}
}
Web of Science
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