Heavy ion irradiation effects on GaN/AlGaN high electron mobility transistor failure at off-state

Islam, Zahabul; Paoletta, Angela L.; Monterrosa, Anthony M.; Schuler, Jennifer D.; Rupert, Timothy J.; Hattar, Khalid; Glavin, Nicholas; Haque, Aman

doi:10.1016/j.microrel.2019.113493

Title: Heavy ion irradiation effects on GaN/AlGaN high electron mobility transistor failure at off-state

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Abstract

We investigate the effects of ion irradiation on AlGaN/GaN high electron mobility electron transistors using in-situ transmission electron microscopy. The experiments are performed inside the microscope to visualize the defects, microstructure and interfaces of ion irradiated transistors during operation and failure. Here, experimental results indicate that heavy ions such as Au⁴⁺ can create a significant number of defects such as vacancies, interstitials and dislocations in the device layer. It is hypothesized that these defects act as charge traps in the device layer and the resulting charge accumulation lowers the breakdown voltage. Sequential energy dispersive X-ray spectroscopy mapping allows us to track individual chemical elements during the experiment, and the results suggest that the electrical degradation in the device layer may originate from oxygen and nitrogen vacancies.

Authors:

Islam, Zahabul ^[1]; Paoletta, Angela L. ^[2]; Monterrosa, Anthony M. ^[3]; Schuler, Jennifer D. ^[4]; Rupert, Timothy J. ^[4]; Hattar, Khalid ^[3]; Glavin, Nicholas ^[5]; Haque, Aman ^[1]

Pennsylvania State Univ., University Park, PA (United States). Dept. of Mechanical Engineering
Princeton Univ., NJ (United States). Dept. of Chemistry
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Univ. of California, Irvine, CA (United States). Dept. of Materials Science and Engineering
Air Force Research Lab. (AFRL), Wright-Patterson AFB, OH (United States). Materials and Manufacturing Directorate

Publication Date:: Wed Aug 21 00:00:00 EDT 2019

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1650173

Alternate Identifier(s):: OSTI ID: 1776129

Report Number(s):: SAND-2020-8429J
Journal ID: ISSN 0026-2714; 689939

Grant/Contract Number:: AC04-94AL85000; 1609060; NA-0003525

Resource Type:: Accepted Manuscript

Journal Name:: Microelectronics and Reliability

Additional Journal Information:: Journal Volume: 102; Journal ID: ISSN 0026-2714

Publisher:: Elsevier

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; ion irradiation; high electron mobility transistor (HEMT); in-situ transmission electron microscopy (in-situ TEM); energy dispersive x-ray spectroscopy (EDS)

Citation Formats


                    Islam, Zahabul, Paoletta, Angela L., Monterrosa, Anthony M., Schuler, Jennifer D., Rupert, Timothy J., Hattar, Khalid, Glavin, Nicholas, and Haque, Aman. Heavy ion irradiation effects on GaN/AlGaN high electron mobility transistor failure at off-state.  United States: N. p., 2019. 
Web.  doi:10.1016/j.microrel.2019.113493.

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                    Islam, Zahabul, Paoletta, Angela L., Monterrosa, Anthony M., Schuler, Jennifer D., Rupert, Timothy J., Hattar, Khalid, Glavin, Nicholas, & Haque, Aman. Heavy ion irradiation effects on GaN/AlGaN high electron mobility transistor failure at off-state.  United States.  https://doi.org/10.1016/j.microrel.2019.113493

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                    Islam, Zahabul, Paoletta, Angela L., Monterrosa, Anthony M., Schuler, Jennifer D., Rupert, Timothy J., Hattar, Khalid, Glavin, Nicholas, and Haque, Aman. Wed .  
"Heavy ion irradiation effects on GaN/AlGaN high electron mobility transistor failure at off-state".  United States.  https://doi.org/10.1016/j.microrel.2019.113493.  https://www.osti.gov/servlets/purl/1650173.

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@article{osti_1650173,

  title        = {Heavy ion irradiation effects on GaN/AlGaN high electron mobility transistor failure at off-state},

  author       = {Islam, Zahabul and Paoletta, Angela L. and Monterrosa, Anthony M. and Schuler, Jennifer D. and Rupert, Timothy J. and Hattar, Khalid and Glavin, Nicholas and Haque, Aman},

  abstractNote = {We investigate the effects of ion irradiation on AlGaN/GaN high electron mobility electron transistors using in-situ transmission electron microscopy. The experiments are performed inside the microscope to visualize the defects, microstructure and interfaces of ion irradiated transistors during operation and failure. Here, experimental results indicate that heavy ions such as Au4+ can create a significant number of defects such as vacancies, interstitials and dislocations in the device layer. It is hypothesized that these defects act as charge traps in the device layer and the resulting charge accumulation lowers the breakdown voltage. Sequential energy dispersive X-ray spectroscopy mapping allows us to track individual chemical elements during the experiment, and the results suggest that the electrical degradation in the device layer may originate from oxygen and nitrogen vacancies.},

  doi          = {10.1016/j.microrel.2019.113493},

  journal      = {Microelectronics and Reliability},

  number       = ,

  volume       = 102,

  place        = {United States},

  year         = {Wed Aug 21 00:00:00 EDT 2019},

  month        = {Wed Aug 21 00:00:00 EDT 2019}

}

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