Irradiation induced creep in nanocrystalline high entropy alloys
Abstract
Irradiation induced creep (IIC) compliance in NiCoFeCrMn high entropy alloys is measured as a function of grain size (30 < x < 80 nm) and temperature (23° C- 500° C). For 2.6 MeV Ag3+ irradiation at a dose rate of 1.5x10-3 dpa-1s-1 the transition from the recombination to sink limited regimes occurs at ~ 100 °C. In the sink-limited regime, the IIC compliance scales inversely with grain size, consistent with a recently proposed model for grain boundary IIC [1]. Thermal creep rate is also measured; it does not become comparable to the IIC rate, however, until ~ 650 oC. The results are discussed in context of defect kinetics in irradiated HEA systems.
- Authors:
-
- Univ. of Illinois at Urbana-Champaign, IL (United States). Dept. of Materials Science and Engineering
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. of Illinois at Urbana-Champaign, IL (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division
- Contributing Org.:
- Sandia National Laboratories
- OSTI Identifier:
- 1650165
- Alternate Identifier(s):
- OSTI ID: 1607542; OSTI ID: 1774580
- Report Number(s):
- SAND-2020-8400J
Journal ID: ISSN 1359-6454; 689923
- Grant/Contract Number:
- AC04-94AL85000; NA0003525; SC0019875; FG02-05ER46217; FWP-15013170; NA-0003525; DE-SC0019875
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Acta Materialia
- Additional Journal Information:
- Journal Volume: 182; Journal ID: ISSN 1359-6454
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; high entropy alloy (HEA); irradiation induced creep; vacancy migration enthalpy; in situ transmission electron microscopy
Citation Formats
Jawaharram, Gowtham Sriram, Barr, ChristopherM., Monterrosa, AnthonyM., Hattar, Khalid Mikhiel, Averback, Robert S., and Dillon, Shen J. Irradiation induced creep in nanocrystalline high entropy alloys. United States: N. p., 2019.
Web. doi:10.1016/j.actamat.2019.10.022.
Jawaharram, Gowtham Sriram, Barr, ChristopherM., Monterrosa, AnthonyM., Hattar, Khalid Mikhiel, Averback, Robert S., & Dillon, Shen J. Irradiation induced creep in nanocrystalline high entropy alloys. United States. https://doi.org/10.1016/j.actamat.2019.10.022
Jawaharram, Gowtham Sriram, Barr, ChristopherM., Monterrosa, AnthonyM., Hattar, Khalid Mikhiel, Averback, Robert S., and Dillon, Shen J. Sat .
"Irradiation induced creep in nanocrystalline high entropy alloys". United States. https://doi.org/10.1016/j.actamat.2019.10.022. https://www.osti.gov/servlets/purl/1650165.
@article{osti_1650165,
title = {Irradiation induced creep in nanocrystalline high entropy alloys},
author = {Jawaharram, Gowtham Sriram and Barr, ChristopherM. and Monterrosa, AnthonyM. and Hattar, Khalid Mikhiel and Averback, Robert S. and Dillon, Shen J.},
abstractNote = {Irradiation induced creep (IIC) compliance in NiCoFeCrMn high entropy alloys is measured as a function of grain size (30 < x < 80 nm) and temperature (23° C- 500° C). For 2.6 MeV Ag3+ irradiation at a dose rate of 1.5x10-3 dpa-1s-1 the transition from the recombination to sink limited regimes occurs at ~ 100 °C. In the sink-limited regime, the IIC compliance scales inversely with grain size, consistent with a recently proposed model for grain boundary IIC [1]. Thermal creep rate is also measured; it does not become comparable to the IIC rate, however, until ~ 650 oC. The results are discussed in context of defect kinetics in irradiated HEA systems.},
doi = {10.1016/j.actamat.2019.10.022},
journal = {Acta Materialia},
number = ,
volume = 182,
place = {United States},
year = {Sat Oct 19 00:00:00 EDT 2019},
month = {Sat Oct 19 00:00:00 EDT 2019}
}
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Figures / Tables:
Fig 1: (a) Au lines and pads fabricated on oxidized Si wafer using the thin film lift-off process and (b) Au wire bonds are used to connect the Au pads to the Vespel® mechanical test stage and the focused ion beam was used to fabricate the HEA 3-point bend creepmore »
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