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Title: Structural, band and electrical characterization of β-(Al0.19Ga0.81)2O3 films grown by molecular beam epitaxy on Sn doped β-Ga2O3 substrate

Abstract

In this study, we characterized unintentionally doped β-(Al0.19Ga0.81)2O3 for its structural, band, and electrical properties by using a variety of material and electrical characterization methods such as atom probe tomography (APT), transmission electron microscope, X-ray photoelectron spectroscopy (XPS), capacitance-voltage measurement, and a temperature dependent forward current-voltage measurement. A 115 nm thick β-(Al0.19Ga0.81)2O3 film was grown by molecular beam epitaxy on Sn doped Ga2O3 substrates. Reciprocal space mapping shows a lattice matched (Al0.19Ga0.81)2O3 layer. Both APT and TEM results confirm a sharp β-(Al0.19Ga0.81)2O3/β-Ga2O3 interface. XPS measurements show conduction band offsets of 2.78 ± 0.25 eV and 0.79 ± 0.25 eV between the SiO2/β-(Al0.19Ga0.81)2O3 and β-(Al0.19Ga0.81)2O3/β-Ga2O3 interfaces, respectively. Extracted room temperature Schottky Barrier Heights (SBHs) after zero field correction for Pt, Ni, and Ti were 2.98 ± 0.25 eV, 2.81 ± 0.25 eV, and 1.81 ± 0.25 eV, respectively. The variation of SBHs with metals clearly indicates the dependence on work function.

Authors:
ORCiD logo [1];  [2];  [3];  [4]; ORCiD logo [5]; ORCiD logo [6];  [7];  [7];  [3];  [4];  [2]; ORCiD logo [1]
+ Show Author Affiliations
  1. Univ. at Buffalo, NY (United States). Dept. of Electrical Engineering
  2. Univ. at Buffalo, NY (United States). Dept. of Materials Design and Innovation
  3. Univ. at Buffalo, NY (United States). RENEW Institute
  4. Univ. at Buffalo, NY (United States). Dept. of Chemistry
  5. Chemistry Department, University at Buffalo, Buffalo, New York 14260, USA
  6. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
  7. Novel Crystal Technology, Inc., Sayama (Japan)
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC); National Science Foundation (NSF)
OSTI Identifier:
1648950
Grant/Contract Number:  
AC05-00OR22725; ECCS-1607833
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 126; Journal Issue: 9; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
74 ATOMIC AND MOLECULAR PHYSICS; transmission electron microscopy; work functions; oxides; x-ray photoelectron spectroscopy; semiconductors; electrical characterization; electrical properties and parameters

Citation Formats

Vaidya, Abhishek, Sarker, Jith, Zhang, Yi, Lubecki, Lauren, Wallace, Joshua, Poplawsky, Jonathan D., Sasaki, K., Kuramata, A., Goyal, Amit, Gardella, Joseph A., Mazumder, Baishakhi, and Singisetti, Uttam. Structural, band and electrical characterization of β-(Al0.19Ga0.81)2O3 films grown by molecular beam epitaxy on Sn doped β-Ga2O3 substrate. United States: N. p., 2019. Web. doi:10.1063/1.5113509.
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Vaidya, Abhishek, Sarker, Jith, Zhang, Yi, Lubecki, Lauren, Wallace, Joshua, Poplawsky, Jonathan D., Sasaki, K., Kuramata, A., Goyal, Amit, Gardella, Joseph A., Mazumder, Baishakhi, & Singisetti, Uttam. Structural, band and electrical characterization of β-(Al0.19Ga0.81)2O3 films grown by molecular beam epitaxy on Sn doped β-Ga2O3 substrate. United States. https://doi.org/10.1063/1.5113509
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Vaidya, Abhishek, Sarker, Jith, Zhang, Yi, Lubecki, Lauren, Wallace, Joshua, Poplawsky, Jonathan D., Sasaki, K., Kuramata, A., Goyal, Amit, Gardella, Joseph A., Mazumder, Baishakhi, and Singisetti, Uttam. Tue . "Structural, band and electrical characterization of β-(Al0.19Ga0.81)2O3 films grown by molecular beam epitaxy on Sn doped β-Ga2O3 substrate". United States. https://doi.org/10.1063/1.5113509. https://www.osti.gov/servlets/purl/1648950.
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@article{osti_1648950,
title = {Structural, band and electrical characterization of β-(Al0.19Ga0.81)2O3 films grown by molecular beam epitaxy on Sn doped β-Ga2O3 substrate},
author = {Vaidya, Abhishek and Sarker, Jith and Zhang, Yi and Lubecki, Lauren and Wallace, Joshua and Poplawsky, Jonathan D. and Sasaki, K. and Kuramata, A. and Goyal, Amit and Gardella, Joseph A. and Mazumder, Baishakhi and Singisetti, Uttam},
abstractNote = {In this study, we characterized unintentionally doped β-(Al0.19Ga0.81)2O3 for its structural, band, and electrical properties by using a variety of material and electrical characterization methods such as atom probe tomography (APT), transmission electron microscope, X-ray photoelectron spectroscopy (XPS), capacitance-voltage measurement, and a temperature dependent forward current-voltage measurement. A 115 nm thick β-(Al0.19Ga0.81)2O3 film was grown by molecular beam epitaxy on Sn doped Ga2O3 substrates. Reciprocal space mapping shows a lattice matched (Al0.19Ga0.81)2O3 layer. Both APT and TEM results confirm a sharp β-(Al0.19Ga0.81)2O3/β-Ga2O3 interface. XPS measurements show conduction band offsets of 2.78 ± 0.25 eV and 0.79 ± 0.25 eV between the SiO2/β-(Al0.19Ga0.81)2O3 and β-(Al0.19Ga0.81)2O3/β-Ga2O3 interfaces, respectively. Extracted room temperature Schottky Barrier Heights (SBHs) after zero field correction for Pt, Ni, and Ti were 2.98 ± 0.25 eV, 2.81 ± 0.25 eV, and 1.81 ± 0.25 eV, respectively. The variation of SBHs with metals clearly indicates the dependence on work function.},
doi = {10.1063/1.5113509},
journal = {Journal of Applied Physics},
number = 9,
volume = 126,
place = {United States},
year = {Tue Sep 03 00:00:00 EDT 2019},
month = {Tue Sep 03 00:00:00 EDT 2019}
}
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