Exchange bias and quantum anomalous nomalous Hall effect in the MnBi2Te4/CrI3 heterostructure
Abstract
The layered antiferromagnetic MnBi2Te4films have been proposed to be an intrinsic quantum anomalous Hall (QAH) insulator with a large gap. It is crucial to open a magnetic gap of surface states. However, recent experiments have observed gapless surface states, indicating the absence of out-of-plane surface magnetism, and thus, the quantized Hall resistance can only be achieved at the magnetic field above 6 T. We propose to induce out-of-plane surface magnetism of MnBi2Te4films via the magnetic proximity with magnetic insulator CrI3. A strong exchange bias of ~40 meV originates from the long Cr-egorbital tails that hybridize strongly with Teporbitals. By stabilizing surface magnetism, the QAH effect can be realized in the MnBi2Te4/CrI3heterostructure. Moreover, the high–Chern number QAH state can be achieved by controlling external electric gates. Thus, the MnBi2Te4/CrI3heterostructure provides a promising platform to realize the electrically tunable zero-field QAH effect.
- Authors:
-
[1];
[2];
[1]
- Weizmann Inst. of Science, Rehovot (Israel)
- Pennsylvania State Univ., University Park, PA (United States)
- Publication Date:
- Research Org.:
- Pennsylvania State Univ., University Park, PA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1626055
- Grant/Contract Number:
- SC0019064; N00014-18-1-2793; KA2018-98553; ERC-815869
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Science Advances
- Additional Journal Information:
- Journal Volume: 6; Journal Issue: 10; Journal ID: ISSN 2375-2548
- Publisher:
- AAAS
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Science & Technology - Other Topics
Citation Formats
Fu, Huixia, Liu, Chao-Xing, and Yan, Binghai. Exchange bias and quantum anomalous nomalous Hall effect in the MnBi2Te4/CrI3 heterostructure. United States: N. p., 2020.
Web. doi:10.1126/sciadv.aaz0948.
Fu, Huixia, Liu, Chao-Xing, & Yan, Binghai. Exchange bias and quantum anomalous nomalous Hall effect in the MnBi2Te4/CrI3 heterostructure. United States. https://doi.org/10.1126/sciadv.aaz0948
Fu, Huixia, Liu, Chao-Xing, and Yan, Binghai. Sun .
"Exchange bias and quantum anomalous nomalous Hall effect in the MnBi2Te4/CrI3 heterostructure". United States. https://doi.org/10.1126/sciadv.aaz0948. https://www.osti.gov/servlets/purl/1626055.
@article{osti_1626055,
title = {Exchange bias and quantum anomalous nomalous Hall effect in the MnBi2Te4/CrI3 heterostructure},
author = {Fu, Huixia and Liu, Chao-Xing and Yan, Binghai},
abstractNote = {The layered antiferromagnetic MnBi2Te4films have been proposed to be an intrinsic quantum anomalous Hall (QAH) insulator with a large gap. It is crucial to open a magnetic gap of surface states. However, recent experiments have observed gapless surface states, indicating the absence of out-of-plane surface magnetism, and thus, the quantized Hall resistance can only be achieved at the magnetic field above 6 T. We propose to induce out-of-plane surface magnetism of MnBi2Te4films via the magnetic proximity with magnetic insulator CrI3. A strong exchange bias of ~40 meV originates from the long Cr-egorbital tails that hybridize strongly with Teporbitals. By stabilizing surface magnetism, the QAH effect can be realized in the MnBi2Te4/CrI3heterostructure. Moreover, the high–Chern number QAH state can be achieved by controlling external electric gates. Thus, the MnBi2Te4/CrI3heterostructure provides a promising platform to realize the electrically tunable zero-field QAH effect.},
doi = {10.1126/sciadv.aaz0948},
journal = {Science Advances},
number = 10,
volume = 6,
place = {United States},
year = {Sun Mar 01 00:00:00 EST 2020},
month = {Sun Mar 01 00:00:00 EST 2020}
}
Free Publicly Available Full Text
Publisher's Version of Record
Other availability
Search WorldCat to find libraries that may hold this journal
Cited by: 53 works
Citation information provided by
Web of Science
Web of Science
Figures / Tables:
Fig. 1: The atomic structure of the MnBi2Te4/CrI3 heterostructure. (A) MnBi2Te4 and CrI3 prefers the FM-type coupling, while MnBi2Te4 layers remains the AFM interaction. (B) Schematics of the exchange interaction between Cr-eg and Mn-egt2g states. (C) The Wannier function of one of Cr-eg states. Its tails reach the neighboring Temore »
All figures and tables
(4 total)
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Surface states and Rashba-type spin polarization in antiferromagnetic MnBi 2 Te 4 (0001)
journal, September 2019
- Vidal, R. C.; Bentmann, H.; Peixoto, T. R. F.
- Physical Review B, Vol. 100, Issue 12
Equivalent expression of topological invariant for band insulators using the non-Abelian Berry connection
journal, August 2011
- Yu, Rui; Qi, Xiao Liang; Bernevig, Andrei
- Physical Review B, Vol. 84, Issue 7
The Quantum Anomalous Hall Effect: Theory and Experiment
journal, March 2016
- Liu, Chao-Xing; Zhang, Shou-Cheng; Qi, Xiao-Liang
- Annual Review of Condensed Matter Physics, Vol. 7, Issue 1
High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator
journal, March 2015
- Chang, Cui-Zu; Zhao, Weiwei; Kim, Duk Y.
- Nature Materials, Vol. 14, Issue 5
Dirac Surface States in Intrinsic Magnetic Topological Insulators EuSn 2 As 2 and MnBi 2 n Te 3 n + 1
journal, November 2019
- Li, Hang; Gao, Shun-Ye; Duan, Shao-Feng
- Physical Review X, Vol. 9, Issue 4
Evolution of structural, magnetic, and transport properties in
journal, September 2019
- Yan, J. -Q.; Okamoto, S.; McGuire, M. A.
- Physical Review B, Vol. 100, Issue 10
Stacking-Dependent Magnetism in Bilayer CrI 3
journal, November 2018
- Sivadas, Nikhil; Okamoto, Satoshi; Xu, Xiaodong
- Nano Letters, Vol. 18, Issue 12
Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator
journal, March 2013
- Chang, C. -Z.; Zhang, J.; Feng, X.
- Science, Vol. 340, Issue 6129
Magnetizing topological surface states of Bi 2 Se 3 with a CrI 3 monolayer
journal, May 2019
- Hou, Yusheng; Kim, Jeongwoo; Wu, Ruqian
- Science Advances, Vol. 5, Issue 5
Quantum Anomalous Hall Effect in Quantum Wells
journal, October 2008
- Liu, Chao-Xing; Qi, Xiao-Liang; Dai, Xi
- Physical Review Letters, Vol. 101, Issue 14
Scale-Invariant Quantum Anomalous Hall Effect in Magnetic Topological Insulators beyond the Two-Dimensional Limit
journal, September 2014
- Kou, Xufeng; Guo, Shih-Ting; Fan, Yabin
- Physical Review Letters, Vol. 113, Issue 13
Experimental Realization of an Intrinsic Magnetic Topological Insulator *
journal, June 2019
- Gong, Yan; Guo, Jingwen; Li, Jiaheng
- Chinese Physics Letters, Vol. 36, Issue 7
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996
- Kresse, G.; Furthmüller, J.
- Physical Review B, Vol. 54, Issue 16, p. 11169-11186
Coupling of Crystal Structure and Magnetism in the Layered, Ferromagnetic Insulator CrI 3
journal, January 2015
- McGuire, Michael A.; Dixit, Hemant; Cooper, Valentino R.
- Chemistry of Materials, Vol. 27, Issue 2
Spin scattering and noncollinear spin structure-induced intrinsic anomalous Hall effect in antiferromagnetic topological insulator
journal, August 2019
- Lee, Seng Huat; Zhu, Yanglin; Wang, Yu
- Physical Review Research, Vol. 1, Issue 1
Trajectory of the anomalous Hall effect towards the quantized state in a ferromagnetic topological insulator
journal, August 2014
- Checkelsky, J. G.; Yoshimi, R.; Tsukazaki, A.
- Nature Physics, Vol. 10, Issue 10
Intrinsic magnetic topological insulator phases in the Sb doped MnBi2Te4 bulks and thin flakes
journal, October 2019
- Chen, Bo; Fei, Fucong; Zhang, Dongqin
- Nature Communications, Vol. 10, Issue 1
Quantum anomalous Hall effect in intrinsic magnetic topological insulator MnBi 2 Te 4
journal, January 2020
- Deng, Yujun; Yu, Yijun; Shi, Meng Zhu
- Science, Vol. 367, Issue 6480
Robust axion insulator and Chern insulator phases in a two-dimensional antiferromagnetic topological insulator
journal, January 2020
- Liu, Chang; Wang, Yongchao; Li, Hao
- Nature Materials
Antiferromagnetic topological insulators
journal, June 2010
- Mong, Roger S. K.; Essin, Andrew M.; Moore, Joel E.
- Physical Review B, Vol. 81, Issue 24
Model for a Quantum Hall Effect without Landau Levels: Condensed-Matter Realization of the "Parity Anomaly"
journal, October 1988
- Haldane, F. D. M.
- Physical Review Letters, Vol. 61, Issue 18
Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit
journal, June 2017
- Huang, Bevin; Clark, Genevieve; Navarro-Moratalla, Efrén
- Nature, Vol. 546, Issue 7657
Natural van der Waals heterostructural single crystals with both magnetic and topological properties
journal, November 2019
- Wu, Jiazhen; Liu, Fucai; Sasase, Masato
- Science Advances, Vol. 5, Issue 11
Topological quantization of the spin Hall effect in two-dimensional paramagnetic semiconductors
journal, August 2006
- Qi, Xiao-Liang; Wu, Yong-Shi; Zhang, Shou-Cheng
- Physical Review B, Vol. 74, Issue 8
Topological field theory of time-reversal invariant insulators
journal, November 2008
- Qi, Xiao-Liang; Hughes, Taylor L.; Zhang, Shou-Cheng
- Physical Review B, Vol. 78, Issue 19, Article No. 195424
Wannier representation of topological insulators
journal, January 2011
- Soluyanov, Alexey A.; Vanderbilt, David
- Physical Review B, Vol. 83, Issue 3
Prediction and observation of an antiferromagnetic topological insulator
journal, December 2019
- Otrokov, M. M.; Klimovskikh, I. I.; Bentmann, H.
- Nature, Vol. 576, Issue 7787
Quantum anomalous Hall effect in time-reversal-symmetry breaking topological insulators
journal, March 2016
- Chang, Cui-Zu; Li, Mingda
- Journal of Physics: Condensed Matter, Vol. 28, Issue 12
Suppression of the antiferromagnetic metallic state in the pressurized single crystal
journal, September 2019
- Chen, K. Y.; Wang, B. S.; Yan, J. -Q.
- Physical Review Materials, Vol. 3, Issue 9
Intrinsic magnetic topological insulators in van der Waals layered MnBi 2 Te 4 -family materials
journal, June 2019
- Li, Jiaheng; Li, Yang; Du, Shiqiao
- Science Advances, Vol. 5, Issue 6
Robust intrinsic ferromagnetism and half semiconductivity in stable two-dimensional single-layer chromium trihalides
journal, January 2015
- Zhang, Wei-Bing; Qu, Qian; Zhu, Peng
- Journal of Materials Chemistry C, Vol. 3, Issue 48
Quantized Anomalous Hall Effect in Magnetic Topological Insulators
journal, June 2010
- Yu, R.; Zhang, W.; Zhang, H. -J.
- Science, Vol. 329, Issue 5987
Unique Thickness-Dependent Properties of the van der Waals Interlayer Antiferromagnet Films
journal, March 2019
- Otrokov, M. M.; Rusinov, I. P.; Blanco-Rey, M.
- Physical Review Letters, Vol. 122, Issue 10
Quantum anomalous Hall effect in magnetic topological insulators
journal, August 2015
- Wang, Jing; Lian, Biao; Zhang, Shou-Cheng
- Physica Scripta, Vol. T164
Topological semimetal and Fermi-arc surface states in the electronic structure of pyrochlore iridates
journal, May 2011
- Wan, Xiangang; Turner, Ari M.; Vishwanath, Ashvin
- Physical Review B, Vol. 83, Issue 20
High-Chern-number and high-temperature quantum Hall effect without Landau levels
journal, April 2020
- Ge, Jun; Liu, Yanzhao; Li, Jiaheng
- National Science Review, Vol. 7, Issue 8
Gapless Dirac surface states in the antiferromagnetic topological insulator
journal, April 2020
- Swatek, Przemyslaw; Wu, Yun; Wang, Lin-Lin
- Physical Review B, Vol. 101, Issue 16
Magnetizing topological surface states of Bi 2 Se 3 with a CrI 3 monolayer
journal, May 2019
- Hou, Yusheng; Kim, Jeongwoo; Wu, Ruqian
- Science Advances, Vol. 5, Issue 5
Two paths to intrinsic quantization
journal, February 2020
- Wakefield, Joshua P.; Checkelsky, Joseph G.
- Science, Vol. 367, Issue 6480
Quantum Anomalous Hall Effect in Time-Reversal-Symmetry Breaking Topological Insulators
text, January 2015
- Chang, Cui-Zu; Li, Mingda
- arXiv
Figures / Tables found in this record:
Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.