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Title: Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures

Abstract

Magnetoelectric effect, arising from the interfacial coupling between magnetic and electrical order parameters, has recently emerged as a robust means to electrically manipulate the magnetic properties in multiferroic heterostructures. Challenge remains as finding an energy efficient way to modify the distinct magnetic states in a reliable, reversible and non-volatile manner. Here we report ferroelectric switching of ferromagnetic resonance in multiferroic bilayers consisting of ultrathin ferromagnetic NiFe and ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films, where the magnetic anisotropy of NiFe can be electrically modified by low voltages. Ferromagnetic resonance measurements confirm that the interfacial charge-mediated magnetoelectric effect is dominant in NiFe/PLZT heterostructures. Non-volatile modification of ferromagnetic resonance field is demonstrated by applying voltage pulses. The ferroelectric switching of magnetic anisotropy exhibits extensive applications in energy-efficient electronic devices such as magnetoelectric random access memories, magnetic field sensors and tunable radio frequency (RF)/microwave devices.

Authors:
 [1];  [2];  [2];  [3];  [4];  [2];  [5];  [5];  [5];  [2];  [2];  [2];  [2];  [2];  [2];  [2];  [2];  [2];  [6];  [2]
+ Show Author Affiliations
  1. Northeastern Univ., Dept. of Computer and Electrical Engineering, Boston, MA (United States); Air Force Research Lab. (AFRL), Wright-Patterson AFB, OH (United States)
  2. Northeastern Univ., Department of Electrical and Computer Engineering, Boston, MA (United States)
  3. Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi’an Jiaotong University, Xi’an, 710049, China
  4. Argonne National Laboratory, Energy Systems Division, Argonne, 60439, Illinois, USA
  5. Air Force Research Lab. (AFRL), Materials and Manufacturing Directorate, Wright-Patterson AFB, OH (United States)
  6. Xi’an Jiaotong Univ. (China)
Publication Date:
Research Org.:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Vehicle Technologies Program; National Science Foundation (NSF); NSF Nanosystems Engineering Research Center for Translational Applications of Nanoscale Multiferroic Systems (TANMS); W.M. Keck Foundation; US Air Force Office of Scientific Research (AFOSR)
OSTI Identifier:
1624851
Grant/Contract Number:  
AC02-06CH11357; 1160504; FA8650-14-C-5706
Resource Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 6; Journal Issue: 1; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; science & technology; electronic devices; ferroelectrics and multiferroics

Citation Formats

Hu, Zhongqiang, Wang, Xinjun, Nan, Tianxiang, Zhou, Ziyao, Ma, Beihai, Chen, Xiaoqin, Jones, John G., Howe, Brandon M., Brown, Gail J., Gao, Yuan, Lin, Hwaider, Wang, Zhiguang, Guo, Rongdi, Chen, Shuiyuan, Shi, Xiaoling, Shi, Wei, Sun, Hongzhi, Budil, David, Liu, Ming, and Sun, Nian X. Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures. United States: N. p., 2016. Web. doi:10.1038/srep32408.
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Hu, Zhongqiang, Wang, Xinjun, Nan, Tianxiang, Zhou, Ziyao, Ma, Beihai, Chen, Xiaoqin, Jones, John G., Howe, Brandon M., Brown, Gail J., Gao, Yuan, Lin, Hwaider, Wang, Zhiguang, Guo, Rongdi, Chen, Shuiyuan, Shi, Xiaoling, Shi, Wei, Sun, Hongzhi, Budil, David, Liu, Ming, & Sun, Nian X. Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures. United States. https://doi.org/10.1038/srep32408
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Hu, Zhongqiang, Wang, Xinjun, Nan, Tianxiang, Zhou, Ziyao, Ma, Beihai, Chen, Xiaoqin, Jones, John G., Howe, Brandon M., Brown, Gail J., Gao, Yuan, Lin, Hwaider, Wang, Zhiguang, Guo, Rongdi, Chen, Shuiyuan, Shi, Xiaoling, Shi, Wei, Sun, Hongzhi, Budil, David, Liu, Ming, and Sun, Nian X. Thu . "Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures". United States. https://doi.org/10.1038/srep32408. https://www.osti.gov/servlets/purl/1624851.
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@article{osti_1624851,
title = {Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures},
author = {Hu, Zhongqiang and Wang, Xinjun and Nan, Tianxiang and Zhou, Ziyao and Ma, Beihai and Chen, Xiaoqin and Jones, John G. and Howe, Brandon M. and Brown, Gail J. and Gao, Yuan and Lin, Hwaider and Wang, Zhiguang and Guo, Rongdi and Chen, Shuiyuan and Shi, Xiaoling and Shi, Wei and Sun, Hongzhi and Budil, David and Liu, Ming and Sun, Nian X.},
abstractNote = {Magnetoelectric effect, arising from the interfacial coupling between magnetic and electrical order parameters, has recently emerged as a robust means to electrically manipulate the magnetic properties in multiferroic heterostructures. Challenge remains as finding an energy efficient way to modify the distinct magnetic states in a reliable, reversible and non-volatile manner. Here we report ferroelectric switching of ferromagnetic resonance in multiferroic bilayers consisting of ultrathin ferromagnetic NiFe and ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films, where the magnetic anisotropy of NiFe can be electrically modified by low voltages. Ferromagnetic resonance measurements confirm that the interfacial charge-mediated magnetoelectric effect is dominant in NiFe/PLZT heterostructures. Non-volatile modification of ferromagnetic resonance field is demonstrated by applying voltage pulses. The ferroelectric switching of magnetic anisotropy exhibits extensive applications in energy-efficient electronic devices such as magnetoelectric random access memories, magnetic field sensors and tunable radio frequency (RF)/microwave devices.},
doi = {10.1038/srep32408},
journal = {Scientific Reports},
number = 1,
volume = 6,
place = {United States},
year = {Thu Sep 01 00:00:00 EDT 2016},
month = {Thu Sep 01 00:00:00 EDT 2016}
}
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https://doi.org/10.1038/srep32408
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    Reversible Modification of Ferromagnetism through Electrically Controlled Morphology
    journal, April 2019

    • Vinai, Giovanni; Motti, Federico; Bonanni, Valentina
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    Probing the dielectric, piezoelectric and magnetic behavior of CoFe2O4/BNT-BT0.08 composite thin film fabricated by sol-gel and spin-coating methods
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    Ferromagnetic resonance manipulation by electric fields in Ni 81 Fe 19 /Bi 3.15 Nd 0.85 Ti 2.99 Mn 0.01 O 12 multiferroic heterostructures
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    Probing the dielectric, piezoelectric and magnetic behavior of CoFe2O4/BNT-BT0.08 composite thin film fabricated by sol-gel and spin-coating methods
    journal, December 2018

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