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Title: Determination of background doping polarity of unintentionally doped semiconductor layers

Abstract

Here, we present a method of determining the background doping type in semiconductors using capacitance–voltage measurements on overetched double mesa p–i–n or n–i–p structures. Unlike Hall measurements, this method is not limited by the conductivity of the substrate. By measuring the capacitance of devices with varying top and bottom mesa sizes, we were able to conclusively determine which mesa contained the p–n junction, revealing the polarity of the intrinsic layer. This method, when demonstrated on GaSb p–i–n and n–i–p structures, concluded that the material is residually doped p-type, which is well established by other sources. The method was then applied to a 10 monolayer InAs/10 monolayer AlSb superlattice, for which the doping polarity was unknown, and indicated that this material is also p-type.

Authors:
 [1];  [1];  [1];  [1]; ORCiD logo [1];  [2];  [2];  [3];  [3];  [4]; ORCiD logo [1]
+ Show Author Affiliations
  1. The Ohio State Univ., Columbus, OH (United States)
  2. Univ. of Illinois, Chicago, IL (United States)
  3. Univ. of Virginia, Charlottesville, VA (United States)
  4. Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1617309
Report Number(s):
SAND-2019-15119J
Journal ID: ISSN 0003-6951; 682173; TRN: US2200921
Grant/Contract Number:  
AC04-94AL85000; NA0003525
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 116; Journal Issue: 7; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Fink, D. R., Lee, S., Kodati, S. H., Rogers, V., Ronningen, T. J., Winslow, M., Grein, C. H., Jones, A. H., Campbell, J. C., Klem, J. F., and Krishna, S. Determination of background doping polarity of unintentionally doped semiconductor layers. United States: N. p., 2020. Web. doi:10.1063/1.5142377.
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Fink, D. R., Lee, S., Kodati, S. H., Rogers, V., Ronningen, T. J., Winslow, M., Grein, C. H., Jones, A. H., Campbell, J. C., Klem, J. F., & Krishna, S. Determination of background doping polarity of unintentionally doped semiconductor layers. United States. https://doi.org/10.1063/1.5142377
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Fink, D. R., Lee, S., Kodati, S. H., Rogers, V., Ronningen, T. J., Winslow, M., Grein, C. H., Jones, A. H., Campbell, J. C., Klem, J. F., and Krishna, S. Wed . "Determination of background doping polarity of unintentionally doped semiconductor layers". United States. https://doi.org/10.1063/1.5142377. https://www.osti.gov/servlets/purl/1617309.
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@article{osti_1617309,
title = {Determination of background doping polarity of unintentionally doped semiconductor layers},
author = {Fink, D. R. and Lee, S. and Kodati, S. H. and Rogers, V. and Ronningen, T. J. and Winslow, M. and Grein, C. H. and Jones, A. H. and Campbell, J. C. and Klem, J. F. and Krishna, S.},
abstractNote = {Here, we present a method of determining the background doping type in semiconductors using capacitance–voltage measurements on overetched double mesa p–i–n or n–i–p structures. Unlike Hall measurements, this method is not limited by the conductivity of the substrate. By measuring the capacitance of devices with varying top and bottom mesa sizes, we were able to conclusively determine which mesa contained the p–n junction, revealing the polarity of the intrinsic layer. This method, when demonstrated on GaSb p–i–n and n–i–p structures, concluded that the material is residually doped p-type, which is well established by other sources. The method was then applied to a 10 monolayer InAs/10 monolayer AlSb superlattice, for which the doping polarity was unknown, and indicated that this material is also p-type.},
doi = {10.1063/1.5142377},
journal = {Applied Physics Letters},
number = 7,
volume = 116,
place = {United States},
year = {Wed Feb 19 00:00:00 EST 2020},
month = {Wed Feb 19 00:00:00 EST 2020}
}
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https://doi.org/10.1063/1.5142377
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