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Title: Erratum: “History of atomic layer deposition and its relationship with the American Vacuum Society” [J. Vac. Sci. Technol. A 31, 050818 (2013)]

Abstract

The authors of this review article published in 20131 would like to correct some text and references relating to the first observations and publications on molecular layering. In Sec. II, “Early Years of Atomic Layer Processes” in the original article,1 the first two sentences of the fourth paragraph should instead say “The ALD principle, where surface reactions follow a binary sequence of self-limiting half-reactions, was reported under the name ‘molecular layering’ in the 1960s by S. I. Kol’tsov from Leningrad Technological Institute.2–6 These experiments were conducted under the scientific supervision of V. B. Aleskovskii. The ‘framework hypothesis,’ an antecedent to molecular layering, was proposed by V. B. Aleskovskii in 1952.6” In addition, again in this same section and paragraph, the last two sentences should instead say “In the 1969 article,3 the authors report that the initial reaction between TiCl4 and Si–OH tends to involve 3 Si–OH, forming one Ti–Cl, whereas after the first water step, the second TiCl4 exposure reacts with 2 Ti–OH, forming Ti–Cl2 groups. In the 1969 paper,3 a planar thin film was not produced or evaluated, although nanolayers were prepared by molecular layering at that time.6” These corrections do not affect other sections or the conclusions drawnmore » in the article.« less

Authors:
ORCiD logo [1];  [2]; ORCiD logo [3];  [4]; ORCiD logo [5]; ORCiD logo [6]; ORCiD logo [7];  [8]; ORCiD logo [7];  [9]
  1. North Carolina State Univ., Raleigh, NC (United States)
  2. Argonne National Lab. (ANL), Argonne, IL (United States)
  3. Univ. of Colorado, Boulder, CO (United States)
  4. ASM Microchemistry Ltd., Helsinki (Finland)
  5. Hanyang Univ., Seoul (Korea, Republic of)
  6. ( [Eindhoven Univ. of Technology (Netherlands)
  7. Univ. of Helsinki (Finland)
  8. Holst Centre (The Netherlands)
  9. IBM TJ Watson Research Center, Yorktown Heights, NY (United States)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division
OSTI Identifier:
1616689
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Vacuum Science and Technology A
Additional Journal Information:
Journal Volume: 38; Journal Issue: 3; Journal ID: ISSN 0734-2101
Publisher:
American Vacuum Society / AIP
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; Atomic layer deposition; Nanomaterials; Surface and interface chemistry; Thin films

Citation Formats

Parsons, Gregory N., Elam, Jeffrey W., George, Steven M., Haukka, Suvi, Jeon, Hyeongtag, Erwin) Kessels, W. M., Leskelä, Markku, Poodt, Paul, Ritala, Mikko, and Rossnagel, Steven M. Erratum: “History of atomic layer deposition and its relationship with the American Vacuum Society” [J. Vac. Sci. Technol. A 31, 050818 (2013)]. United States: N. p., 2020. Web. doi:10.1116/6.0000143.
Parsons, Gregory N., Elam, Jeffrey W., George, Steven M., Haukka, Suvi, Jeon, Hyeongtag, Erwin) Kessels, W. M., Leskelä, Markku, Poodt, Paul, Ritala, Mikko, & Rossnagel, Steven M. Erratum: “History of atomic layer deposition and its relationship with the American Vacuum Society” [J. Vac. Sci. Technol. A 31, 050818 (2013)]. United States. https://doi.org/10.1116/6.0000143
Parsons, Gregory N., Elam, Jeffrey W., George, Steven M., Haukka, Suvi, Jeon, Hyeongtag, Erwin) Kessels, W. M., Leskelä, Markku, Poodt, Paul, Ritala, Mikko, and Rossnagel, Steven M. Thu . "Erratum: “History of atomic layer deposition and its relationship with the American Vacuum Society” [J. Vac. Sci. Technol. A 31, 050818 (2013)]". United States. https://doi.org/10.1116/6.0000143. https://www.osti.gov/servlets/purl/1616689.
@article{osti_1616689,
title = {Erratum: “History of atomic layer deposition and its relationship with the American Vacuum Society” [J. Vac. Sci. Technol. A 31, 050818 (2013)]},
author = {Parsons, Gregory N. and Elam, Jeffrey W. and George, Steven M. and Haukka, Suvi and Jeon, Hyeongtag and Erwin) Kessels, W. M. and Leskelä, Markku and Poodt, Paul and Ritala, Mikko and Rossnagel, Steven M.},
abstractNote = {The authors of this review article published in 20131 would like to correct some text and references relating to the first observations and publications on molecular layering. In Sec. II, “Early Years of Atomic Layer Processes” in the original article,1 the first two sentences of the fourth paragraph should instead say “The ALD principle, where surface reactions follow a binary sequence of self-limiting half-reactions, was reported under the name ‘molecular layering’ in the 1960s by S. I. Kol’tsov from Leningrad Technological Institute.2–6 These experiments were conducted under the scientific supervision of V. B. Aleskovskii. The ‘framework hypothesis,’ an antecedent to molecular layering, was proposed by V. B. Aleskovskii in 1952.6” In addition, again in this same section and paragraph, the last two sentences should instead say “In the 1969 article,3 the authors report that the initial reaction between TiCl4 and Si–OH tends to involve 3 Si–OH, forming one Ti–Cl, whereas after the first water step, the second TiCl4 exposure reacts with 2 Ti–OH, forming Ti–Cl2 groups. In the 1969 paper,3 a planar thin film was not produced or evaluated, although nanolayers were prepared by molecular layering at that time.6” These corrections do not affect other sections or the conclusions drawn in the article.},
doi = {10.1116/6.0000143},
journal = {Journal of Vacuum Science and Technology A},
number = 3,
volume = 38,
place = {United States},
year = {Thu Mar 12 00:00:00 EDT 2020},
month = {Thu Mar 12 00:00:00 EDT 2020}
}

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