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Title: van der Waals epitaxy of highly (111)-oriented BaTiO3 on MXene

Abstract

Here, we report on the high temperature thin film growth of BaTiO3 on Ti3C2Tx MXene flakes using van der Waals epitaxy on a degradable template layer. MXene was deposited on amorphous and crystalline substrates by spray- and dip-coating techniques, while the growth of BaTiO3 at 700 °C was accomplished using pulsed laser deposition in an oxygen rich environment. We demonstrate that the MXene flakes act as a temporary seed layer, which promotes highly oriented BaTiO3 growth along the (111) direction independent of the underlying substrate. The lattice parameters of the BaTiO3 films are close to the bulk value suggesting that the BaTiO3 films remains unstrained, as expected for van der Waals epitaxy. The initial size of the MXene flakes has an impact on the orientation of the BaTiO3 films with larger flake sizes promoting a higher fraction of the polycrystalline film to grow along the (111) direction. The deposited BaTiO3 film adopts the same morphology as the original flakes and piezoresponse force microscopy shows a robust ferroelectric behavior for individual grains. Transmission electron microscopy results indicate that the Ti3C2Tx MXene fully decomposes during the BaTiO3 deposition and the surplus Ti atoms are readily incorporated into the BaTiO3 film. Electrical measurementsmore » show a similar dielectric constant as a BaTiO3 film grown without the MXene seed layer. The demonstrated process has the potential to overcome the longstanding issue of integrating highly oriented complex oxide thin films directly on any desired substrate.« less

Authors:
ORCiD logo [1];  [1]; ORCiD logo [1];  [1]; ORCiD logo [1];  [1];  [1];  [1]; ORCiD logo [2]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]
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  1. Drexel Univ., Philadelphia, PA (United States)
  2. Univ. of Pennsylvania, Philadelphia, PA (United States)
Publication Date:
Research Org.:
Drexel Univ., Philadelphia, PA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); US Department of the Navy, Office of Naval Research (ONR); US Army Research Office (ARO); National Science Foundation (NSF)
OSTI Identifier:
1613001
Alternate Identifier(s):
OSTI ID: 1487296
Grant/Contract Number:  
SC0018618; N00014-15-11-2170; W911NF-14-1-0500; FA9550-13-1-0124; DMR-1608887; NNCI-1542153
Resource Type:
Accepted Manuscript
Journal Name:
Nanoscale
Additional Journal Information:
Journal Volume: 11; Journal Issue: 2; Journal ID: ISSN 2040-3364
Publisher:
Royal Society of Chemistry
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; chemistry; science & technology; materials science; physics

Citation Formats

Bennett-Jackson, Andrew L., Falmbigl, Matthias, Hantanasirisakul, Kanit, Gu, Zongquan, Imbrenda, Dominic, Plokhikh, Aleksandr V., Will-Cole, Alexandria, Hatter, Christine, Wu, Liyan, Anasori, Babak, Gogotsi, Yury, and Spanier, Jonathan E. van der Waals epitaxy of highly (111)-oriented BaTiO3 on MXene. United States: N. p., 2018. Web. doi:10.1039/c8nr07140c.
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Bennett-Jackson, Andrew L., Falmbigl, Matthias, Hantanasirisakul, Kanit, Gu, Zongquan, Imbrenda, Dominic, Plokhikh, Aleksandr V., Will-Cole, Alexandria, Hatter, Christine, Wu, Liyan, Anasori, Babak, Gogotsi, Yury, & Spanier, Jonathan E. van der Waals epitaxy of highly (111)-oriented BaTiO3 on MXene. United States. https://doi.org/10.1039/c8nr07140c
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Bennett-Jackson, Andrew L., Falmbigl, Matthias, Hantanasirisakul, Kanit, Gu, Zongquan, Imbrenda, Dominic, Plokhikh, Aleksandr V., Will-Cole, Alexandria, Hatter, Christine, Wu, Liyan, Anasori, Babak, Gogotsi, Yury, and Spanier, Jonathan E. Tue . "van der Waals epitaxy of highly (111)-oriented BaTiO3 on MXene". United States. https://doi.org/10.1039/c8nr07140c. https://www.osti.gov/servlets/purl/1613001.
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@article{osti_1613001,
title = {van der Waals epitaxy of highly (111)-oriented BaTiO3 on MXene},
author = {Bennett-Jackson, Andrew L. and Falmbigl, Matthias and Hantanasirisakul, Kanit and Gu, Zongquan and Imbrenda, Dominic and Plokhikh, Aleksandr V. and Will-Cole, Alexandria and Hatter, Christine and Wu, Liyan and Anasori, Babak and Gogotsi, Yury and Spanier, Jonathan E.},
abstractNote = {Here, we report on the high temperature thin film growth of BaTiO3 on Ti3C2Tx MXene flakes using van der Waals epitaxy on a degradable template layer. MXene was deposited on amorphous and crystalline substrates by spray- and dip-coating techniques, while the growth of BaTiO3 at 700 °C was accomplished using pulsed laser deposition in an oxygen rich environment. We demonstrate that the MXene flakes act as a temporary seed layer, which promotes highly oriented BaTiO3 growth along the (111) direction independent of the underlying substrate. The lattice parameters of the BaTiO3 films are close to the bulk value suggesting that the BaTiO3 films remains unstrained, as expected for van der Waals epitaxy. The initial size of the MXene flakes has an impact on the orientation of the BaTiO3 films with larger flake sizes promoting a higher fraction of the polycrystalline film to grow along the (111) direction. The deposited BaTiO3 film adopts the same morphology as the original flakes and piezoresponse force microscopy shows a robust ferroelectric behavior for individual grains. Transmission electron microscopy results indicate that the Ti3C2Tx MXene fully decomposes during the BaTiO3 deposition and the surplus Ti atoms are readily incorporated into the BaTiO3 film. Electrical measurements show a similar dielectric constant as a BaTiO3 film grown without the MXene seed layer. The demonstrated process has the potential to overcome the longstanding issue of integrating highly oriented complex oxide thin films directly on any desired substrate.},
doi = {10.1039/c8nr07140c},
journal = {Nanoscale},
number = 2,
volume = 11,
place = {United States},
year = {Tue Dec 18 00:00:00 EST 2018},
month = {Tue Dec 18 00:00:00 EST 2018}
}
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https://doi.org/10.1039/c8nr07140c
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Works referenced in this record:

Composite domain walls in a multiferroic perovskite ferrite
journal, June 2009

  • Tokunaga, Yusuke; Furukawa, Nobuo; Sakai, Hideaki
  • Nature Materials, Vol. 8, Issue 7
  • DOI: 10.1038/nmat2469

Properties of epitaxial SrRuO 3 thin films
journal, May 1993

  • Wu, X. D.; Foltyn, S. R.; Dye, R. C.
  • Applied Physics Letters, Vol. 62, Issue 19
  • DOI: 10.1063/1.109388

Highly Oriented SrTiO 3 Thin Film on Graphene Substrate
journal, January 2017

  • Lee, Sang A.; Hwang, Jae-Yeol; Kim, Eun Sung
  • ACS Applied Materials & Interfaces, Vol. 9, Issue 4
  • DOI: 10.1021/acsami.6b12258

Growth of SrTiO 3 on Si(001) by hybrid molecular beam epitaxy : Growth of SrTiO
journal, September 2014

  • Zhang, Lei; Engel-Herbert, Roman
  • physica status solidi (RRL) - Rapid Research Letters, Vol. 8, Issue 11
  • DOI: 10.1002/pssr.201409383

Resonant domain-wall-enhanced tunable microwave ferroelectrics
journal, August 2018

Crystalline Oxides on Silicon: The First Five Monolayers
journal, October 1998

Power conversion efficiency exceeding the Shockley–Queisser limit in a ferroelectric insulator
journal, August 2016

  • Spanier, Jonathan E.; Fridkin, Vladimir M.; Rappe, Andrew M.
  • Nature Photonics, Vol. 10, Issue 9
  • DOI: 10.1038/nphoton.2016.143

Misfit strain accommodation in epitaxial A B O 3 perovskites: Lattice rotations and lattice modulations
journal, February 2011

Mesoscopic Free Path of Nonthermalized Photogenerated Carriers in a Ferroelectric Insulator
journal, March 2017

Pyroelectric energy conversion with large energy and power density in relaxor ferroelectric thin films
journal, April 2018

Epitaxy of Y‐Ba‐Cu‐O thin films grown on single‐crystal MgO
journal, May 1990

  • Ramesh, R.; Hwang, D.; Ravi, T. S.
  • Applied Physics Letters, Vol. 56, Issue 22
  • DOI: 10.1063/1.102932

Surface symmetry-breaking and strain effects on orbital occupancy in transition metal perovskite epitaxial films
journal, January 2012

  • Pesquera, D.; Herranz, G.; Barla, A.
  • Nature Communications, Vol. 3, Issue 1
  • DOI: 10.1038/ncomms2189

Dielectric properties of epitaxial BaTiO3 thin films
journal, October 1998

  • Hoerman, B. H.; Ford, G. M.; Kaufmann, L. D.
  • Applied Physics Letters, Vol. 73, Issue 16
  • DOI: 10.1063/1.121691

Ultrastructural Characterization of the Lower Motor System in a Mouse Model of Krabbe Disease
journal, December 2016

Intercalation and delamination of layered carbides and carbonitrides
journal, April 2013

  • Mashtalir, Olha; Naguib, Michael; Mochalin, Vadym N.
  • Nature Communications, Vol. 4, Issue 1
  • DOI: 10.1038/ncomms2664

Influence of laser repetition rate on ferroelectric properties of pulsed laser deposited BaTiO3 films on platinized silicon substrate
journal, September 2013

Conduction at domain walls in oxide multiferroics
journal, January 2009

  • Seidel, J.; Martin, L. W.; He, Q.
  • Nature Materials, Vol. 8, Issue 3
  • DOI: 10.1038/nmat2373

Epitaxial oxide thin films on Si(001)
journal, January 2000

  • Yu, Z.; Ramdani, J.; Curless, J. A.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 18, Issue 4
  • DOI: 10.1116/1.1303737

Towards van der Waals Epitaxial Growth of GaAs on Si using a Graphene Buffer Layer
journal, August 2014

  • Alaskar, Yazeed; Arafin, Shamsul; Wickramaratne, Darshana
  • Advanced Functional Materials, Vol. 24, Issue 42
  • DOI: 10.1002/adfm.201400960

Efficient Photovoltaic Current Generation at Ferroelectric Domain Walls
journal, September 2011

Ferroelectric polarization reversal via successive ferroelastic transitions
journal, October 2014

  • Xu, Ruijuan; Liu, Shi; Grinberg, Ilya
  • Nature Materials, Vol. 14, Issue 1
  • DOI: 10.1038/nmat4119

Structural, electronic, and magnetic properties of Sr Ru O 3 under epitaxial strain
journal, September 2006

Characteristics of BaTiO 3 Films Prepared by Pulsed Laser Deposition
journal, December 1993

  • Cheng, Hsiu-Fung; Yeh, Ming-Hua; Liu, Kuo-Shung
  • Japanese Journal of Applied Physics, Vol. 32, Issue Part 1, No. 12A
  • DOI: 10.1143/JJAP.32.5656

Scaling Effects in Perovskite Ferroelectrics: Fundamental Limits and Process-Structure-Property Relations
journal, July 2016

  • Ihlefeld, Jon F.; Harris, David T.; Keech, Ryan
  • Journal of the American Ceramic Society, Vol. 99, Issue 8
  • DOI: 10.1111/jace.14387

A review of molecular beam epitaxy of ferroelectric BaTiO 3 films on Si, Ge and GaAs substrates and their applications
journal, June 2015

  • Mazet, Lucie; Yang, Sang Mo; Kalinin, Sergei V.
  • Science and Technology of Advanced Materials, Vol. 16, Issue 3
  • DOI: 10.1088/1468-6996/16/3/036005

Fabrication of Ti 3 C 2 T x MXene Transparent Thin Films with Tunable Optoelectronic Properties
journal, April 2016

  • Hantanasirisakul, Kanit; Zhao, Meng-Qiang; Urbankowski, Patrick
  • Advanced Electronic Materials, Vol. 2, Issue 6
  • DOI: 10.1002/aelm.201600050

BaTiO 3 -based piezoelectrics: Fundamentals, current status, and perspectives
journal, December 2017

  • Acosta, M.; Novak, N.; Rojas, V.
  • Applied Physics Reviews, Vol. 4, Issue 4
  • DOI: 10.1063/1.4990046

Oriented Film Growth of Ba 1– x Sr x TiO 3 Dielectrics on Glass Substrates Using 2D Nanosheet Seed Layer
journal, May 2013

  • Jung, Chulho; Ohnishi, Tsuyoshi; Osada, Minoru
  • ACS Applied Materials & Interfaces, Vol. 5, Issue 11
  • DOI: 10.1021/am400849z

Lattice, elastic, polarization, and electrostrictive properties of BaTiO3 from first-principles
journal, August 2010

  • Wang, J. J.; Meng, F. Y.; Ma, X. Q.
  • Journal of Applied Physics, Vol. 108, Issue 3
  • DOI: 10.1063/1.3462441

Active Silicon Integrated Nanophotonics: Ferroelectric BaTiO 3 Devices
journal, February 2014

  • Xiong, Chi; Pernice, Wolfram H. P.; Ngai, Joseph H.
  • Nano Letters, Vol. 14, Issue 3
  • DOI: 10.1021/nl404513p

Effect of Synthesis on Quality, Electronic Properties and Environmental Stability of Individual Monolayer Ti 3 C 2 MXene Flakes
journal, November 2016

  • Lipatov, Alexey; Alhabeb, Mohamed; Lukatskaya, Maria R.
  • Advanced Electronic Materials, Vol. 2, Issue 12
  • DOI: 10.1002/aelm.201600255

Ferroelectric properties in thin film barium titanate grown using pulsed laser deposition
journal, September 2014

  • Appleby, Daniel J. R.; Ponon, Nikhil K.; Kwa, Kelvin S. K.
  • Journal of Applied Physics, Vol. 116, Issue 12
  • DOI: 10.1063/1.4895050

‘A’ cation control of perovskite properties
journal, September 2002

Fabrication of Anatase Thin Film with Perfect c -Axis Orientation on Glass Substrate Promoted by a Two-Dimensional Perovskite Nanosheet Seed Layer
journal, August 2010

  • Shibata, Tatsuo; Ebina, Yasuo; Ohnishi, Tsuyoshi
  • Crystal Growth & Design, Vol. 10, Issue 8
  • DOI: 10.1021/cg1006204

Lead-free ferroelectric BaTiO3 doped-(Na0.5Bi0.5)TiO3 thin films processed by pulsed laser deposition technique
journal, September 2011

2D metal carbides and nitrides (MXenes) for energy storage
journal, January 2017

Topological phases in oxide heterostructures with light and heavy transition metal ions (invited)
journal, May 2015

  • Fiete, Gregory A.; Rüegg, Andreas
  • Journal of Applied Physics, Vol. 117, Issue 17
  • DOI: 10.1063/1.4913933

Van der Waals epitaxy—a new epitaxial growth method for a highly lattice-mismatched system
journal, August 1992

Preparation of epitaxial hexagonal YMnO3 thin films and observation of ferroelectric vortex domains
journal, October 2016

Effect of surface charges on the polarization of BaTiO 3 thin films investigated by UHV ‐ SPM
journal, May 2018

  • Suzuki, Keigo; Hosokura, Tadasu; Okamoto, Takafumi
  • Journal of the American Ceramic Society, Vol. 101, Issue 10
  • DOI: 10.1111/jace.15734

Evidence of domain wall contribution to the dielectric permittivity in PZT thin films at sub-switching fields
journal, August 1997

  • Taylor, D. V.; Damjanovic, D.
  • Journal of Applied Physics, Vol. 82, Issue 4
  • DOI: 10.1063/1.366006

Epitaxial BiFeO3 Multiferroic Thin Film Heterostructures
journal, March 2003

One-Nanometer-Thick Seed Layer of Unilamellar Nanosheets Promotes Oriented Growth of Oxide Crystal Films
journal, January 2008

Carrier density modulation in a germanium heterostructure by ferroelectric switching
journal, January 2015

  • Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.
  • Nature Communications, Vol. 6, Issue 1
  • DOI: 10.1038/ncomms7067

van der Waals Epitaxy of MoS2 Layers Using Graphene As Growth Templates
journal, May 2012

  • Shi, Yumeng; Zhou, Wu; Lu, Ang-Yu
  • Nano Letters, Vol. 12, Issue 6, p. 2784-2791
  • DOI: 10.1021/nl204562j

Active silicon integrated nanophotonics: ferroelectric BaTiO3 devices
text, January 2014

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