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Title: Effect of illumination on quantum lifetime in GaAs quantum wells

Abstract

Low-temperature illumination of a two-dimensional electron gas in GaAs quantum wells is known to greatly improve the quality of high-field magnetotransport. The improvement is known to occur even when the carrier density and mobility remain unchanged, but what exactly causes it remains unclear. Here, we investigate the effect of illumination on microwave photoresistance in low magnetic fields. We find that the amplitude of microwave-induced resistance oscillations grows dramatically after illumination. Furthermore, dingle analysis reveals that this growth reflects a substantial increase in the single-particle (quantum) lifetime, which likely originates from the light-induced redistribution of charge enhancing the screening capability of the doping layers.

Authors:
 [1];  [1];  [1];  [1];  [2];  [3];  [3];  [4];  [4];  [4]
+ Show Author Affiliations
  1. Univ. of Minnesota, Minneapolis, MN (United States)
  2. Purdue Univ., West Lafayette, IN (United States); Delft Univ. of Technology (Netherlands)
  3. Purdue Univ., West Lafayette, IN (United States)
  4. Princeton Univ., NJ (United States)
Publication Date:
Research Org.:
Univ. of Minnesota, Minneapolis, MN (United States); Purdue Univ., West Lafayette, IN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); Gordon and Betty Moore Foundation; National Science Foundation MRSEC
OSTI Identifier:
1610713
Alternate Identifier(s):
OSTI ID: 1480888
Grant/Contract Number:  
SC0002567; SC0006671; GBMF 4420; DMR-1420541; ER 46640-SC0002567
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 98; Journal Issue: 19; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Materials science; Physics; Electrical conductivity; Semiconductors; Solid-solid interfaces; Quantum oscillation techniques

Citation Formats

Fu, X., Riedl, A., Borisov, M., Zudov, M. A., Watson, J. D., Gardner, G., Manfra, M. J., Baldwin, K. W., Pfeiffer, L. N., and West, K. W. Effect of illumination on quantum lifetime in GaAs quantum wells. United States: N. p., 2018. Web. doi:10.1103/physrevb.98.195403.
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Fu, X., Riedl, A., Borisov, M., Zudov, M. A., Watson, J. D., Gardner, G., Manfra, M. J., Baldwin, K. W., Pfeiffer, L. N., & West, K. W. Effect of illumination on quantum lifetime in GaAs quantum wells. United States. https://doi.org/10.1103/physrevb.98.195403
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Fu, X., Riedl, A., Borisov, M., Zudov, M. A., Watson, J. D., Gardner, G., Manfra, M. J., Baldwin, K. W., Pfeiffer, L. N., and West, K. W. Mon . "Effect of illumination on quantum lifetime in GaAs quantum wells". United States. https://doi.org/10.1103/physrevb.98.195403. https://www.osti.gov/servlets/purl/1610713.
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@article{osti_1610713,
title = {Effect of illumination on quantum lifetime in GaAs quantum wells},
author = {Fu, X. and Riedl, A. and Borisov, M. and Zudov, M. A. and Watson, J. D. and Gardner, G. and Manfra, M. J. and Baldwin, K. W. and Pfeiffer, L. N. and West, K. W.},
abstractNote = {Low-temperature illumination of a two-dimensional electron gas in GaAs quantum wells is known to greatly improve the quality of high-field magnetotransport. The improvement is known to occur even when the carrier density and mobility remain unchanged, but what exactly causes it remains unclear. Here, we investigate the effect of illumination on microwave photoresistance in low magnetic fields. We find that the amplitude of microwave-induced resistance oscillations grows dramatically after illumination. Furthermore, dingle analysis reveals that this growth reflects a substantial increase in the single-particle (quantum) lifetime, which likely originates from the light-induced redistribution of charge enhancing the screening capability of the doping layers.},
doi = {10.1103/physrevb.98.195403},
journal = {Physical Review B},
number = 19,
volume = 98,
place = {United States},
year = {Mon Nov 05 00:00:00 EST 2018},
month = {Mon Nov 05 00:00:00 EST 2018}
}
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Journal Article:
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Publisher's Version of Record
https://doi.org/10.1103/physrevb.98.195403
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