Noise processes in InAs/Ga(In)Sb Corbino structures
Abstract
Two-dimensional topological insulators are of great interest, with predicted topological protection of one-dimensional helical edge states at their boundaries. Shot noise, the fluctuations in driven current due to the discreteness of charge carriers, has been proposed as a way of distinguishing between trivial and nontrivial edge state conduction, as well as a means of assessing back-scattering mechanisms in the latter. Such measurements require an understanding of possible contributions to the noise from contacts and conduction in the 2D bulk. We present noise measurements in Corbino structures based on InAs/Ga(In)Sb quantum well interfaces over a broad temperature and applied current range. As the temperature is lowered and the bulk transport is gapped out, shot noise becomes detectable in these two-terminal devices, in both high- and low-frequency measurement techniques. Quantitative comparison with a noise model shows that the total applied voltage drop is split among the contacts and the bulk and that the devices have some intrinsic asymmetry. Within that model, the magnitude of the shot noise appears to be anomalously large, implying the contacts to the 2D bulk are nontrivial in this system.
- Authors:
-
[3];
[1]
- Rice Univ., Houston, TX (United States)
- Cornell Univ., Ithaca, NY (United States)
- Rice Univ., Houston, TX (United States); Peking Univ., Beijing (China)
- Publication Date:
- Research Org.:
- Rice Univ., Houston, TX (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1609761
- Alternate Identifier(s):
- OSTI ID: 1546102
- Grant/Contract Number:
- FG02-06ER46337
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 115; Journal Issue: 5; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Physics; Electronic noise; Semiconductor devices; Quantum wells; Contact impedance; Topological insulator
Citation Formats
Stevens, Loah A., Li, Tingxin, Du, Rui-Rui, and Natelson, Douglas. Noise processes in InAs/Ga(In)Sb Corbino structures. United States: N. p., 2019.
Web. doi:10.1063/1.5111626.
Stevens, Loah A., Li, Tingxin, Du, Rui-Rui, & Natelson, Douglas. Noise processes in InAs/Ga(In)Sb Corbino structures. United States. https://doi.org/10.1063/1.5111626
Stevens, Loah A., Li, Tingxin, Du, Rui-Rui, and Natelson, Douglas. Mon .
"Noise processes in InAs/Ga(In)Sb Corbino structures". United States. https://doi.org/10.1063/1.5111626. https://www.osti.gov/servlets/purl/1609761.
@article{osti_1609761,
title = {Noise processes in InAs/Ga(In)Sb Corbino structures},
author = {Stevens, Loah A. and Li, Tingxin and Du, Rui-Rui and Natelson, Douglas},
abstractNote = {Two-dimensional topological insulators are of great interest, with predicted topological protection of one-dimensional helical edge states at their boundaries. Shot noise, the fluctuations in driven current due to the discreteness of charge carriers, has been proposed as a way of distinguishing between trivial and nontrivial edge state conduction, as well as a means of assessing back-scattering mechanisms in the latter. Such measurements require an understanding of possible contributions to the noise from contacts and conduction in the 2D bulk. We present noise measurements in Corbino structures based on InAs/Ga(In)Sb quantum well interfaces over a broad temperature and applied current range. As the temperature is lowered and the bulk transport is gapped out, shot noise becomes detectable in these two-terminal devices, in both high- and low-frequency measurement techniques. Quantitative comparison with a noise model shows that the total applied voltage drop is split among the contacts and the bulk and that the devices have some intrinsic asymmetry. Within that model, the magnitude of the shot noise appears to be anomalously large, implying the contacts to the 2D bulk are nontrivial in this system.},
doi = {10.1063/1.5111626},
journal = {Applied Physics Letters},
number = 5,
volume = 115,
place = {United States},
year = {Mon Jul 29 00:00:00 EDT 2019},
month = {Mon Jul 29 00:00:00 EDT 2019}
}
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Figures / Tables:
FIG. 1: (a) Colorized SEM image; yellow indicates inner and outer gold electrodes, and blue denotes the top gate; (b) diagram of the device structure; and (c) band structure of the QWs.
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