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Title: Signatures of atomic-scale structure in the energy dispersion and coherence of a Si quantum-dot qubit

Abstract

In this paper, we report anomalous behavior in the energy dispersion of a three-electron double-quantum-dot hybrid qubit and argue that it is caused by atomic-scale disorder at the quantum-well interface. By employing tight-binding simulations, we identify potential disorder profiles that induce behavior consistent with the experiments. The results indicate that disorder can give rise to “sweet spots” where the decoherence caused by charge noise is suppressed, even in a parameter regime where true sweet spots are unexpected. Conversely, “hot spots” where the decoherence is enhanced can also occur. Our results suggest that interfacial atomic structure can be used in particular cases as a tool to enhance the fidelity of Si double-dot qubits.

Authors:
 [1];  [2];  [3];  [2];  [2];  [2];  [2];  [2];  [2];  [2];  [4];  [2];  [2];  [2]
  1. Consejo Superior de Investigaciones Científicas (CSIC), Madrid (Spain). Inst. de Ciencia de Materiales de Madrid (ICMM); Univ. of Wisconsin, Madison, WI (United States)
  2. Univ. of Wisconsin, Madison, WI (United States)
  3. Seoul National Univ. (South Korea)
  4. Consejo Superior de Investigaciones Científicas (CSIC), Madrid (Spain). Inst. de Ciencia de Materiales de Madrid (ICMM)
Publication Date:
Research Org.:
Univ. of Wisconsin, Madison, WI (United States)
Sponsoring Org.:
USDOE Office of Science (SC); US Army Research Office (ARO); National Science Foundation (NSF); US Department of the Navy, Office of Naval Research (ONR); Ministry of Economic Affairs and Digital Transformation of Spain (MINECO); Federación Española de Enfermedades Raras (FEDER); Consejo Superior de Investigaciones Científicas (CSIC); Korea Institute of Science and Technology
OSTI Identifier:
1609467
Alternate Identifier(s):
OSTI ID: 1479611
Grant/Contract Number:  
FG02-03ER46028; N00014-15-1- 0029; FIS2012-33521; FIS2015-64654-P; BES-2013-065888; EEBB-I-17-12054; 201660I031
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review. B
Additional Journal Information:
Journal Volume: 98; Journal Issue: 16; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
97 MATHEMATICS AND COMPUTING; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; Materials Science; Physics

Citation Formats

Abadillo-Uriel, J. C., Thorgrimsson, Brandur, Kim, Dohun, Smith, L. W., Simmons, C. B., Ward, Daniel R., Foote, Ryan H., Corrigan, J., Savage, D. E., Lagally, M. G., Calderón, M. J., Coppersmith, S. N., Eriksson, M. A., and Friesen, Mark. Signatures of atomic-scale structure in the energy dispersion and coherence of a Si quantum-dot qubit. United States: N. p., 2018. Web. doi:10.1103/physrevb.98.165438.
Abadillo-Uriel, J. C., Thorgrimsson, Brandur, Kim, Dohun, Smith, L. W., Simmons, C. B., Ward, Daniel R., Foote, Ryan H., Corrigan, J., Savage, D. E., Lagally, M. G., Calderón, M. J., Coppersmith, S. N., Eriksson, M. A., & Friesen, Mark. Signatures of atomic-scale structure in the energy dispersion and coherence of a Si quantum-dot qubit. United States. https://doi.org/10.1103/physrevb.98.165438
Abadillo-Uriel, J. C., Thorgrimsson, Brandur, Kim, Dohun, Smith, L. W., Simmons, C. B., Ward, Daniel R., Foote, Ryan H., Corrigan, J., Savage, D. E., Lagally, M. G., Calderón, M. J., Coppersmith, S. N., Eriksson, M. A., and Friesen, Mark. Mon . "Signatures of atomic-scale structure in the energy dispersion and coherence of a Si quantum-dot qubit". United States. https://doi.org/10.1103/physrevb.98.165438. https://www.osti.gov/servlets/purl/1609467.
@article{osti_1609467,
title = {Signatures of atomic-scale structure in the energy dispersion and coherence of a Si quantum-dot qubit},
author = {Abadillo-Uriel, J. C. and Thorgrimsson, Brandur and Kim, Dohun and Smith, L. W. and Simmons, C. B. and Ward, Daniel R. and Foote, Ryan H. and Corrigan, J. and Savage, D. E. and Lagally, M. G. and Calderón, M. J. and Coppersmith, S. N. and Eriksson, M. A. and Friesen, Mark},
abstractNote = {In this paper, we report anomalous behavior in the energy dispersion of a three-electron double-quantum-dot hybrid qubit and argue that it is caused by atomic-scale disorder at the quantum-well interface. By employing tight-binding simulations, we identify potential disorder profiles that induce behavior consistent with the experiments. The results indicate that disorder can give rise to “sweet spots” where the decoherence caused by charge noise is suppressed, even in a parameter regime where true sweet spots are unexpected. Conversely, “hot spots” where the decoherence is enhanced can also occur. Our results suggest that interfacial atomic structure can be used in particular cases as a tool to enhance the fidelity of Si double-dot qubits.},
doi = {10.1103/physrevb.98.165438},
journal = {Physical Review. B},
number = 16,
volume = 98,
place = {United States},
year = {Mon Oct 29 00:00:00 EDT 2018},
month = {Mon Oct 29 00:00:00 EDT 2018}
}

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Works referencing / citing this record:

Phonon-induced relaxation and decoherence times of the hybrid qubit in silicon quantum dots
journal, July 2019


Spin-Blockade Spectroscopy of Si / Si - Ge Quantum Dots
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The Effects of Electric Field on the Coherence Time of RbCl Quantum Pseudodot Qubit
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Effects of interface steps on the valley-orbit coupling in a Si/SiGe quantum dot
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Phonon-induced relaxation and decoherence times of the hybrid qubit in silicon quantum dots
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Spin-Blockade Spectroscopy of Si/SiGe Quantum Dots
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Is all-electrical silicon quantum computing feasible in the long term?
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