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Title: Surface states of strained thin films of the Dirac semimetal Cd3As2

Abstract

Herein we report on the growth and transport properties of strained thin films of the three-dimensional Dirac semimetal Cd 3 As 2 . Epitaxial heterostructures, consisting of (112)-oriented Cd 3 As 2 films, are grown on nearly lattice matched ( Ga 1 - x In x ) Sb buffer layers on (111) GaAs substrates by molecular beam epitaxy. The epitaxial coherency strain breaks the fourfold rotational symmetry, which protects the bulk Dirac nodes in Cd 3 As 2 . All strained films exhibit the quantum Hall effect with most carriers residing in the two-dimensional states, irrespective of the sign of the biaxial stress. The Hall mobility monotonically increases as the biaxial stress is changed from compressive towards tensile. Furthermore, pronounced anisotropy is seen in the transport properties. The results show that the quantum Hall effect, which is quite similar to that of unstrained (112)-oriented films, is independent of the presence of bulk Dirac nodes. Its appearance is consistent with the topological surface states that are a characteristic of the topological Z 2 invariant.

Authors:
 [1];  [1];  [1];  [1];  [2];  [1]
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  1. Univ. of California, Santa Barbara, CA (United States)
  2. Univ. of Waterloo, ON (Canada)
Publication Date:
Research Org.:
Univ. of California, Santa Barbara, CA (United States); Argonne National Laboratory (ANL), Argonne, IL (United States); Energy Frontier Research Centers (EFRC) (United States). Center for the Advancement of Topological Semimetals (CATS)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOD; National Science Foundation (NSF)
OSTI Identifier:
1609398
Alternate Identifier(s):
OSTI ID: 1546361
Grant/Contract Number:  
FG02-02ER45994; AC02-06CH11357; N00014-16-1-2814; DMR 1720256
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Volume: 3; Journal Issue: 6; Journal ID: ISSN 2475-9953
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; Materials Science

Citation Formats

Goyal, Manik, Kim, Honggyu, Schumann, Timo, Galletti, Luca, Burkov, Anton A., and Stemmer, Susanne. Surface states of strained thin films of the Dirac semimetal Cd3As2. United States: N. p., 2019. Web. doi:10.1103/physrevmaterials.3.064204.
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Goyal, Manik, Kim, Honggyu, Schumann, Timo, Galletti, Luca, Burkov, Anton A., & Stemmer, Susanne. Surface states of strained thin films of the Dirac semimetal Cd3As2. United States. https://doi.org/10.1103/physrevmaterials.3.064204
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Goyal, Manik, Kim, Honggyu, Schumann, Timo, Galletti, Luca, Burkov, Anton A., and Stemmer, Susanne. Tue . "Surface states of strained thin films of the Dirac semimetal Cd3As2". United States. https://doi.org/10.1103/physrevmaterials.3.064204. https://www.osti.gov/servlets/purl/1609398.
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@article{osti_1609398,
title = {Surface states of strained thin films of the Dirac semimetal Cd3As2},
author = {Goyal, Manik and Kim, Honggyu and Schumann, Timo and Galletti, Luca and Burkov, Anton A. and Stemmer, Susanne},
abstractNote = {Herein we report on the growth and transport properties of strained thin films of the three-dimensional Dirac semimetal Cd3As2. Epitaxial heterostructures, consisting of (112)-oriented Cd3As2 films, are grown on nearly lattice matched (Ga1-xInx)Sb buffer layers on (111) GaAs substrates by molecular beam epitaxy. The epitaxial coherency strain breaks the fourfold rotational symmetry, which protects the bulk Dirac nodes in Cd3As2. All strained films exhibit the quantum Hall effect with most carriers residing in the two-dimensional states, irrespective of the sign of the biaxial stress. The Hall mobility monotonically increases as the biaxial stress is changed from compressive towards tensile. Furthermore, pronounced anisotropy is seen in the transport properties. The results show that the quantum Hall effect, which is quite similar to that of unstrained (112)-oriented films, is independent of the presence of bulk Dirac nodes. Its appearance is consistent with the topological surface states that are a characteristic of the topological Z2 invariant.},
doi = {10.1103/physrevmaterials.3.064204},
journal = {Physical Review Materials},
number = 6,
volume = 3,
place = {United States},
year = {Tue Jun 18 00:00:00 EDT 2019},
month = {Tue Jun 18 00:00:00 EDT 2019}
}
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Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1103/physrevmaterials.3.064204
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Cited by: 17 works
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Figures / Tables:

Figure 1 Figure 1: (a) θ-2θ XRD scans around the out-of-plane 224 reflection of a 80 nm Cd3As2 film and that of the 111 (Ga1-$\mathcal{x}$In$\mathcal{x}$)Sb buffer layer reflections, respectively, for different buffer layer compositions $\mathcal{x}$. The In compositions of the buffer layers (top to bottom) are $\mathcal{x}$ = 0.75, 0.69, 0.64, andmore » 0.60, respectively. The dashed line indicates the average position of the 224 peak of relaxed Cd3As2 films on GaSb buffers. Film reflections to the left of the buffer layer reflection are consistent with compressive in-plane strains. (b) Hall mobilities of Cd3As2 films grown on (Ga1-$\mathcal{x}$In$\mathcal{x}$)Sb buffer layers with different compositions, measured along the [$\bar{1}10$] direction of the buffer layer at 2 K. The horizontal axis shows the buffer layer lattice parameter and the dashed line indicates the average lattice parameter of relaxed Cd3As2 films on GaSb.« less
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