Title: Suppression of the antiferromagnetic metallic state in the pressurized $\mathrm{MnB}{\mathrm{i}}_2\mathrm{T}{\mathrm{e}}_4$ single crystal

Abstract

We study the effect of hydrostatic pressure on the electrical transport, magnetic, and structural properties of $\mathrm{MnB}{\mathrm{i}}_2\mathrm{T}{\mathrm{e}}_4$ by measuring its resistivity, Hall effect, and x-ray diffraction under pressures up to 12.8 GPa supplemented by the first-principles calculations. At ambient pressure, $\mathrm{MnB}{\mathrm{i}}_2\mathrm{T}{\mathrm{e}}_4$ shows a metallic conducting behavior with a cusplike anomaly at around T_N ≈ 24 K, where it undergoes a long-range antiferromagnetic (AF) transition. With increasing pressure, T_N determined from the resistivity anomaly first increases slightly with a maximum at around 2 GPa and then decreases until vanishing completely at about 7 GPa. Intriguingly, its resistivity is enhanced gradually by pressure and even evolves from metallic to semimetal or semiconductinglike behavior as T_N is suppressed. However, the density of the n-type charge carrier that remains dominant under pressure increases with pressure. In addition, the interlayer AF coupling seems to be strengthened under compression, since the critical field H c 1 for the spin-flop transition to the canted AF state is found to increase with pressure. No structural transition was evidenced up to 12.8 GPa, but some lattice softening was observed at about 2 GPa, signaling the occurrence of an electronic transition or crossover from a localized to itinerant state. Finally, we have rationalized these experimental findings by considering the pressure-induced enhancement of antiferromagnetic/ferromagnetic competition and partial delocalization of Mn-3 d electrons, which not only destroys long-range AF order but also promotes charge-carrier localization through enhanced spin fluctuations and/or the formation of a hybridization gap at high pressure.

Authors:

Chen, K. Y. ^[1]; Yan, Jiaqiang  ^[2];

• Search DOE PAGES for author "Yan, Jiaqiang"
• Search DOE PAGES for ORCID "0000-0001-6625-4706"

Parker, David S.  ^[3];

• Search DOE PAGES for author "Parker, David S."
• Search DOE PAGES for ORCID "0000-0001-6101-1334"

Zhou, Jianshi ^[3]; Uwatoko, Y. ^[4]; Cheng, Jinguang  ^[5]

• Search DOE PAGES for author "Cheng, Jinguang"
• Search DOE PAGES for ORCID "0000-0002-4969-1960"

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+ Show Author Affiliations

1. Chinese Academy of Sciences (CAS), Beijing (China). Beijing National Lab. for Condensed Matter Physics and Inst. of Physics; Univ. of Chinese Academy of Sciences, Beijing (China). School of Physical Sciences
2. Chinese Academy of Sciences (CAS), Beijing (China). Beijing National Lab. for Condensed Matter Physics and Inst. of Physics; Univ. of Chinese Academy of Sciences, Beijing (China). School of Physical Sciences; Songshan Lake Materials Lab., Dongguan, Guangdong (China)
3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
4. Univ. of Texas, Austin, TX (United States). Inst. for Solid State Physics
5. Chinese Academy of Sciences (CAS), Beijing (China). Beijing National Lab. for Condensed Matter Physics and Inst. of Physics; Univ. of Tokyo (Japan). Inst. for Solid State Physics; Univ. of Chinese Academy of Sciences, Beijing (China). School of Physical Sciences; Songshan Lake Materials Lab., Dongguan, G

Publication Date:

Tue Sep 03 00:00:00 EDT 2019

Research Org.:

Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Org.:

USDOE Office of Science (SC), Basic Energy Sciences (BES); National Natural Science Foundation of China (NSFC); National Key Research and Development Program of China; National Science Foundation (NSF)

OSTI Identifier:

1606901

Alternate Identifier(s):

OSTI ID: 1560315

Grant/Contract Number:  

AC05-00OR22725; DMR-1729588; 2018YFA0305700; 2018YFA0305800; 11574377; 11888101; 11834016; 11874400; XDB25000000; QYZDB-SSW-SLH013

Resource Type:

Accepted Manuscript

Journal Name:

Physical Review Materials

Additional Journal Information:

Journal Volume: 3; Journal Issue: 9; Journal ID: ISSN 2475-9953

Publisher:

American Physical Society (APS)

Country of Publication:

United States

Language:

English

Subject:

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY