Development of a grain growth model for U3Si2 using experimental data, phase field simulation and molecular dynamics
Abstract
The purpose of this work is to develop a model for normal grain growth in U3Si2. The average grain boundary energy was determined from previously published molecular dynamics simulations. The grain growth kinetics were quantified at various temperatures by annealing nanocrystalline samples. Here, the mobility was determined by comparing phase field grain growth simulations to the experimental data.
- Authors:
-
- Univ. of Florida, Gainesville, FL (United States)
- Rensselaer Polytechnic Inst., Troy, NY (United States)
- Idaho National Lab. (INL), Idaho Falls, ID (United States)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- North Carolina State Univ., Raleigh, NC (United States)
- Univ. of Wisconsin, Madison, WI (United States)
- Publication Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE Office of Nuclear Energy (NE)
- OSTI Identifier:
- 1606028
- Alternate Identifier(s):
- OSTI ID: 1602301
- Grant/Contract Number:
- AC05-00OR22725; AC07-051D14517; 16-10667; 19-1691
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Nuclear Materials
- Additional Journal Information:
- Journal Volume: 532; Journal Issue: C; Journal ID: ISSN 0022-3115
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; U3Si2; grain growth; isothermal annealing experiments; phase field; grain boundary mobility
Citation Formats
Cheniour, Amani, Tonks, Michael R., Gong, Bowen, Yao, Tiankai, He, Lingfeng, Harp, Jason M., Beeler, Benjamin, Zhang, Yongfeng, and Lian, Jie. Development of a grain growth model for U3Si2 using experimental data, phase field simulation and molecular dynamics. United States: N. p., 2020.
Web. doi:10.1016/j.jnucmat.2020.152069.
Cheniour, Amani, Tonks, Michael R., Gong, Bowen, Yao, Tiankai, He, Lingfeng, Harp, Jason M., Beeler, Benjamin, Zhang, Yongfeng, & Lian, Jie. Development of a grain growth model for U3Si2 using experimental data, phase field simulation and molecular dynamics. United States. https://doi.org/10.1016/j.jnucmat.2020.152069
Cheniour, Amani, Tonks, Michael R., Gong, Bowen, Yao, Tiankai, He, Lingfeng, Harp, Jason M., Beeler, Benjamin, Zhang, Yongfeng, and Lian, Jie. Sat .
"Development of a grain growth model for U3Si2 using experimental data, phase field simulation and molecular dynamics". United States. https://doi.org/10.1016/j.jnucmat.2020.152069. https://www.osti.gov/servlets/purl/1606028.
@article{osti_1606028,
title = {Development of a grain growth model for U3Si2 using experimental data, phase field simulation and molecular dynamics},
author = {Cheniour, Amani and Tonks, Michael R. and Gong, Bowen and Yao, Tiankai and He, Lingfeng and Harp, Jason M. and Beeler, Benjamin and Zhang, Yongfeng and Lian, Jie},
abstractNote = {The purpose of this work is to develop a model for normal grain growth in U3Si2. The average grain boundary energy was determined from previously published molecular dynamics simulations. The grain growth kinetics were quantified at various temperatures by annealing nanocrystalline samples. Here, the mobility was determined by comparing phase field grain growth simulations to the experimental data.},
doi = {10.1016/j.jnucmat.2020.152069},
journal = {Journal of Nuclear Materials},
number = C,
volume = 532,
place = {United States},
year = {Sat Feb 22 00:00:00 EST 2020},
month = {Sat Feb 22 00:00:00 EST 2020}
}
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