Strained bilayer with reduced exciton-phonon coupling
Abstract
Herein we investigate excitonic absorption and emission in bilayer WSe2 under tensile strain. We observe a redshift of 110 meV in the energy of the $$A$$ exciton absorption peak (at the direct gap at the $$K$$ point in the Brillouin zone) under 2.1% uniaxial tensile strain. In addition, under the same strain, the spectral linewidth of the $$A$$ exciton at room temperature decreases by a factor of 2, from 70 to 36 meV. We show that this decrease is a result of suppression of phonon-mediated exciton scattering channels. This suppression is associated with the relative upshift under strain of the $$Q$$ valley in the conduction band (involved in the indirect exciton emission), which is nearly degenerate with the $$K$$ valley (involved in the A exciton). We analyze the strain-dependent absorption and photoluminescence spectra to determine the relative positions of these valleys and to infer intervalley scattering rates. Our model describes well the decrease and the distinct trends in the $$A$$ exciton linewidth of monolayer and bilayer WSe2 under strain. The results show that strain can be used to tune, as well as to probe, the relative energies of band extrema and exciton scattering channels in two-dimensional semiconductors.
- Authors:
-
- Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials
- Stanford Univ., CA (United States). Dept. of Applied Physics; SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Publication Date:
- Research Org.:
- Stanford Univ., CA (United States); SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); US Air Force Office of Scientific Research (AFOSR)
- OSTI Identifier:
- 1605986
- Alternate Identifier(s):
- OSTI ID: 1605972; OSTI ID: 1616991
- Grant/Contract Number:
- SC0019140; DMR-1420634; FA9550-17-1-0002; AC02-76SF00515
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review B
- Additional Journal Information:
- Journal Volume: 101; Journal Issue: 11; Journal ID: ISSN 2469-9950
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Excitons; electronic structure; electron-phonon coupling; strain; two-dimensional materials; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Aslan, Ozgur Burak, Deng, Minda, Brongersma, Mark L., and Heinz, Tony F. Strained bilayer WSe2 with reduced exciton-phonon coupling. United States: N. p., 2020.
Web. doi:10.1103/PhysRevB.101.115305.
Aslan, Ozgur Burak, Deng, Minda, Brongersma, Mark L., & Heinz, Tony F. Strained bilayer WSe2 with reduced exciton-phonon coupling. United States. https://doi.org/10.1103/PhysRevB.101.115305
Aslan, Ozgur Burak, Deng, Minda, Brongersma, Mark L., and Heinz, Tony F. Mon .
"Strained bilayer WSe2 with reduced exciton-phonon coupling". United States. https://doi.org/10.1103/PhysRevB.101.115305. https://www.osti.gov/servlets/purl/1605986.
@article{osti_1605986,
title = {Strained bilayer WSe2 with reduced exciton-phonon coupling},
author = {Aslan, Ozgur Burak and Deng, Minda and Brongersma, Mark L. and Heinz, Tony F.},
abstractNote = {Herein we investigate excitonic absorption and emission in bilayer WSe2 under tensile strain. We observe a redshift of 110 meV in the energy of the $A$ exciton absorption peak (at the direct gap at the $K$ point in the Brillouin zone) under 2.1% uniaxial tensile strain. In addition, under the same strain, the spectral linewidth of the $A$ exciton at room temperature decreases by a factor of 2, from 70 to 36 meV. We show that this decrease is a result of suppression of phonon-mediated exciton scattering channels. This suppression is associated with the relative upshift under strain of the $Q$ valley in the conduction band (involved in the indirect exciton emission), which is nearly degenerate with the $K$ valley (involved in the A exciton). We analyze the strain-dependent absorption and photoluminescence spectra to determine the relative positions of these valleys and to infer intervalley scattering rates. Our model describes well the decrease and the distinct trends in the $A$ exciton linewidth of monolayer and bilayer WSe2 under strain. The results show that strain can be used to tune, as well as to probe, the relative energies of band extrema and exciton scattering channels in two-dimensional semiconductors.},
doi = {10.1103/PhysRevB.101.115305},
journal = {Physical Review B},
number = 11,
volume = 101,
place = {United States},
year = {Mon Mar 23 00:00:00 EDT 2020},
month = {Mon Mar 23 00:00:00 EDT 2020}
}
Web of Science
Works referenced in this record:
Strain engineering of WS 2 , WSe 2 , and WTe 2
journal, January 2014
- Amin, B.; Kaloni, T. P.; Schwingenschlögl, U.
- RSC Advances, Vol. 4, Issue 65
Strain tuning of optical emission energy and polarization in monolayer and bilayer MoS
journal, September 2013
- Zhu, C. R.; Wang, G.; Liu, B. L.
- Physical Review B, Vol. 88, Issue 12
Visualizing electrostatic gating effects in two-dimensional heterostructures
journal, July 2019
- Nguyen, Paul V.; Teutsch, Natalie C.; Wilson, Nathan P.
- Nature, Vol. 572, Issue 7768
Radiatively Limited Dephasing and Exciton Dynamics in MoSe 2 Monolayers Revealed with Four-Wave Mixing Microscopy
journal, August 2016
- Jakubczyk, Tomasz; Delmonte, Valentin; Koperski, Maciej
- Nano Letters, Vol. 16, Issue 9
High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity
journal, April 2015
- Kang, Kibum; Xie, Saien; Huang, Lujie
- Nature, Vol. 520, Issue 7549
Strain-Induced Indirect to Direct Bandgap Transition in Multilayer WSe 2
journal, July 2014
- Desai, Sujay B.; Seol, Gyungseon; Kang, Jeong Seuk
- Nano Letters, Vol. 14, Issue 8
Spin–orbit coupling in the band structure of monolayer WSe 2
journal, April 2015
- Le, Duy; Barinov, Alexei; Preciado, Edwin
- Journal of Physics: Condensed Matter, Vol. 27, Issue 18
Strain Engineering and Raman Spectroscopy of Monolayer Transition Metal Dichalcogenides
journal, July 2018
- Dadgar, A. M.; Scullion, D.; Kang, K.
- Chemistry of Materials, Vol. 30, Issue 15
Excitonic Linewidth Approaching the Homogeneous Limit in -Based van der Waals Heterostructures
journal, May 2017
- Cadiz, F.; Courtade, E.; Robert, C.
- Physical Review X, Vol. 7, Issue 2
Strain Control of Exciton–Phonon Coupling in Atomically Thin Semiconductors
journal, February 2018
- Niehues, Iris; Schmidt, Robert; Drüppel, Matthias
- Nano Letters, Vol. 18, Issue 3
Anomalous Raman spectra and thickness-dependent electronic properties of WSe
journal, April 2013
- Sahin, H.; Tongay, S.; Horzum, S.
- Physical Review B, Vol. 87, Issue 16
Strain-modulated excitonic gaps in mono- and bi-layer MoSe 2
journal, July 2016
- Ji, Jianting; Zhang, Anmin; Xia, Tianlong
- Chinese Physics B, Vol. 25, Issue 7
Intrinsic electrical transport properties of monolayer silicene and MoS from first principles
journal, March 2013
- Li, Xiaodong; Mullen, Jeffrey T.; Jin, Zhenghe
- Physical Review B, Vol. 87, Issue 11
Dielectric Genome of van der Waals Heterostructures
journal, June 2015
- Andersen, Kirsten; Latini, Simone; Thygesen, Kristian S.
- Nano Letters, Vol. 15, Issue 7
Pressure-induced K–Λ crossing in monolayer WSe 2
journal, January 2016
- Ye, Yanxia; Dou, Xiuming; Ding, Kun
- Nanoscale, Vol. 8, Issue 20
Elucidating the Optical Properties of Novel Heterolayered Materials Based on MoTe 2 –InN for Photovoltaic Applications
journal, May 2015
- Villegas, Cesar E. P.; Rocha, A. R.
- The Journal of Physical Chemistry C, Vol. 119, Issue 21
k · p theory for two-dimensional transition metal dichalcogenide semiconductors
journal, April 2015
- Kormányos, Andor; Burkard, Guido; Gmitra, Martin
- 2D Materials, Vol. 2, Issue 2
Phonon Sidebands in Monolayer Transition Metal Dichalcogenides
journal, November 2017
- Christiansen, Dominik; Selig, Malte; Berghäuser, Gunnar
- Physical Review Letters, Vol. 119, Issue 18
Exciton dynamics in WSe 2 bilayers
journal, November 2014
- Wang, G.; Marie, X.; Bouet, L.
- Applied Physics Letters, Vol. 105, Issue 18
Intrinsic homogeneous linewidth and broadening mechanisms of excitons in monolayer transition metal dichalcogenides
journal, September 2015
- Moody, Galan; Kavir Dass, Chandriker; Hao, Kai
- Nature Communications, Vol. 6, Issue 1
Shubnikov–de Haas Oscillations of High-Mobility Holes in Monolayer and Bilayer : Landau Level Degeneracy, Effective Mass, and Negative Compressibility
journal, February 2016
- Fallahazad, Babak; Movva, Hema C. P.; Kim, Kyounghwan
- Physical Review Letters, Vol. 116, Issue 8
Exciton broadening and band renormalization due to Dexter-like intervalley coupling
journal, February 2018
- Bernal-Villamil, Ivan; Berghäuser, Gunnar; Selig, Malte
- 2D Materials, Vol. 5, Issue 2
Semiconductor to metal transition in bilayer transition metals dichalcogenides MX 2 ( M = Mo, W; X = S, Se, Te)
journal, August 2013
- Kumar, Ashok; Ahluwalia, P. K.
- Modelling and Simulation in Materials Science and Engineering, Vol. 21, Issue 6
Finite-momentum exciton landscape in mono- and bilayer transition metal dichalcogenides
journal, April 2019
- Deilmann, Thorsten; Thygesen, Kristian Sommer
- 2D Materials, Vol. 6, Issue 3
Enhancement of Exciton–Phonon Scattering from Monolayer to Bilayer WS 2
journal, August 2018
- Raja, Archana; Selig, Malte; Berghäuser, Gunnar
- Nano Letters, Vol. 18, Issue 10
Coulomb engineering of the bandgap and excitons in two-dimensional materials
journal, May 2017
- Raja, Archana; Chaves, Andrey; Yu, Jaeeun
- Nature Communications, Vol. 8, Issue 1
Bandgap Engineering of Strained Monolayer and Bilayer MoS2
journal, July 2013
- Conley, Hiram J.; Wang, Bin; Ziegler, Jed I.
- Nano Letters, Vol. 13, Issue 8, p. 3626-3630
Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H- semiconductors ( Mo, W; S, Se, Te)
journal, January 2012
- Yun, Won Seok; Han, S. W.; Hong, Soon Cheol
- Physical Review B, Vol. 85, Issue 3
Excitonic linewidth and coherence lifetime in monolayer transition metal dichalcogenides
journal, November 2016
- Selig, Malte; Berghäuser, Gunnar; Raja, Archana
- Nature Communications, Vol. 7, Issue 1
Strain tuning of excitons in monolayer
journal, September 2018
- Aslan, Ozgur Burak; Deng, Minda; Heinz, Tony F.
- Physical Review B, Vol. 98, Issue 11
Precise and reversible band gap tuning in single-layer MoSe 2 by uniaxial strain
journal, January 2016
- Island, Joshua O.; Kuc, Agnieszka; Diependaal, Erik H.
- Nanoscale, Vol. 8, Issue 5
Stretching and Breaking of Ultrathin MoS 2
journal, November 2011
- Bertolazzi, Simone; Brivio, Jacopo; Kis, Andras
- ACS Nano, Vol. 5, Issue 12
Exciton radiative lifetime in transition metal dichalcogenide monolayers
journal, May 2016
- Robert, C.; Lagarde, D.; Cadiz, F.
- Physical Review B, Vol. 93, Issue 20
Intrinsic transport properties of electrons and holes in monolayer transition-metal dichalcogenides
journal, July 2014
- Jin, Zhenghe; Li, Xiaodong; Mullen, Jeffrey T.
- Physical Review B, Vol. 90, Issue 4
Approaching the intrinsic photoluminescence linewidth in transition metal dichalcogenide monolayers
journal, July 2017
- Ajayi, Obafunso A.; Ardelean, Jenny V.; Shepard, Gabriella D.
- 2D Materials, Vol. 4, Issue 3
Tightly Bound Excitons in Monolayer
journal, July 2014
- He, Keliang; Kumar, Nardeep; Zhao, Liang
- Physical Review Letters, Vol. 113, Issue 2
Photoluminescence emission and Raman response of monolayer MoS_2, MoSe_2, and WSe_2
journal, January 2013
- Tonndorf, Philipp; Schmidt, Robert; Böttger, Philipp
- Optics Express, Vol. 21, Issue 4
Origin of Indirect Optical Transitions in Few-Layer MoS 2 , WS 2 , and WSe 2
journal, October 2013
- Zhao, Weijie; Ribeiro, R. M.; Toh, Minglin
- Nano Letters, Vol. 13, Issue 11
Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS 2
journal, August 2016
- Lloyd, David; Liu, Xinghui; Christopher, Jason W.
- Nano Letters, Vol. 16, Issue 9
Very large strain gauges based on single layer MoSe 2 and WSe 2 for sensing applications
journal, December 2015
- Hosseini, Manouchehr; Elahi, Mohammad; Pourfath, Mahdi
- Applied Physics Letters, Vol. 107, Issue 25
Experimental Demonstration of Continuous Electronic Structure Tuning via Strain in Atomically Thin MoS 2
journal, May 2013
- He, Keliang; Poole, Charles; Mak, Kin Fai
- Nano Letters, Vol. 13, Issue 6
Electronic properties of single-layer and multilayer transition metal dichalcogenides MX 2 ( M = Mo, W and X = S, Se): Electronic properties of TMDs
journal, September 2014
- Roldán, Rafael; Silva-Guillén, Jose A.; López-Sancho, M. Pilar
- Annalen der Physik, Vol. 526, Issue 9-10
Band structure engineering of monolayer MoS 2 on h-BN: first-principles calculations
journal, January 2014
- Huang, Zongyu; He, Chaoyu; Qi, Xiang
- Journal of Physics D: Applied Physics, Vol. 47, Issue 7
Protecting the properties of monolayer MoS2 on silicon based substrates with an atomically thin buffer
journal, February 2016
- Man, Michael K. L.; Deckoff-Jones, Skylar; Winchester, Andrew
- Scientific Reports, Vol. 6, Issue 1
Impact of strain on the excitonic linewidth in transition metal dichalcogenides
journal, November 2018
- Khatibi, Zahra; Feierabend, Maja; Selig, Malte
- 2D Materials, Vol. 6, Issue 1
Phonon-limited mobility in -type single-layer MoS from first principles
journal, March 2012
- Kaasbjerg, Kristen; Thygesen, Kristian S.; Jacobsen, Karsten W.
- Physical Review B, Vol. 85, Issue 11
Strain-Induced Modulation of Electron Mobility in Single-Layer Transition Metal Dichalcogenides MX 2 ( $M = {\rm Mo}$ , W; $X = {\rm S}$ , Se)
journal, October 2015
- Hosseini, Manouchehr; Elahi, Mohammad; Pourfath, Mahdi
- IEEE Transactions on Electron Devices, Vol. 62, Issue 10
Dielectric disorder in two-dimensional materials
journal, August 2019
- Raja, Archana; Waldecker, Lutz; Zipfel, Jonas
- Nature Nanotechnology, Vol. 14, Issue 9
Resonant internal quantum transitions and femtosecond radiative decay of excitons in monolayer WSe2
journal, July 2015
- Poellmann, C.; Steinleitner, P.; Leierseder, U.
- Nature Materials, Vol. 14, Issue 9
Structural and electronic properties of MoS 2 , WS 2 , and WS 2 /MoS 2 heterostructures encapsulated with hexagonal boron nitride monolayers
journal, August 2017
- Yelgel, C.; Yelgel, Ö. C.; Gülseren, O.
- Journal of Applied Physics, Vol. 122, Issue 6
Strain-induced giant second-harmonic generation in monolayered 2H-MoX2 (X = S, Se, Te)
journal, December 2015
- Rhim, S. H.; Kim, Yong Soo; Freeman, A. J.
- Applied Physics Letters, Vol. 107, Issue 24
Orbital analysis of electronic structure and phonon dispersion in MoS , MoSe , WS , and WSe monolayers under strain
journal, November 2013
- Chang, Chung-Huai; Fan, Xiaofeng; Lin, Shi-Hsin
- Physical Review B, Vol. 88, Issue 19
Probing the Optical Properties and Strain-Tuning of Ultrathin Mo 1– x W x Te 2
journal, March 2018
- Aslan, Ozgur Burak; Datye, Isha M.; Mleczko, Michal J.
- Nano Letters, Vol. 18, Issue 4
Reversible uniaxial strain tuning in atomically thin WSe 2
journal, June 2016
- Schmidt, Robert; Niehues, Iris; Schneider, Robert
- 2D Materials, Vol. 3, Issue 2
Evolution of Electronic Structure in Atomically Thin Sheets of WS 2 and WSe 2
journal, December 2012
- Zhao, Weijie; Ghorannevis, Zohreh; Chu, Leiqiang
- ACS Nano, Vol. 7, Issue 1
Strain-engineered growth of two-dimensional materials
journal, September 2017
- Ahn, Geun Ho; Amani, Matin; Rasool, Haider
- Nature Communications, Vol. 8, Issue 1
Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer
journal, August 2014
- Chernikov, Alexey; Berkelbach, Timothy C.; Hill, Heather M.
- Physical Review Letters, Vol. 113, Issue 7
Measurement of the optical dielectric function of monolayer transition-metal dichalcogenides: , , , and
journal, November 2014
- Li, Yilei; Chernikov, Alexey; Zhang, Xian
- Physical Review B, Vol. 90, Issue 20
Two-dimensional models for the optical response of thin films
journal, March 2018
- Li, Yilei; Heinz, Tony F.
- 2D Materials, Vol. 5, Issue 2
Determination of band offsets, hybridization, and exciton binding in 2D semiconductor heterostructures
journal, February 2017
- Wilson, Neil R.; Nguyen, Paul V.; Seyler, Kyle
- Science Advances, Vol. 3, Issue 2