High temperature Hall-effect investigations of Cd0.85Mn0.10Zn0.05Te crystals
Abstract
High temperature Hall-effect investigations were used to study the change of the concentration and mobility of charge-carriers in Cd0.85Mn0.10Zn0.05Te and Cd0.85Mn0.10Zn0.05Te : In crystals grown by the vertical Bridgman technique. The Cd0.85Mn0.10Zn0.05Te and Cd0.85Mn0.10Zn0.05Te : In samples are characterized by optical and electrical measurements, and by IR-microscopy. We determined that the value of band gap increase with the Mn and Zn amount increasing in the Cd1-x-yMnxZnyTe crystals. We also show that after the high-temperature Hall-effect measurements performed under Cd overpressure the both crystals resistivity increase from 104 Ohm×cm to 106 Ohm×cm, and amount and size of Te inclusions decrease. According to the results of the high temperature Hall-effect investigations the temperatures and Cd vapor pressures intervals were established in which Indium plays major role and controls the concentration of charge carriers.
- Authors:
-
- Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL)
- Publication Date:
- Research Org.:
- Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL)
- Sponsoring Org.:
- USDOE Office of Environmental Management (EM)
- OSTI Identifier:
- 1604908
- Report Number(s):
- SRNL-STI-2019-00486
Journal ID: ISSN 0277-786X; TRN: US2104346
- Grant/Contract Number:
- AC09-08SR22470
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Proceedings of SPIE - The International Society for Optical Engineering
- Additional Journal Information:
- Journal Volume: 111141; Journal ID: ISSN 0277-786X
- Publisher:
- SPIE
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS
Citation Formats
Kopach, Vasylyna, Kopach, Oleh, Kanak, Andriy, Shcherbak, Larysa, Fochuk, Petro, Bolotnikov, Aleksey E., and James, Ralph B. High temperature Hall-effect investigations of Cd0.85Mn0.10Zn0.05Te crystals. United States: N. p., 2019.
Web. doi:10.1117/12.2529066.
Kopach, Vasylyna, Kopach, Oleh, Kanak, Andriy, Shcherbak, Larysa, Fochuk, Petro, Bolotnikov, Aleksey E., & James, Ralph B. High temperature Hall-effect investigations of Cd0.85Mn0.10Zn0.05Te crystals. United States. https://doi.org/10.1117/12.2529066
Kopach, Vasylyna, Kopach, Oleh, Kanak, Andriy, Shcherbak, Larysa, Fochuk, Petro, Bolotnikov, Aleksey E., and James, Ralph B. Mon .
"High temperature Hall-effect investigations of Cd0.85Mn0.10Zn0.05Te crystals". United States. https://doi.org/10.1117/12.2529066. https://www.osti.gov/servlets/purl/1604908.
@article{osti_1604908,
title = {High temperature Hall-effect investigations of Cd0.85Mn0.10Zn0.05Te crystals},
author = {Kopach, Vasylyna and Kopach, Oleh and Kanak, Andriy and Shcherbak, Larysa and Fochuk, Petro and Bolotnikov, Aleksey E. and James, Ralph B.},
abstractNote = {High temperature Hall-effect investigations were used to study the change of the concentration and mobility of charge-carriers in Cd0.85Mn0.10Zn0.05Te and Cd0.85Mn0.10Zn0.05Te : In crystals grown by the vertical Bridgman technique. The Cd0.85Mn0.10Zn0.05Te and Cd0.85Mn0.10Zn0.05Te : In samples are characterized by optical and electrical measurements, and by IR-microscopy. We determined that the value of band gap increase with the Mn and Zn amount increasing in the Cd1-x-yMnxZnyTe crystals. We also show that after the high-temperature Hall-effect measurements performed under Cd overpressure the both crystals resistivity increase from 104 Ohm×cm to 106 Ohm×cm, and amount and size of Te inclusions decrease. According to the results of the high temperature Hall-effect investigations the temperatures and Cd vapor pressures intervals were established in which Indium plays major role and controls the concentration of charge carriers.},
doi = {10.1117/12.2529066},
journal = {Proceedings of SPIE - The International Society for Optical Engineering},
number = ,
volume = 111141,
place = {United States},
year = {Mon Sep 09 00:00:00 EDT 2019},
month = {Mon Sep 09 00:00:00 EDT 2019}
}
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