Measuring the impact ionization and charge trapping probabilities in SuperCDMS HVeV phonon sensing detectors
Abstract
A 0.93 g 1×1×0.4 cm3 SuperCDMS silicon HVeV detector operated at 30 mK was illuminated by 1.91 eV photons using a room temperature pulsed laser coupled to the cryostat via fiber optic. In this work, the detector’s response under a variety of specific operating conditions was used to study the detector leakage current, charge trapping, and impact ionization in the high-purity Si substrate. The measured probabilities for a charge carrier in the detector to undergo charge trapping (0.713±0.093%) or cause impact ionization (1.576±0.110%) were found to be nearly independent of bias polarity and charge-carrier type (electron or hole) for substrate biases of ±140 V.
- Authors:
-
- Stanford Univ., CA (United States). Dept. of Physics
- Univ. of California, Berkeley, CA (United States). Dept. of Physics
- SLAC National Accelerator Lab., Menlo Park, CA (United States)
- SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., CA (United States). Dept. of Physics
- Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
- Santa Clara Univ., Santa Clara, CA (United States)
- Publication Date:
- Research Org.:
- SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States); Fermi National Accelerator Laboratory (FNAL), Batavia, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), High Energy Physics (HEP); National Science Foundation (NSF)
- OSTI Identifier:
- 1604762
- Alternate Identifier(s):
- OSTI ID: 1574976; OSTI ID: 1599668
- Report Number(s):
- arXiv:1910.02162; FERMILAB-PUB-19-556-AE
Journal ID: ISSN 2470-0010; PRVDAQ; TRN: US2104333
- Grant/Contract Number:
- AC02-07CH11359; AC02-76SF00515
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review D
- Additional Journal Information:
- Journal Volume: 101; Journal Issue: 3; Journal ID: ISSN 2470-0010
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
Citation Formats
Ponce, F., Stanford, C., Yellin, S., Page, W., Fink, C., Pyle, M., Sadoulet, B., Serfass, B., Watkins, S. L., Brink, P. L., Cherry, M., Partridge, R., Cabrera, B., Kurinsky, N., and Young, B. A. Measuring the impact ionization and charge trapping probabilities in SuperCDMS HVeV phonon sensing detectors. United States: N. p., 2020.
Web. doi:10.1103/physrevd.101.031101.
Ponce, F., Stanford, C., Yellin, S., Page, W., Fink, C., Pyle, M., Sadoulet, B., Serfass, B., Watkins, S. L., Brink, P. L., Cherry, M., Partridge, R., Cabrera, B., Kurinsky, N., & Young, B. A. Measuring the impact ionization and charge trapping probabilities in SuperCDMS HVeV phonon sensing detectors. United States. https://doi.org/10.1103/physrevd.101.031101
Ponce, F., Stanford, C., Yellin, S., Page, W., Fink, C., Pyle, M., Sadoulet, B., Serfass, B., Watkins, S. L., Brink, P. L., Cherry, M., Partridge, R., Cabrera, B., Kurinsky, N., and Young, B. A. Thu .
"Measuring the impact ionization and charge trapping probabilities in SuperCDMS HVeV phonon sensing detectors". United States. https://doi.org/10.1103/physrevd.101.031101. https://www.osti.gov/servlets/purl/1604762.
@article{osti_1604762,
title = {Measuring the impact ionization and charge trapping probabilities in SuperCDMS HVeV phonon sensing detectors},
author = {Ponce, F. and Stanford, C. and Yellin, S. and Page, W. and Fink, C. and Pyle, M. and Sadoulet, B. and Serfass, B. and Watkins, S. L. and Brink, P. L. and Cherry, M. and Partridge, R. and Cabrera, B. and Kurinsky, N. and Young, B. A.},
abstractNote = {A 0.93 g 1×1×0.4 cm3 SuperCDMS silicon HVeV detector operated at 30 mK was illuminated by 1.91 eV photons using a room temperature pulsed laser coupled to the cryostat via fiber optic. In this work, the detector’s response under a variety of specific operating conditions was used to study the detector leakage current, charge trapping, and impact ionization in the high-purity Si substrate. The measured probabilities for a charge carrier in the detector to undergo charge trapping (0.713±0.093%) or cause impact ionization (1.576±0.110%) were found to be nearly independent of bias polarity and charge-carrier type (electron or hole) for substrate biases of ±140 V.},
doi = {10.1103/physrevd.101.031101},
journal = {Physical Review D},
number = 3,
volume = 101,
place = {United States},
year = {Thu Feb 13 00:00:00 EST 2020},
month = {Thu Feb 13 00:00:00 EST 2020}
}
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