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Title: Correctly Assessing Defect Tolerance in Halide Perovskites

Abstract

The notion of “defect tolerance” has often been invoked to explain the excellent performance of halide perovskites in optoelectronic applications. However, this concept has not been rigorously defined or assessed. A common interpretation is that all of the energetically favorable intrinsic defects are shallow. On the basis of examples in the prototypical halide perovskite CsPbI3, we show that this is not the case. The antisite defects PbI and IPb are energetically favorable, but also have levels deep in the band gap. Still, because of strong anharmonicity, they are not efficient nonradiative recombination centers. Here, our study demonstrates how to correctly evaluate the “defect tolerance” of halide perovskites.

Authors:
ORCiD logo [1];  [1]; ORCiD logo [1]
  1. Univ. of California, Santa Barbara, CA (United States)
Publication Date:
Research Org.:
Univ. of California, Santa Barbara, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1601528
Grant/Contract Number:  
SC0010689; AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Physical Chemistry. C
Additional Journal Information:
Journal Volume: 124; Journal Issue: 11; Journal ID: ISSN 1932-7447
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; Halide perovskites; Defect tolerance; Nonradiative recombination; First-principles calculations; Defects; Energy levels; Recombination; Potential energy; Perovskites

Citation Formats

Zhang, Xie, Turiansky, Mark E., and Van de Walle, Chris G. Correctly Assessing Defect Tolerance in Halide Perovskites. United States: N. p., 2020. Web. doi:10.1021/acs.jpcc.0c01324.
Zhang, Xie, Turiansky, Mark E., & Van de Walle, Chris G. Correctly Assessing Defect Tolerance in Halide Perovskites. United States. https://doi.org/10.1021/acs.jpcc.0c01324
Zhang, Xie, Turiansky, Mark E., and Van de Walle, Chris G. Tue . "Correctly Assessing Defect Tolerance in Halide Perovskites". United States. https://doi.org/10.1021/acs.jpcc.0c01324. https://www.osti.gov/servlets/purl/1601528.
@article{osti_1601528,
title = {Correctly Assessing Defect Tolerance in Halide Perovskites},
author = {Zhang, Xie and Turiansky, Mark E. and Van de Walle, Chris G.},
abstractNote = {The notion of “defect tolerance” has often been invoked to explain the excellent performance of halide perovskites in optoelectronic applications. However, this concept has not been rigorously defined or assessed. A common interpretation is that all of the energetically favorable intrinsic defects are shallow. On the basis of examples in the prototypical halide perovskite CsPbI3, we show that this is not the case. The antisite defects PbI and IPb are energetically favorable, but also have levels deep in the band gap. Still, because of strong anharmonicity, they are not efficient nonradiative recombination centers. Here, our study demonstrates how to correctly evaluate the “defect tolerance” of halide perovskites.},
doi = {10.1021/acs.jpcc.0c01324},
journal = {Journal of Physical Chemistry. C},
number = 11,
volume = 124,
place = {United States},
year = {Tue Feb 25 00:00:00 EST 2020},
month = {Tue Feb 25 00:00:00 EST 2020}
}

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