Highly Plasmonic Titanium Nitride by Room-Temperature Sputtering
Abstract
Titanium nitride (TiN) has recently emerged as an attractive alternative material for plasmonics. However, the typical high-temperature deposition of plasmonic TiN using either sputtering or atomic layer deposition has greatly limited its potential applications and prevented its integration into existing CMOS device architectures. Here, we demonstrate highly plasmonic TiN thin films and nanostructures by a room-temperature, low-power, and bias-free reactive sputtering process. We investigate the optical properties of the TiN films and their dependence on the sputtering conditions and substrate materials. We find that our TiN possesses one of the largest negative values of the real part of the dielectric function as compared to all other plasmonic TiN films reported to date. Two-dimensional periodic arrays of TiN nanodisks are then fabricated, from which we validate that strong plasmonic resonances are supported. Our room-temperature deposition process can allow for fabricating complex plasmonic TiN nanostructures and be integrated into the fabrication of existing CMOS-based photonic devices to enhance their performance and functionalities.
- Authors:
-
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Center for Integrated Nanotechnologies (CINT); National Taiwan Normal Univ., Taipei (Taiwan)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies
- National Chiao Tung Univ., Tainan (Taiwan). Inst. of Photonic System
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Center for Integrated Nanotechnologies (CINT)
- Publication Date:
- Research Org.:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Org.:
- USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division; USDOE National Nuclear Security Administration (NNSA); Ministry of Science and Technology of Taiwan (MOST)
- OSTI Identifier:
- 1597357
- Report Number(s):
- LA-UR-19-29707
Journal ID: ISSN 2045-2322
- Grant/Contract Number:
- 89233218CNA000001; AC52-06NA25396; MOST-106-2221-E-009-122-MY3
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Scientific Reports
- Additional Journal Information:
- Journal Volume: 9; Journal Issue: 1; Journal ID: ISSN 2045-2322
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Energy Sciences; Material Science; Nanophotonics and plasmonics; Optical materials and structures
Citation Formats
Chang, Chun-Chieh, Nogan, John, Yang, Zu-Po, de Melo Kort-Kamp, Wilton Junior, Ross, Willard, Luk, Ting S., Dalvit, Diego Alejandro Roberto, Azad, Abul Kalam, and Chen, Houtong. Highly Plasmonic Titanium Nitride by Room-Temperature Sputtering. United States: N. p., 2019.
Web. doi:10.1038/s41598-019-51236-3.
Chang, Chun-Chieh, Nogan, John, Yang, Zu-Po, de Melo Kort-Kamp, Wilton Junior, Ross, Willard, Luk, Ting S., Dalvit, Diego Alejandro Roberto, Azad, Abul Kalam, & Chen, Houtong. Highly Plasmonic Titanium Nitride by Room-Temperature Sputtering. United States. https://doi.org/10.1038/s41598-019-51236-3
Chang, Chun-Chieh, Nogan, John, Yang, Zu-Po, de Melo Kort-Kamp, Wilton Junior, Ross, Willard, Luk, Ting S., Dalvit, Diego Alejandro Roberto, Azad, Abul Kalam, and Chen, Houtong. Fri .
"Highly Plasmonic Titanium Nitride by Room-Temperature Sputtering". United States. https://doi.org/10.1038/s41598-019-51236-3. https://www.osti.gov/servlets/purl/1597357.
@article{osti_1597357,
title = {Highly Plasmonic Titanium Nitride by Room-Temperature Sputtering},
author = {Chang, Chun-Chieh and Nogan, John and Yang, Zu-Po and de Melo Kort-Kamp, Wilton Junior and Ross, Willard and Luk, Ting S. and Dalvit, Diego Alejandro Roberto and Azad, Abul Kalam and Chen, Houtong},
abstractNote = {Titanium nitride (TiN) has recently emerged as an attractive alternative material for plasmonics. However, the typical high-temperature deposition of plasmonic TiN using either sputtering or atomic layer deposition has greatly limited its potential applications and prevented its integration into existing CMOS device architectures. Here, we demonstrate highly plasmonic TiN thin films and nanostructures by a room-temperature, low-power, and bias-free reactive sputtering process. We investigate the optical properties of the TiN films and their dependence on the sputtering conditions and substrate materials. We find that our TiN possesses one of the largest negative values of the real part of the dielectric function as compared to all other plasmonic TiN films reported to date. Two-dimensional periodic arrays of TiN nanodisks are then fabricated, from which we validate that strong plasmonic resonances are supported. Our room-temperature deposition process can allow for fabricating complex plasmonic TiN nanostructures and be integrated into the fabrication of existing CMOS-based photonic devices to enhance their performance and functionalities.},
doi = {10.1038/s41598-019-51236-3},
journal = {Scientific Reports},
number = 1,
volume = 9,
place = {United States},
year = {Fri Oct 25 00:00:00 EDT 2019},
month = {Fri Oct 25 00:00:00 EDT 2019}
}
Web of Science
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