Band Gaps and Stability of CsSiX3 Halides
Abstract
There is a great current interest in lead-free halide perovskites. While Sn based and Ge based compounds of this type have already been demonstrated experimentally, Si based ones have not. In this paper, the authors consider the possibility of CsSiX3 halide perovskites. While previous work for cubic CsSiI3 found the band gap to close or in fact become inverted and to lead to a topological insulator, the authors show here that in the rhombohedrally distorted structure that occurs because of Si off-centering, the band gap becomes larger than 1.5 eV and possibly of interest for photovoltaics. On the other hand, even in the cubic structure at high temperature, fluctuations of the Si position, will lead to a sizable gap. Here, the total energy calculations, show that the materials are unstable toward 3CsSiI3 → Si2I6 + 3CsI + Si and 2CsSiI3 → SiI4 + 2CsI + Si and are thus above the convex hull. Similar results are presented for halogens: I, Br, Cl.
- Authors:
-
- Case Western Reserve Univ., Cleveland, OH (United States)
- Publication Date:
- Research Org.:
- Case Western Reserve Univ., Cleveland, OH (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1593133
- Alternate Identifier(s):
- OSTI ID: 1495813
- Grant/Contract Number:
- SC0008933
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physica Status Solidi. A, Applications and Materials Science
- Additional Journal Information:
- Journal Volume: 216; Journal Issue: 15; Journal ID: ISSN 1862-6300
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; halide perovskite silicon; band structure; halides; metastability; Si‐based
Citation Formats
Radha, Santosh K., and Lambrecht, Walter R. L. Band Gaps and Stability of CsSiX3 Halides. United States: N. p., 2019.
Web. doi:10.1002/pssa.201800962.
Radha, Santosh K., & Lambrecht, Walter R. L. Band Gaps and Stability of CsSiX3 Halides. United States. https://doi.org/10.1002/pssa.201800962
Radha, Santosh K., and Lambrecht, Walter R. L. Thu .
"Band Gaps and Stability of CsSiX3 Halides". United States. https://doi.org/10.1002/pssa.201800962. https://www.osti.gov/servlets/purl/1593133.
@article{osti_1593133,
title = {Band Gaps and Stability of CsSiX3 Halides},
author = {Radha, Santosh K. and Lambrecht, Walter R. L.},
abstractNote = {There is a great current interest in lead-free halide perovskites. While Sn based and Ge based compounds of this type have already been demonstrated experimentally, Si based ones have not. In this paper, the authors consider the possibility of CsSiX3 halide perovskites. While previous work for cubic CsSiI3 found the band gap to close or in fact become inverted and to lead to a topological insulator, the authors show here that in the rhombohedrally distorted structure that occurs because of Si off-centering, the band gap becomes larger than 1.5 eV and possibly of interest for photovoltaics. On the other hand, even in the cubic structure at high temperature, fluctuations of the Si position, will lead to a sizable gap. Here, the total energy calculations, show that the materials are unstable toward 3CsSiI3 → Si2I6 + 3CsI + Si and 2CsSiI3 → SiI4 + 2CsI + Si and are thus above the convex hull. Similar results are presented for halogens: I, Br, Cl.},
doi = {10.1002/pssa.201800962},
journal = {Physica Status Solidi. A, Applications and Materials Science},
number = 15,
volume = 216,
place = {United States},
year = {Thu Feb 21 00:00:00 EST 2019},
month = {Thu Feb 21 00:00:00 EST 2019}
}
Web of Science
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