Stabilization of point-defect spin qubits by quantum wells
Abstract
Defect-based quantum systems in wide bandgap semiconductors are strong candidates for scalable quantum-information technologies. However, these systems are often complicated by charge-state instabilities and interference by phonons, which can diminish spin-initialization fidelities and limit room-temperature operation. Here, we identify a pathway around these drawbacks by showing that an engineered quantum well can stabilize the charge state of a qubit. Using density-functional theory and experimental synchrotron X-ray diffraction studies, we construct a model for previously unattributed point defect centers in silicon carbide as a near-stacking fault axial divacancy and show how this model explains these defects' robustness against photoionization and room temperature stability. These results provide a materials-based solution to the optical instability of color centers in semiconductors, paving the way for the development of robust single-photon sources and spin qubits.
- Authors:
-
[1];
[2];
[3];
[4];
[5];
[3];
[6];
[2];
[6];
[8]
- Wigner Research Centre for Physics, Budapest (Hungary); Linköping Univ., Linkoping (Sweden)
- Linköping Univ., Linkoping (Sweden)
- Argonne National Lab. (ANL), Lemont, IL (United States)
- Univ. of Chicago, IL (United States); IBM T.J. Watson Research Center, Yorktown Heights, NY (United States)
- Univ. of Chicago, IL (United States)
- Argonne National Lab. (ANL), Lemont, IL (United States); Univ. of Chicago, IL (United States)
- Linköping Univ., Linkoping (Sweden); National Univ. of Science and Technology 'MISIS', Moscow (Russia)
- Wigner Research Centre for Physics, Budapest (Hungary); Budapest Univ. of Technology and Economics, Budapest (Hungary)
- Publication Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- Swedish Research Council (SRC); Knut and Alice Wallenberg Foundation; Russian Federation, Ministry of Education and Science; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Research Development and Innovation Office of Hungary (NKFIH)
- OSTI Identifier:
- 1592407
- Grant/Contract Number:
- AC02-06CH11357
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nature Communications
- Additional Journal Information:
- Journal Volume: 10; Journal Issue: 1; Journal ID: ISSN 2041-1723
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Citation Formats
Ivády, Viktor, Davidsson, Joel, Delegan, Nazar, Falk, Abram L., Klimov, Paul V., Whiteley, Samuel J., Hruszkewycz, Stephan O., Holt, Martin V., Heremans, F. Joseph, Son, Nguyen Tien, Awschalom, David D., Abrikosov, Igor A., and Gali, Adam. Stabilization of point-defect spin qubits by quantum wells. United States: N. p., 2019.
Web. doi:10.1038/s41467-019-13495-6.
Ivády, Viktor, Davidsson, Joel, Delegan, Nazar, Falk, Abram L., Klimov, Paul V., Whiteley, Samuel J., Hruszkewycz, Stephan O., Holt, Martin V., Heremans, F. Joseph, Son, Nguyen Tien, Awschalom, David D., Abrikosov, Igor A., & Gali, Adam. Stabilization of point-defect spin qubits by quantum wells. United States. https://doi.org/10.1038/s41467-019-13495-6
Ivády, Viktor, Davidsson, Joel, Delegan, Nazar, Falk, Abram L., Klimov, Paul V., Whiteley, Samuel J., Hruszkewycz, Stephan O., Holt, Martin V., Heremans, F. Joseph, Son, Nguyen Tien, Awschalom, David D., Abrikosov, Igor A., and Gali, Adam. Fri .
"Stabilization of point-defect spin qubits by quantum wells". United States. https://doi.org/10.1038/s41467-019-13495-6. https://www.osti.gov/servlets/purl/1592407.
@article{osti_1592407,
title = {Stabilization of point-defect spin qubits by quantum wells},
author = {Ivády, Viktor and Davidsson, Joel and Delegan, Nazar and Falk, Abram L. and Klimov, Paul V. and Whiteley, Samuel J. and Hruszkewycz, Stephan O. and Holt, Martin V. and Heremans, F. Joseph and Son, Nguyen Tien and Awschalom, David D. and Abrikosov, Igor A. and Gali, Adam},
abstractNote = {Defect-based quantum systems in wide bandgap semiconductors are strong candidates for scalable quantum-information technologies. However, these systems are often complicated by charge-state instabilities and interference by phonons, which can diminish spin-initialization fidelities and limit room-temperature operation. Here, we identify a pathway around these drawbacks by showing that an engineered quantum well can stabilize the charge state of a qubit. Using density-functional theory and experimental synchrotron X-ray diffraction studies, we construct a model for previously unattributed point defect centers in silicon carbide as a near-stacking fault axial divacancy and show how this model explains these defects' robustness against photoionization and room temperature stability. These results provide a materials-based solution to the optical instability of color centers in semiconductors, paving the way for the development of robust single-photon sources and spin qubits.},
doi = {10.1038/s41467-019-13495-6},
journal = {Nature Communications},
number = 1,
volume = 10,
place = {United States},
year = {Fri Dec 06 00:00:00 EST 2019},
month = {Fri Dec 06 00:00:00 EST 2019}
}
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