In situ dynamic transmission electron microscopy characterization of liquid-mediated crystallization of amorphous Ge
Abstract
Crystal growth rates during laser-induced, liquid-mediated crystallization of amorphous Ge were measured with movie-mode dynamic transmission electron microscopy (MM-DTEM), a photoemission microscopy technique with nanosecond-scale time resolution. Films of 50-nm thick amorphous Ge were crystallized using a 12-ns laser pulse with a Gaussian spatial profile, which established high local temperature gradients in the specimen. Crystallization proceeded by the formation of a central zone with a high nucleation rate (zone I), followed by liquid-mediated outward growth of columnar grains (zone II), followed by spiraling growth (zone III) until the crystallization halted in cooler parts of the specimen. Zone II growth was imaged for several laser pulse energies with 20-ns electron pulses with 95 ns between frames. A thin liquid layer between the solid amorphous phase and the advancing crystallization front during zone II growth was imaged. The zone II growth rate for each experiment remained nearly constant although the crystallization front passes through a large temperature gradient. Measured growth rates ranged from 5.7 to 13.6 m/s, consistent with transient liquid layer mediated growth rather than solid-state growth. In contrast with a previous report, the growth rate did not increase systematically with laser energy or absorbed energy. The new results, together with previously reportedmore »
- Authors:
-
- Materials Science Division, Lawrence Livermore National Laboratory, Livermore, California 94551, USA
- Department of Mechanical, Industrial, and Manufacturing Engineering, Oregon State University, Corvallis, Oregon 97331, USA
- IBM/Macronix PCRAM Joint Project, Macronix Emerging Central Laboratory, Macronix International Co., Hsinchu, Taiwan
- Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, D-14109 Berlin, Germany
- Publication Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
- OSTI Identifier:
- 1581487
- Alternate Identifier(s):
- OSTI ID: 1561339
- Report Number(s):
- LLNL-JRNL-764056
Journal ID: ISSN 0021-8979; JAPIAU; 954020; TRN: US2100760
- Grant/Contract Number:
- AC52-07NA27344; FWP SCW0974
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 126; Journal Issue: 10; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Egan, G., Rahn, T. T., Rise, A. J., Cheng, H. -Y., Raoux, S., Campbell, G. H., and Santala, M. K. In situ dynamic transmission electron microscopy characterization of liquid-mediated crystallization of amorphous Ge. United States: N. p., 2019.
Web. doi:10.1063/1.5117845.
Egan, G., Rahn, T. T., Rise, A. J., Cheng, H. -Y., Raoux, S., Campbell, G. H., & Santala, M. K. In situ dynamic transmission electron microscopy characterization of liquid-mediated crystallization of amorphous Ge. United States. https://doi.org/10.1063/1.5117845
Egan, G., Rahn, T. T., Rise, A. J., Cheng, H. -Y., Raoux, S., Campbell, G. H., and Santala, M. K. Wed .
"In situ dynamic transmission electron microscopy characterization of liquid-mediated crystallization of amorphous Ge". United States. https://doi.org/10.1063/1.5117845. https://www.osti.gov/servlets/purl/1581487.
@article{osti_1581487,
title = {In situ dynamic transmission electron microscopy characterization of liquid-mediated crystallization of amorphous Ge},
author = {Egan, G. and Rahn, T. T. and Rise, A. J. and Cheng, H. -Y. and Raoux, S. and Campbell, G. H. and Santala, M. K.},
abstractNote = {Crystal growth rates during laser-induced, liquid-mediated crystallization of amorphous Ge were measured with movie-mode dynamic transmission electron microscopy (MM-DTEM), a photoemission microscopy technique with nanosecond-scale time resolution. Films of 50-nm thick amorphous Ge were crystallized using a 12-ns laser pulse with a Gaussian spatial profile, which established high local temperature gradients in the specimen. Crystallization proceeded by the formation of a central zone with a high nucleation rate (zone I), followed by liquid-mediated outward growth of columnar grains (zone II), followed by spiraling growth (zone III) until the crystallization halted in cooler parts of the specimen. Zone II growth was imaged for several laser pulse energies with 20-ns electron pulses with 95 ns between frames. A thin liquid layer between the solid amorphous phase and the advancing crystallization front during zone II growth was imaged. The zone II growth rate for each experiment remained nearly constant although the crystallization front passes through a large temperature gradient. Measured growth rates ranged from 5.7 to 13.6 m/s, consistent with transient liquid layer mediated growth rather than solid-state growth. In contrast with a previous report, the growth rate did not increase systematically with laser energy or absorbed energy. The new results, together with previously reported data, suggest that both sets of experiments were conducted under conditions where the growth rate saturates near its maximum value. A phenomenological model based on the concept of upper and lower threshold temperatures for the zone II growth was fitted to the data from these experiments and previous MM-DTEM crystallization experiments.},
doi = {10.1063/1.5117845},
journal = {Journal of Applied Physics},
number = 10,
volume = 126,
place = {United States},
year = {Wed Sep 11 00:00:00 EDT 2019},
month = {Wed Sep 11 00:00:00 EDT 2019}
}
Web of Science
Works referenced in this record:
Complex crystallization dynamics in amorphous germanium observed with dynamic transmission electron microscopy
journal, February 2013
- Nikolova, Liliya; LaGrange, Thomas; Stern, Mark J.
- Physical Review B, Vol. 87, Issue 6
Progress in Laser-Crystallized Thin-Film Polycrystalline Silicon Solar Cells: Intermediate Layers, Light Trapping, and Metallization
journal, January 2014
- Dore, Jonathon; Ong, Daniel; Varlamov, Sergey
- IEEE Journal of Photovoltaics, Vol. 4, Issue 1
Atomistic computer simulation of explosive crystallization in pure silicon and germanium
journal, September 2004
- Albenze, Erik J.; Thompson, Michael O.; Clancy, Paulette
- Physical Review B, Vol. 70, Issue 9
Nanocrystallization of amorphous germanium films observed with nanosecond temporal resolution
journal, November 2010
- Nikolova, L.; LaGrange, T.; Reed, B. W.
- Applied Physics Letters, Vol. 97, Issue 20
In situ dynamic TEM characterization of unsteady crystallization during laser processing of amorphous germanium
journal, January 2018
- Egan, Garth C.; Li, Tian T.; Roehling, John D.
- Acta Materialia, Vol. 143
Explosive crystallization of amorphous germanium
journal, February 1981
- Leamy, H. J.; Brown, W. L.; Celler, G. K.
- Applied Physics Letters, Vol. 38, Issue 3
LII. On the properties of electro-deposited antimony
journal, December 1858
- Gore, G.
- The London, Edinburgh, and Dublin Philosophical Magazine and Journal of Science, Vol. 16, Issue 109
Kinetics of liquid-mediated crystallization of amorphous Ge from multi-frame dynamic transmission electron microscopy
journal, December 2015
- Santala, M. K.; Raoux, S.; Campbell, G. H.
- Applied Physics Letters, Vol. 107, Issue 25
Phenomenology of the “explosive” crystallization of sputtered non-crystalline germanium films
journal, December 1973
- Takamori, Takeshi; Messier, Russell; Roy, Rustum
- Journal of Materials Science, Vol. 8, Issue 12
Melting Temperature and Explosive Crystallization of Amorphous Silicon during Pulsed Laser Irradiation
journal, June 1984
- Thompson, Michael O.; Galvin, G. J.; Mayer, J. W.
- Physical Review Letters, Vol. 52, Issue 26
On a peculiar phænomenon in the electro-deposition of antimony
journal, January 1855
- Gore, G.
- The London, Edinburgh, and Dublin Philosophical Magazine and Journal of Science, Vol. 9, Issue 56
Mesoscale computational study of the nanocrystallization of amorphous Ge via a self-consistent atomistic phase-field model
journal, September 2014
- Reina, C.; Sandoval, L.; Marian, J.
- Acta Materialia, Vol. 77
Effect of medium range order on pulsed laser crystallization of amorphous germanium thin films
journal, May 2016
- Li, T. T.; Bayu Aji, L. B.; Heo, T. W.
- Applied Physics Letters, Vol. 108, Issue 22
Approaches for ultrafast imaging of transient materials processes in the transmission electron microscope
journal, November 2012
- LaGrange, Thomas; Reed, Bryan W.; Santala, Melissa K.
- Micron, Vol. 43, Issue 11, p. 1108-1120
Kinetics of motion of crystal-melt interfaces
conference, January 1979
- Spaepen, F.; Turnbull, D.
- AIP Conference Proceedings Vol. 50
Kinetics of Laser-Induced Crystallization of Amorphous Germanium Films
journal, September 1985
- Bostanjoglo, O.; Endruschat, E.
- physica status solidi (a), Vol. 91, Issue 1
Micro-structural defects in polycrystalline silicon thin-film solar cells on glass by solid-phase crystallisation and laser-induced liquid-phase crystallisation
journal, January 2015
- Huang, Jialiang; Varlamov, Sergey; Dore, Jonathon
- Solar Energy Materials and Solar Cells, Vol. 132
Movie-mode dynamic electron microscopy
journal, January 2015
- LaGrange, Thomas; Reed, Bryan W.; Masiel, Daniel J.
- MRS Bulletin, Vol. 40, Issue 1
On the explosive semiconductor-semimetal transition of antimony
journal, September 1975
- Aymerich, F. M.; Delunas, A.
- Physica Status Solidi (a), Vol. 31, Issue 1
Direct characterization of phase transformations and morphologies in moving reaction zones in Al/Ni nanolaminates using dynamic transmission electron microscopy
journal, May 2011
- Kim, J. S.; LaGrange, T.; Reed, B. W.
- Acta Materialia, Vol. 59, Issue 9
Crystallization in amorphous germanium
journal, November 1979
- Germain, P.; Zellama, K.; Squelard, S.
- Journal of Applied Physics, Vol. 50, Issue 11
Time resolved electron microscopy for in situ experiments
journal, December 2014
- Campbell, Geoffrey H.; McKeown, Joseph T.; Santala, Melissa K.
- Applied Physics Reviews, Vol. 1, Issue 4
A calculation of the thermodynamic first order amorphous semiconductor to metallic liquid transition temperature
conference, January 1979
- Bagley, B. G.; Chen, H. S.
- AIP Conference Proceedings Vol. 50
Time-Resolved TEM of Transient Effects in Pulse Annealing of Ge and Ge–Te Films
journal, September 1982
- Bostanjoglo, O.; Hoffmann, G.
- physica status solidi (a), Vol. 73, Issue 1
In situ investigation of explosive crystallization in a-Ge: Experimental determination of the interface response function using dynamic transmission electron microscopy
journal, September 2014
- Nikolova, Liliya; Stern, Mark J.; MacLeod, Jennifer M.
- Journal of Applied Physics, Vol. 116, Issue 9
Impulse stimulated crystallization of Sb films investigated by time resolved TEM
journal, December 1981
- Bostanjoglo, O.; Schlotzhauer, G.
- Physica Status Solidi (a), Vol. 68, Issue 2
Electron beam induced explosive crystallization of unsupported amorphous germanium thin films
journal, January 1984
- Sharma, R. K.; Bansal, S. K.; Nath, R.
- Journal of Applied Physics, Vol. 55, Issue 2
Solid‐phase growth of large aligned grains during scanned laser crystallization of amorphous Ge films on fused silica
journal, January 1980
- Fan, John C. C.; Zeiger, H. J.; Gale, Ronald P.
- Applied Physics Letters, Vol. 36, Issue 2
Crystallization‐front velocity during scanned laser crystallization of amorphous Ge films
journal, August 1980
- Chapman, Ralph L.; Fan, John C. C.; Zeiger, Herbert J.
- Applied Physics Letters, Vol. 37, Issue 3
Irreversible reactions studied with nanosecond transmission electron microscopy movies: Laser crystallization of phase change materials
journal, April 2013
- Santala, M. K.; Reed, B. W.; Raoux, S.
- Applied Physics Letters, Vol. 102, Issue 17
Time-resolved TEM of pulsed crystallization of amorphous Si and Ge films
journal, April 1982
- Bostanjoglo, O.
- physica status solidi (a), Vol. 70, Issue 2
Laser-induced nucleation of crystals in amorphous Ge films
journal, January 1992
- Bostanjoglo, O.; Marine, W.; Thomsen-Schmidt, P.
- Applied Surface Science, Vol. 54
Time-Resolved In Situ Measurements During Rapid Alloy Solidification: Experimental Insight for Additive Manufacturing
journal, January 2016
- McKeown, Joseph T.; Zweiacker, Kai; Liu, Can
- JOM, Vol. 68, Issue 3
New Noncrystalline Germanium which Crystallizes ``Explosively'' at Room Temperature
journal, March 1972
- Takamori, Takeshi; Messier, Russell; Roy, Rustum
- Applied Physics Letters, Vol. 20, Issue 5
Crystallization kinetics of the phase change material GeSb 6 Te measured with dynamic transmission electron microscopy
journal, January 2016
- Winseck, M. M.; Cheng, H. -Y.; Campbell, G. H.
- Dalton Transactions, Vol. 45, Issue 24
Explosive crystallization in the presence of melting
journal, May 2006
- Grigoropoulos, C.; Rogers, M.; Ko, S. H.
- Physical Review B, Vol. 73, Issue 18
Crystallization Kinetics of the Phase Change Material GeSb 6 Te Measured with Dynamic Transmission Electron Microscopy
journal, July 2016
- Winseck, M. M.; Cheng, H. -Y.; Campbell, G. H.
- Microscopy and Microanalysis, Vol. 22, Issue S3
Phenomenology of the “explosive” crystallization of sputtered non-crystalline germanium films
journal, December 1973
- Takamori, Takeshi; Messier, Russell; Roy, Rustum
- Journal of Materials Science, Vol. 8, Issue 12
Mesoscale computational study of the nano-crystallization of amorphous Ge via a self-consistent atomistic - phase field coupling
text, January 2013
- Reina, Celia; Sandoval, Luis; Marian, Jaime
- arXiv