EUV Lithography

Naulleau, Patrick

doi:10.1080/08940886.2019.1634429

Title: EUV Lithography

Abstract

The year 2019 will mark the entry of extreme ultraviolet lithography (EUVL) into high-volume production of advanced semiconductor chips after 35 years of development. Although synchrotron sources are not being used for the commercial deployment of EUVL, synchrotron facilities have played and continue to play a vital role in the development and commercialization of EUVL. Modern EUVL, previously referred to as soft-X-ray projection lithography, was first demonstrated by H. Kinoshita of NTT in 1986 using synchrotron radiation and achieving 4 μm resolution. Parallel development efforts were also in place at AT&T, which in 1990 demonstrated patterning down to 50 nm, again using synchrotron radiation. Spurred by these promising results, worldwide research and development in EUVL greatly accelerated, and today we have commercial tools powered by 250 W laser-produced plasma sources capable of pattering 145 300-mm wafers per hour at resolutions supporting the 7 nm node. Despite EUVL entering high-volume production this year with 0.33 numerical aperture tools, many challenges remain to ensure the long-term extension of the technology to even higher resolution with numerical apertures of 0.55 and possibly wavelengths shorter than 13.5 nm. Synchrotron facilities will continue to play an essential research and development role as the community seeksmore »« less

Authors:

Naulleau, Patrick ^[1]

Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Center for X-ray Optics

Publication Date:: Mon Aug 12 00:00:00 EDT 2019

Research Org.:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Sponsoring Org.:: USDOE Office of Science (SC)

OSTI Identifier:: 1581072

Grant/Contract Number:: AC02-05CH11231

Resource Type:: Accepted Manuscript

Journal Name:: Synchrotron Radiation News

Additional Journal Information:: Journal Volume: 32; Journal Issue: 4; Journal ID: ISSN 0894-0886

Publisher:: Taylor & Francis

Country of Publication:: United States

Language:: English

Subject:: 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY

Citation Formats


                    Naulleau, Patrick. EUV Lithography.  United States: N. p., 2019. 
Web.  doi:10.1080/08940886.2019.1634429.

Copy to clipboard


                    Naulleau, Patrick. EUV Lithography.  United States.  https://doi.org/10.1080/08940886.2019.1634429

Copy to clipboard


                    Naulleau, Patrick. Mon .  
"EUV Lithography".  United States.  https://doi.org/10.1080/08940886.2019.1634429.  https://www.osti.gov/servlets/purl/1581072.

Copy to clipboard


                    
@article{osti_1581072,

  title        = {EUV Lithography},

  author       = {Naulleau, Patrick},

  abstractNote = {The year 2019 will mark the entry of extreme ultraviolet lithography (EUVL) into high-volume production of advanced semiconductor chips after 35 years of development. Although synchrotron sources are not being used for the commercial deployment of EUVL, synchrotron facilities have played and continue to play a vital role in the development and commercialization of EUVL. Modern EUVL, previously referred to as soft-X-ray projection lithography, was first demonstrated by H. Kinoshita of NTT in 1986 using synchrotron radiation and achieving 4 μm resolution. Parallel development efforts were also in place at AT&T, which in 1990 demonstrated patterning down to 50 nm, again using synchrotron radiation. Spurred by these promising results, worldwide research and development in EUVL greatly accelerated, and today we have commercial tools powered by 250 W laser-produced plasma sources capable of pattering 145 300-mm wafers per hour at resolutions supporting the 7 nm node. Despite EUVL entering high-volume production this year with 0.33 numerical aperture tools, many challenges remain to ensure the long-term extension of the technology to even higher resolution with numerical apertures of 0.55 and possibly wavelengths shorter than 13.5 nm. Synchrotron facilities will continue to play an essential research and development role as the community seeks to address these challenges. In this special issue, we provide highlights from three synchrotron facilities currently most active in EUVL research: the Advanced Light Source at Lawrence Berkeley National Laboratory, NewSUBARU at the University of Hyogo, and the Swiss Light Source at the Paul Scherrer Institut. Certainly, there are many other crucial development efforts in place around the world, but in this special issue we specifically focus on synchrotron facility efforts. A broad description of the technology and the global efforts can be conveniently found in a variety of textbooks and EUVL conference proceedings.},

  doi          = {10.1080/08940886.2019.1634429},

  journal      = {Synchrotron Radiation News},

  number       = 4,

  volume       = 32,

  place        = {United States},

  year         = {Mon Aug 12 00:00:00 EDT 2019},

  month        = {Mon Aug 12 00:00:00 EDT 2019}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (DOE)

Publisher's Version of Record

https://doi.org/10.1080/08940886.2019.1634429

Other availability

Search WorldCat to find libraries that may hold this journal

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

Reduction imaging at 14 nm using multilayer-coated optics: Printing of features smaller than 0.1 μm
journal, November 1990

Bjorkholm, J. E.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 8, Issue 6
DOI: 10.1116/1.585106

Similar Records in DOE PAGES and OSTI.GOV collections:

Evaluating EUV mask pattern imaging with two EUV microscopes

Conference Goldberg, Kenneth A ; Takase, Kei ; Naulleau, Patrick P ; ...

Aerial image measurement plays a key role in the development of patterned reticles for each generation of lithography. Studying the field transmitted (reflected) from EUV masks provides detailed information about potential disruptions caused by mask defects, and the performance of defect repair strategies, without the complications of photoresist imaging. Furthermore, by measuring the continuously varying intensity distribution instead of a thresholded, binary resist image, aerial image measurement can be used as feedback to improve mask and lithography system modeling methods. Interest in EUV, at-wavelength, aerial image measurement lead to the creation of several research tools worldwide. These tools are usedmore »« less
Full Text Available
Preparing for the Next Generation of EUV Lithography at the Center for X-ray Optics

Journal Article Miyakawa, Ryan ; Naulleau, Patrick - Synchrotron Radiation News

The introduction of EUV lithography into high-volume semiconductor manufacturing this year represents a monumental milestone for EUV technology. After nearly 30 years of development, the EUV research community has overcome many of the key obstacles required to enable the long-awaited integration of EUV lithography into the lab. These obstacles have included: the development of a stable, high-powered EUV source to ensure adequate exposure tool reliability; controlling EUV mask defects and mask contamination; and the development of EUV resists with adequate sensitivity, resolution, and line width roughness to meet the tolerances required for high-volume manufacturing. As EUV moves into its secondmore »« less
https://doi.org/10.1080/08940886.2019.1634432

Full Text Available
Advanced 0.3-NA EUV lithography capabilities at the ALS

Conference Naulleau, Patrick ; Anderson, Erik ; Dean, Kim ; ...

For volume nanoelectronics production using Extreme ultraviolet (EUV) lithography [1] to become a reality around the year 2011, advanced EUV research tools are required today. Microfield exposure tools have played a vital role in the early development of EUV lithography [2-4] concentrating on numerical apertures (NA) of 0.2 and smaller. Expected to enter production at the 32-nm node with NAs of 0.25, EUV can no longer rely on these early research tools to provide relevant learning. To overcome this problem, a new generation of microfield exposure tools, operating at an NA of 0.3 have been developed [5-8]. Like their predecessors,more »« less
Full Text Available
Microfield exposure tool enables advances in EUV lithography development

Journal Article Naulleau, Patrick - SPIE online technical magazine

With demonstrated resist resolution of 20 nm half pitch, the SEMATECH Berkeley BUV microfield exposure tool continues to push crucial advances in the areas of BUY resists and masks. The ever progressing shrink in computer chip feature sizes has been fueled over the years by a continual reduction in the wavelength of light used to pattern the chips. Recently, this trend has been threatened by unavailability of lens materials suitable for wavelengths shorter than 193 nm. To circumvent this roadblock, a reflective technology utilizing a significantly shorter extreme ultraviolet (EUV) wavelength (13.5 nm) has been under development for the pastmore »« less
Full Text Available
Demonstration of 22-nm half pitch resolution on the SHARP EUV microscope

Journal Article Benk, Markus P. ; Goldberg, Kenneth A. ; Wojdyla, Antoine ; ... - Journal of Vacuum Science and Technology B

The Semiconductor High-Numerical-aperture (NA) Actinic Reticle Review Project (SHARP) is an extreme ultraviolet (EUV)-wavelength, synchrotron-based microscope dedicated to advanced EUV photomask research. The instrument is designed to emulate current and future generations of EUV lithography (EUVL). The performance of the SHARP microscope has been well characterized for its low-NA lenses, emulating imaging in 0.25 and 0.33NA lithography scanners. Evaluating the resolution of its higher-NA lenses, intended to emulate future generations of EUV lithography, requires a photomask with features down to 22-nm half pitch. The authors fabricated a sample with features down to 20-nm half pitch, exposing a wafer with amore »« less
Cited by 12
https://doi.org/10.1116/1.4929509

Full Text Available

Similar Records

Title: EUV Lithography

Abstract

Citation Formats

Reduction imaging at 14 nm using multilayer-coated optics: Printing of features smaller than 0.1 μm journal, November 1990

Reduction imaging at 14 nm using multilayer-coated optics: Printing of features smaller than 0.1 μm
journal, November 1990